• Korean Journal of Materials Research
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• v.11 no.4
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• pp.290-293
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• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.690-695
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• 1996

We have systematically investigated the characterization of V$_{2}$O$_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The V$_{2}$O$_{5}$ thin films were prepared by thermal vacuum evaporation with varing the substrate temperature and film thickness. In electrochromic devices for smart windows, the WO$_{3}$ thin films with 400-800 nm thickness require to be capable of reversibly injection 10-15 mC/cm$^{2}$ of lithium, which is readily accomplished charge-balanced switching in a V$_{2}$O$_{5}$ thin films with 100-150nm thick. The V$_{2}$O$_{5}$ thin films produces considerably small changes in optical modulation properties in the visible and near infrared region(500-1100 nm) compared to the amorphous WO$_{3}$ thin films on 10-15 mC/cm$^{2}$ of lithium injection and the V$_{2}$O$_{5}$ thin films can therefore act as a counter electrode to WO$_{3}$ in a lithium based complementary clectrochromic devices. After 10$^{5}$ coloration/bleaching switching time, the degradation does not occurs and the devices exhibit a stable optical modulation in V$_{2}$O$_{5}$ thin films. It has shown that the injected lithium ion amounts in crystalline V$_{2}$O$_{5}$ thin films with the same thickness is large by 3-5 mC/cm$^{2}$ of lithium compared to the amorphous thin films in the same driving conditions. Therefore, to optimize the device performance, it is necessary to choose an appropriate film thickness and crystallinity of V$_{2}$O$_{5}$ for amorphous WO$_{3}$ film thickness as a working electrode.

• The KIPS Transactions:PartC
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• v.18C no.4
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• pp.207-212
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• 2011

Vehicular Ad Hoc Network(VANET) is a communication technology between vehicles and vehicles(V2V) or vehicles and infrastructures(V2I) for offering a number of practical applications. Considering the importance of communicated information through VANET, data authentication, confidentiality and integrity are fundamental security elements. Recently, to enhance a security of VANET in various circumstances, message authentication is widely researched by many laboratories. Among of them, Zhang. et. al. is an efficient method to authenticate the message with condition of anonymity in dense space. In the scheme, to obtain the vehicular ID with condition of anonymity, the k-anonymity is used. However it has a disadvantage, which conducts hash operations in case of determining the vehicular ID. In the paper, we present a location based algorithm using received signal strength for the location based authentication and encryption technique as well, and to enhance the accuracy of algorithm we apply a location determination technique over the 3-dimensional space.

• Korean Journal of Agricultural Science
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• v.27 no.1
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• pp.39-47
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• 2000

A large scale field test of prefabricated vertical drains is performed to analyze the effect of parameters of the very soft clay at a test site. Compression index and the coefficient of horizontal consolidation obtained by back-analysis from the settlement data were compared with those obtained by means of laboratory tests. The Hyperbolic, Asaoka's and The Curve fitting methods are used to estimate final settlements and coefficients of consolidation. 1. Final settlement predicted with the Hyperbolic method was the largest, and the settlements predicted with the Asaoka's and the Curve fitting methods were nearly the same range, and it was concluded that smear effect has to be considered on design in the case that spacing of drains is small 2. The relationships of the measured consolidation ratio (Urn) and the designed consolidation ratio($U_t$) were showed as $U_m$ = (1.13~1.17)$U_t$, $U_m$ = (1.07~1.20)$U_t$, $U_m$ = (1.13~1.17)$U_t$ on the Hyperbolic, Asaoka's and the Curve fitting methods, respectively. The relations on the Asaoka's and the Curve fitting methods were nearly the same range. 3. The relationships of the field compression index($C_{cfield}$) and virgin compression index($V_{cclab}$) were showed as $C_{cfield}$ = (1.26~1.45)$V_{cclab}$, $C_{cfield}$ = (1.08~1.15) $V_{cclab}$, $C_{cfield}$ = (1.04~1.21)$V_{cclab}$, on the Hyperbolic, Asaoka's and the Curve fitting methods, respectively. 4. The ratio ($C_h/C_v$) of the coefficient of vertical consolidation and the coefficient of horizontal consolidation that is obtained by back-analysis from the settlement data was $C_h$=(0.7~0.9)$C_v$, $C_h$=(0.9~1.5)$C_v$, $C_h$=(2.4~3.0)$C_v$ on the Hyperbolic, Asaoka's and the Curve fitting methods, respectively. 5. It was concluded that the exact consolidation coefficient must be determined after the final settlement is predicted again when the consolidation is finished, because the field consolidation coefficient is decreased as the time allowed to be alone is increased.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.572-582
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• 1996

The porous silicon was prepared in the condition of 70mA/cm2 and 5.10 sec and then oxidized at 800~110$0^{\circ}C$ MOS(Metal Oxide Semiconductor) structure was prepared by Al electrode deposition and analyzed by C-V (Capacitance-Voltage) characteristics. Dielectric constant of oxidized porous silicon was large in the case of low temperature (800, 90$0^{\circ}C$) and short time(20-30min) oxidation and was nearly the same as thermal SiO2 3.9 in the case of high temperature (110$0^{\circ}C$) and long time (above 60 min) It is though to be caused byunoxidized silicon in oxidized porous silicon film and capacitance increase due to surface area increment effect.

• Journal of the Korean Geotechnical Society
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• v.17 no.2
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• pp.5-12
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• 2001

고유기질토의 정규압밀과 과입밀에 대한 압밀특성을 연구하기 위하여 전북지역에서 채취한 2종류의 고유기질토 IS와 YJ를 사용하여 일련의 실내 표준압밀시험과 반복압밀시험을 수행하였다. 전북지역 대표적인 고유기질토의 물리적 특성은 유기물함량이 각각 58%와 72%, 자연함수비 487%와 635%, 초기공극비 7.02와 9.72이었다. 표준압밀시험결과 K, $M_{v}$ , $C_{v}$ 는 압밀하중이 증가함에 따라서 선행하중을 경계로 일반 점토보다 크게 감소하는 특성을 보였다. 또한 2단계, 3단계 반복압밀 시험결과 K, $M_{v}$ 는 압밀하중이 증가함에 따라서 완만하게 감소하였으며 표준압밀시험결과보다는 작게 나타났다. 2단계 반복압밀의 경우 $C_{v}$ 는 정규압밀영역에서 표준압밀시험결과보다 약 10-12배정도 크게 나타났다. $C_{c}$ , $C_{a}$ 는 압밀하중이 증가함에 따라서 각각 선행하중의 약 2.5배, 3배 하중을 정점으로 크게 증감하는 고유기질토 고유의 특성을 나타냈다. 고유기질토의 $C_{c}$ , $C_{a}$ 는 일반 점토보다 압밀압력 의존성이 큰 특성을 나타냈으며 최대값도 각각 2.9-3.8, 0.3-0.4로 일반 점토보다 큰 값을 보였다. 2단계, 3단계 반복압밀시험결과 $C_{c}$ , $C_{a}$ 는 압밀하중이 증가함에 따라서 약간 증가하였다. $C_{a}$ 는 OCR이 증가함에 따라서 감소하였으며 특히 OCR이 1-2 범위에서 감소폭이 크게 나타났다. 고유길토의 제압밀계수는 반복회수 및 하중의 크기 등에 따라서 큰 영향을 받으며 또한 과압밀 크기의 대소는 고유기질토의 $C_{a}$ 에 큰 영향을 미치는 것으로 생각되어 이 분야에 대한 더 많은 연구가 필요하다.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.65-69
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• 2003

Microstructural and electromagnetic properties of YIG ferrites, (Y, Ca)-(Fe, V, In, Al)-O for Isolator/Circulator were investigated with the sintering temperature. YIG ferrites of $Y_{2.1}Ca_{0.9}Fe_{4.4}V_{0.5}In_{0.05}Al_{0.05}O_{12}$ were fabricated by sintering at $1300^{\circ}C$, $1330^{\circ}C$, $1350^{\circ}C$, $1370^{\circ}C$. Crystallographic and microstructural properties were measured using XRD and SEM. Saturation magnetization$(4{\pi}M_s)$ were measured using VSM, and FMR(Ferromagnetic Resonance) experiment was conducted to measure ferromagnetic resonance line width$({\Delta}H)$. Microwave characteristics of YIG ferrites were measured using a Network Analyzer. The YIG ferrite of $Y_{2.1}Ca_{0.9}Fe_{4.4}V_{0.5}In_{0.05}Al_{0.05}O_{12}$, sintered at $1350^{\circ}C$, showed higher density, saturation magnetization and lower ferromagnetic resonance line width than those sintered at any other temperature.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.359-364
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• 1996

$SrTiO_3$ thin films were deposited on Pt/Ti/$SiO_2$/Si substrates at low temperatures below $300^{\circ}C$ by r.f. magnetron sputtering. The materials and the electrical properties of the deposited films were investigated with controlling deposition parameters such as substrate temperature(T_s) and positive substrate d.c. bias voltage. Stoichiometric $SrTiO_3$ films were obtained at Ts of $300^{\circ}C$, but Sr content in the film was less than that of a target when Ts was lower than $300^{\circ}C$, resulting in poor electrical properties. By introducing a positive substrate d.c. bias during deposition, the crystallinity and the dielectric properties of the films were markedly improved. 400 nm thick $SrTiO_3$, films deposited at $300^{\circ}C$ with a positive substrate d.c. bias of 20V showed a columnar structure with <211> crystallographic direction and a dielectric constant of 98.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.760-769
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• 2000

Mechanical properties of HSLA cast steels alloyed with 0.15% Nb, Ti or V were tested as variations of austenizing temperatures and tempering times. The test results are as follows. The hardness of HSLA cast steels austenized for 2hrs at 115$0^{\circ}C$ was shown the highest value regardless of alloying elements and then decreased as the temperature decreased below 110$0^{\circ}C$. The hardness of HSLA cast steels with 0.15% Ti austenized for 2 hrs at $1150^{\circ}C$ was higher than that of any other HSLA cast steels, and chich was mainly attributed to the relatively high amount of bainite, and solid solution hardening. Charpy impact energy of HSLA cast steels was comparable to the C-Mn cast steel except HSLA cast steels with 0.15% Ti austenized at 115$0^{\circ}C$. The hardness of HSLA cast steels austenized for 2 hrs at $1150^{\circ}C$ increased at a ten-minute tempering, and after that, the hardness kept almost sililar level except HSLA cast steels with 0.15% V.

• Journal of Electrical Engineering and Technology
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• v.9 no.1
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• pp.280-285
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• 2014

In order to evaluate the insulation deterioration in the stator windings of five gas turbine generators(137 MVA, 13.8 kV) which has been operated for more than 13 years, diagnostic test and AC dielectric breakdown test were performed at phases A, B and C. These tests included measurements of AC current, dissipation factor, partial discharge (PD) magnitude and capacitance. ${\Delta}I$ and ${\Delta}tan{\delta}$ in all three phases (A, B and C) of No. 1 generator stator windings showed that they were in good condition but PD magnitude indicated marginally serviceable and bad level to the insulation condition. Overall analysis of the results suggested that the generator stator windings were indicated serious insulation deterioration and patterns of the PD in all three phases were analyzed to be internal, slot and spark discharges. After the diagnostic test, an AC overvoltage test was performed by gradually increasing the voltage applied to the generator stator windings until electrical insulation failure occurred, in order to determine the breakdown voltage. The breakdown voltage at phases A, B and C of No. 1 generator stator windings failed at 28.0 kV, 17.9 kV, and 21.3 kV, respectively. The breakdown voltage was lower than that expected for good-quality windings (28.6 kV) in a 13.8kV class generator. In the AC dielectric breakdown and diagnostic tests, there was a strong correlation between the breakdown voltage and the voltage at which charging current increases abruptly ($P_{i1}$, $P_{i2}$).