• Korean Journal of Crystallography
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• v.11 no.3
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• pp.137-146
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• 2000

The stoichiometric mix of evaporating materials for he CuInS₂ single crystal thin films was prepared. To obtain the single crystal thin films, CuINS₂ mixed crystal was deposited on etched semi-insulator GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperature were 640℃ and 430℃, respectively and the thickness of the single crystal thin films was 2 ㎛. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility deduced from Hall data are 9.64x10/sup 22//㎥ and 2.95x10/sup -2/ ㎡/V·s, respectively at 293 K. he optical energy gap was found to be 1.53 eV at room temperature. From the photocurrent spectrum obtained by illuminating perpendicular light on the c-axis of the thin film, we have found that the values of spin orbit coupling splitting ΔSo and the crystal field splitting ΔCr were 0.0211 eV and 0.0045 eV at 10K, respectively. From PL peaks measured at 10K, were can assign the 807.7 nm (1.5350 eV) peak to E/sub x/ peak of the free exciton emission, the 810.3 nm(1.5301 eV) peak to I₂ peak of donar-bound exciton emission and the 815.6 nm(1.5201 eV) peak to I₁ peak of acceptor-bound excition emission. In addition, the peak observed at 862.0 nm(1.4383 eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• Advances in materials Research
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• v.1 no.1
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• pp.75-81
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• 2012

In this work, the Co-doped ZnO rods were prepared by the hydrothermal method. The size of these rods can be changed from micro-size to nano-size by using different solutions during the preparation. The results of transmission electron microscopy (TEM) and selected area electron diffraction (SAED) showed that the as-prepared nano-sized Co-doped rods have single-crystal structure. The polarized Raman experiments were presented on an individual micro-sized Co-doped ZnO rod in the $X(YY)\vec{X}$, $X(ZY)\vec{X}$ and $X(ZZ)\vec{X}$ configurations, the results of polarized Raman indicated that these rods are crystallized and their growth direction is parallel to c-axis.

• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.256-262
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• 1999

Sputter deposited CoCr(Mo)/Si film were studied with emphasis on the correlation between magnetic properties and crystallographic orientation. The perpendicular coercivities of CoCr films decreased with Si underlayer thickness, whereas those of CoCrMo films increased with Si underlayer thickness. It has been explained that additions of the larger atomic radius Mo atoms in CoCr films impedes crystal growth resulting in a decrease in grain size, thus this small grain size may induce high perpendicular coercivity. The c-axis alignment of CoCrMo film was improved due to addition of 2at.%Mo. It means CoCrMo layer grow self-epitaxial directly from orientation and structure of Si underlayer when the main layer grow on underlayer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.147-148
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• 2007

In this study, the technology to grow oriented nanotube thin film from dip-coated $TiO_2$ using hydrothermal method has been successfully developed. The effects of preparation parameters, such as reaction temperature, duration and post treatment conditions on the film morphologies and the adherence to the substrate, have been examined. A general formation mechanism of oriented titanate nanotube thin film is proposed in terms of the detailed observation of the products via two dimensional surface FESEM studies and HRTEM images. The overall formation of $TiO_2-based$ nanotube thin film can be summarized with three successive steps: (1) $TiO_2$ dissolving and amorphous $Na_2TiO_3$ deposition process; (2) layered $Na_2Ti_3O_7$ formation via spontaneous crystallization and rapid growth process; (3) formation of nanotube thin film via $Na_2Ti_3O_7$ splitting and multilayer scrolling process of (100) planes around the c axis of $Na_2Ti_3O_7$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.622-625
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• 2022

YBa₂Cu₃O_7-y bulk as a high temperature oxide superconducting conductor has the high critical temperature of 92 K. YBa₂Cu₃O_7-y bulk superconductors have been fabricated by a seeded melting growth. Magnetic properties were studied by using superconductor of melted YBa₂Cu₃O_7-y oxides. It was demonstrated that Y₂BaCuO₅ particles acts as a pinning center which plays an important role on the magnetic properties. The thickness of the upper and lower pellets of the YBa₂Cu₃O_7-y bulk was formed at 40 mm with 55 g of the composition, and the YBa₂Cu₃O_7-y superconductor was manufactured through a heat treatment process. Manufacturing the superconducting bulk, it is possible to improve the pore density of the superconducting bulk by providing a path through which oxygen could be emitted.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.445-454
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• 2001

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10$^{16}$ cm$^{-3}$ , 296$\textrm{cm}^2$/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.

• Journal of the Korean Magnetics Society
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• v.21 no.1
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• pp.10-14
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• 2011

We have measured the ferromagnetic resonance (FMR) signal in as deposited and $400^{\circ}C$ annealed CoFeB/MgO thin film to investigate the annealing effect on magnetic anisotropies and FMR linewidth (${\Delta}H_{PP}$). The uniaxial anisotropy field ($H_{K1}$) was only observed in the as deposited sample. Whereas, in the $400^{\circ}C$ annealed sample, the biaxial anisotropy field ($H_{K2}$) was additionally observed in accompany with uniaxial anisotropy field ($H_{K1}$). The appearance of biaxial anisotropy fields was originated from the crystalline growth of bcc CoFeB(001) from the MgO(001) interface and by the B diffusion during thermal annealing. Also, the ${\Delta}H_{PP}$ of $400^{\circ}C$ annealed sample was increased compared with that of as deposited sample, which was due to the broad distribution of the magnetization axis by the biaxial anisotropy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the $ZnGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $ZnGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnGa_{2}Se_{4}$ single crystal trun films measured from Hall effect by van der Pauw method are $9.63{\times}10^{17}cm^{-3}$, $296cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c axis of the $ZnGa_{2}Se_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 251.9 meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on $ZnGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton $(A^{0},X)$ having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_{2}Se_{4}$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},345cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_{2}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high Quality crystal and neutral bound exiciton $(D^{0},X)$ having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.