Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Characteristic of n-ZnO:In/p-Si (111) Heterostructure by Pulsed Laser Deposition

PLD 법으로 증착된 n-ZnO:In/p-Si (111) 이종접합구조의 특성연구

  • 장보라 (한국해양대학교 나노반도체공학과) ;
  • 이주영 (한국해양대학교 나노반도체공학과) ;
  • 이종훈 (한국해양대학교 나노반도체공학과) ;
  • 김준제 (한국해양대학교 나노반도체공학과) ;
  • 김홍승 (한국해양대학교 나노반도체공학과) ;
  • 이동욱 (동의대학교 나노공학과) ;
  • 이원재 (동의대학교 나노공학과) ;
  • 조형균 (성균관대학교 신소재공학과) ;
  • 이호성 (경북대학교 신소재공학과)
  • Published : 2009.05.01
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Abstract

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

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References

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