• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.271-281
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• 1992

Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.224-230
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• 1999

$SrBi_{2x}Ta_2O_9$ (SBT) thin films were prepared on platinized silicon substrates by MOD process, and their ferroelectric and leakage current characteristics were investigated. The grain size of the MOD derived SBT films increased with increasing the BI/Ta mole ration. Although the SBT films with x of 0.8~1.2 were composed of the equiaxed grains, the elongated grains were also observed for the SBT films with x of 1.4 and 1.6. The SBT film with x of 1.2 exhibited the optimum ferroelectric properties of 2PR : 9.79 $\muC/\textrm{cm}^2$ and Ec : 24.2kV/cm at applied voltage of 5V. The leakage current density of the SBT films increased with increasing the BI/Ta mole ratio. With post annealing process, 2Pr and $E_c$of the SBT film with x of 1.2 increases 11.3 $\muC/\textrm{cm}^2$ and 39.6kV/cm, respectively. decrement of the leakage current density by post annealing process increased remarkably with increasing the Bi/ta mole ratio, and the SBT film with x=1.6 exhibited the lowest leakage current density after post annealing process.

• Honam Mathematical Journal
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• v.36 no.4
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• pp.913-919
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• 2014

We investigate the relationships between the space X and the hyperspaces concerning admissibility and connectedness im kleinen. The following results are obtained: Let X be a Hausdorff continuum, and let A, $B{\in}C(X)$ with $A{\subset}B$. (1) If X is c.i.k. at A, then X is c.i.k. at B if and only if B is admissible. (2) If A is admissible and C(X) is c.i.k. at A, then for each open set U containing A there is a continuum K and a neighborhood V of A such that $V{\subset}IntK{\subset}K{\subset}U$. (3) If for each open subset U of X containing A, there is a continuum B in C(X) such that $A{\subset}B{\subset}U$ and X is c.i.k. at B, then X is c.i.k. at A. (4) If X is not c.i.k. at a point x of X, then there is an open set U containing x and there is a sequence $\{S_i\}^{\infty}_{i=1}$ of components of $\bar{U}$ such that $S_i{\longrightarrow}S$ where S is a nondegenerate continuum containing the point x and $S_i{\cap}S={\emptyset}$ for each i = 1, 2, ${\cdots}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.367-371
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• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• Transactions of the Korean hydrogen and new energy society
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• v.13 no.3
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• pp.181-189
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• 2002

A series of multicomponent $Zr_{0.8}Ti_{0.2}Mn_{0.4}V_{0.6}Ni_{1-x}Fe_{x}$ (x=0.00, 0.08, 0.15, 0.22, and 0.30) alloys are prepared and their oystal structure and P-C-T curves are examined. The electrochemical properties of these allqys such as activation conditions, discharge capacity, cycling performance are also investigated. $Zr_{0.8}Ti_{0.2}Mn_{0.4}V_{0.6}Ni_{1-x}Fe_{x}$ (x=0.00, 0.08, 0.15, 0.22 and 0.30) have the C14 Laves phase hexagonal structure. The electrode was activated by the hot-charging treatment. The best activation conditions were the current density 120 mA/g and the hot-charging time 12h at $80^{\circ}C$ in the case of the alloy with x=0.00. The discharge capacity increased rapidly until the fourth cycle and then decreased. The discharge capacity increased again from the 13th cycle, arriving at 234 mAh/g at the 50th cycle. The discharge capacily just after activation decreases with the increase in the amount of the substituted Fe but the cycling performance is improved. The discharge capacity after activation of the alloy with x=0.00 is 157 mAh/g at the current density 120 mA/g. $Zr_{0.8}Ti_{0.2}Mn_{0.4}V_{0.6}Ni_{0.85}Fe_{0.15}$ is a good composition with a medium quantity of discharge capacities and a good cycling performance. The ICP analysis of the electrolyte for these electrodes after 50 charge-discharge cycles shows that the concentrations of V and Zr are relatively high. Another series of multicomponent $Zr_{0.8}Ti_{0.2}Mn_{0.4}V_{0.6}Ni_{0.85}M_{0.15}$ (M = Fe, Co, Cu, Mo and Al) alloys are prepared. They also have the C14 Laves phase hexagonal structure. The alloys with M = Co and Fe have relatively larger hydrogen storage capacities. The discharge capacities just after activation are relatively large in the case of the alloys with M = Al and Cu. They are 212 and 170 mAh/g, respectivety, at the current density 120mA/g. The $Zr_{0.8}Ti_{0.2}Mn_{0.4}V_{0.6}Ni_{0.85}Co_{0.15}$ alloy is the best one with a relatively large discharge capacity and a good cycling performance.

• Communications of the Korean Mathematical Society
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• v.9 no.4
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• pp.837-846
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• 1994

Let A denote a unital normed algebra over a field K = R or C and let e be the identity of A. Given $a \in A$ and $x \in A$ with $\Vert x \Vert = 1$, let $$ V(A, a, x) = {f(ax) : f \in A', f(x) = 1 = \Vert f \Vert}. $$ Then the (Bonsall and Duncan) numerical range of an element $a \in A$ is defined by $$ V(a) = \cup{V(A, a, x) : x \in A, \Vert x \Vert = 1}, $$ where A' denotes the dual of A. In [2], $V(a) = {f(a) : f \in A', f(e) = 1 = \Vert f \Vert}$.

• Applied Chemistry for Engineering
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• v.16 no.3
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• pp.328-336
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• 2005

In order to remove the NO contained in exhaust gas by the non-selective catalyst reduction method, the catalysts were prepared by varing the loading amount of Ag and V into ${\gamma}-Al_2O_3$. The conversion of $NO_x$ using the prepared catalysts was studied by varying the temperatures, $O_2$ concentrations and $SO_2$ concentrations using. The influence of the catalyst structure on $NO_x$ conversion was studied through the analysis of the physical properties of the prepared catalysts. In the case of $AgV/{\gamma}-Al_2O_3$ catalyst, the $NO_x$ conversion was lower than that of $Ag/{\gamma}-Al_2O_3$ at higher temperatures but higher than that of $Ag/{\gamma}-Al_2O_3$ at lower temperatures. Even though $SO_2$ was contained in the reaction gas, the $NO_x$ conversion did not decrease. Based on the analysis including XRD, XPS, TPR, and UV-Vis DRS before and after the experiments, the experimental results were examined. The results indicated that, $NO_x$ conversion decreased at higher temperatures since Ag oxide could not be maintained well due to the addition of V, whereas it increased at temperatures lower than $300^{\circ}C$ due to the catalytic action of V.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1322_1323
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• 2009

The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were about -3.45%/K.

• Bulletin of the Korean Mathematical Society
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• v.59 no.1
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• pp.241-263
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• 2022

We consider a nonlinear Schrödinger equation with critical frequency, (P_𝜀) : 𝜀²∆v(x) - V(x)v(x) + |v(x)|^p-1v(x) = 0, x ∈ ℝ^N, and v(x) → 0 as |x| → +∞, for the infinite case as described by Byeon and Wang. Critical means that 0 ≤ V ∈ C(ℝ^N) verifies Ƶ = {V = 0} ≠ ∅. Infinite means that Ƶ = {x₀} and that, grossly speaking, the potential V decays at an exponential rate as x → x₀. For the semiclassical limit, 𝜀 → 0, the infinite case has a characteristic limit problem, (P_inf) : ∆u(x)-P(x)u(x) + |u(x)|^p-1u(x) = 0, x ∈ Ω, with u(x) = 0 as x ∈ Ω, where Ω ⊆ ℝ^N is a smooth bounded strictly star-shaped region related to the potential V. We prove the existence of an infinite number of solutions for both the original and the limit problem via a Ljusternik-Schnirelman scheme for even functionals. Fixed a topological level k we show that v_k,𝜀, a solution of (P_𝜀), subconverges, up to a scaling, to a corresponding solution of (P_inf ), and that v_k,𝜀 exponentially decays out of Ω. Finally, uniform estimates on ∂Ω for scaled solutions of (P_𝜀) are obtained.