• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.93-93
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• 2008

This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + $H_2$).The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at $1180^{\circ}C$ on AlN of after annealing.

• Journal of Environmental Health Sciences
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• v.32 no.6
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• pp.578-584
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• 2006

This research was conducted to estimate the effect of C/N ratio control on composting of TNT (2,4,6 trinitrotoluene)-contaminated soil. Glucose or acetone was selected to control C/N ratio of the contaminated soil. The C/N ratios of the controlled experiment and no controlled one were 26.0 and 6.6, respectively. During 45days, the degradation efficiency (96.0 or 91.8%) of acetone or glucose C/N ratio controlled soil was higher than that (78.4%) of no C/N ratio controlled case. The first order degradation rate constant of glucose or acetone C/N ratio control was 0.0641 or 0.0820/day. This constant was over twice 0.0356/day of no C/N ratio control. The C/N ratio control with glucose or acetone also showed a rather high $CO_2$ evolution than that without C/N ratio control. It was proven that C/N ratio control for composting of TNT-contaminated soil improved the treatment efficiency.

• Bulletin of the Korean Mathematical Society
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• v.36 no.4
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• pp.799-808
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• 1999

We investigate when the .product of two smooth manifolds admits a weakly Lagrangian embedding. Assume M, N are oriented smooth manifolds of dimension m and n,. respectively, which admit weakly Lagrangian immersions into $C^m$ and $C^n$. If m and n are odd, then $M\;{\times}\;N$ admits a weakly Lagrangian embedding into $C^{m+n}$ In the case when m is odd and n is even, we assume further that $\chi$(N) is an even integer. Then $M\;{\times}\;N$ admits a weakly Lagrangian embedding into $C^{m+n}$. As a corollary, we obtain the result that $S^n_1\;{\times}\;S^n_2\;{\times}\;...{\times}\;S^n_k$, $\kappa$>1, admits a weakly Lagrang.ian embedding into $C^n_1+^n_2+...+^n_k$ if and only if some ni is odd.

• Elastomers and Composites
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• v.39 no.4
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• pp.309-317
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• 2004

Synthesis of fullerene oxides [$C_{70}O_n$] ($n=1{\sim}3$ or n=1) in solid state by fullerene [$C_{70}$] and several oxidants such as 3-chloroperoxy benzoic acid, chromium(VI) oxide, benzoyl peroxide, and trichloroisocyanuric acid was taken place under microwave irradiation. The reactivity in solid state oi fullerene [$C_{70}$] with various oxidants under same microwave condition increased in the order of 3-chloroperoxy benzoic acid > chromium(VI) oxide > trichloroisocyanuric acid ${\simeq}benzoyl$ peroxide. The MALDI-TOF-MS, UV-visible spectra and HPLC analysis confirmed that the products of fullerene oxidation were [$C_{70}O_n$] ($n=1{\sim}3$ or n=1).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.2
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• pp.86-91
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• 2005

The layered structure of organic-inorganic perovskite hybrids, $(C_nH_{2n+1}NH_3)_2CuC1_4$ (n = 6, 8, 10, 12) have synthesized. In $(C_nH_{2n+1}NH_3)_2CuC1_4$ compounds, the long-chain protonated alkylammonium ions as tilted bilayer type are inserted into perovskite-type layers of corner sharing $CuCl_6$ octahedron. Three solid phases have been characterized in the perovskite layered compound $(C_nH_{2n+1}NH_3)_2CuC1_4$ using HT-XRD and DSC. The $(C_nH_{2n+1}NH_3)_2CuC1_4$ compounds shows solid-solid phase transitions with stepwise increasing of the layer distance. Three different structures are explained by the conformational change of the long-chain protonated alkylammonium ions.

• Journal of the Korean Mathematical Society
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• v.32 no.3
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• pp.471-482
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• 1995

A complex n-dimensional Kaehlerian manifold of constant holomorphic sectional curvature c is called a comples space form, which is denoted by $M_n(c)$. A complete and simply connected complex space form consists of a complex projective space $P_nC$, a complex Euclidean space $C^n$ or a complex hyperbolic space $H_nC$, according as c > 0, c = 0 or c < 0. The induced almost contact metric structure of a real hypersurface M of $M_n(c)$ is denoted by $(\phi, \zeta, \eta, g)$.

• Journal of Powder Materials
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• v.15 no.6
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• pp.503-508
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• 2008

Ti(C,N) solid solutions in hot-pressed Ti($C_{x}N_{1-x}$) (x=0.0, 0.3, 0.5, 0.7, 1.0) and 40TiC-40TiN-20Ni (in wt.%) cermet were characterized in this study. For hot-pressed Ti(C,N)s, the lattice parameters and hardness values of Ti(C,N) were determined by using XRD (X-Ray Diffraction) and nanoindentation. The properties of hot-pressed Ti(C,N) samples changed linearly with their carbon or nitrogen contents. For the TiC-TiN-Ni cermet, the hardness of the hard phase and binder phase were determined by nanoindentation in conjunction with microstructural observation. The measured hardness values were ${\sim}8.7$ GPa for the binder phase and ${\sim}28.7$ GPa for the hard phase, which was close to the hardness of hot-pressed Ti($C_{0.7}N_{0.3}$).

• Journal of the Korean institute of surface engineering
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• v.40 no.6
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• pp.279-282
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• 2007

Cr-Mo-Si-C-N coatings were deposited on steel and Si wafer by a hybrid system of AIP and sputtering techniques using Cr, Mo and Si target in $Ar/N_2/CH_4$ gaseous mixture. Instrumental analyses of XRD and XPS revealed that the Cr-Mo-Si-C-N coatings must be a composite consisting of fine(Cr, Mo and Si)(C and N) crystallites and amorphous $Si_3N_4$ and SiC. The hardness value of Cr-Mo-Si-C-N coatings significantly increased from 41 GPa of Cr-Mo-C-N coatings to about 53 GPa with Si content of 9.3 at.% due to the refinement of (Cr, Mo and Si)(C and N) crystallites and the composite microstructure characteristics. A systematic investigation of the microstructures and mechanical properties of Cr-Mo-Si-C-N coatings prepared with various Si contents is reported in this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.834-837
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• 2003

In this study, Ohmic contacts make on 3C-SiC using TiN. Ohmic contact resistivity of TiN/3C-SiC was evaluated. Specific contact resistance was calculated by Circular-TLM(transmission line model) method and physics properties were measured using XRD, SEM, respectively. TiN contact is stable at high temperatures and a good diffusion barrier material. The TiN/3C-SiC contacts are thermally stable to annealing temperatures up to $1000^{\circ}C$. The TiN thin-film depostied on 3C-SiC substraes have good electrical properties. Therefore, the TiN/3C-SiC contact can be usefully applied for high-temperature MEMS applications over $500^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.235-252
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• 1992

(Ti, Al)N films were deposited on 304 stainless steel sheet by D.C. magnetron sputtering using Al target and Ti plate. The high temperature oxidation of (T, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The high temperature oxidation test of (Ti, Al)N showed that (Ti, Al)N has better high temperature resistance than TiN and TiC films. TiC films were cracked at 40$0^{\circ}C$ in air TiN films quickly were oxidised at $600^{\circ}C$, were spalled more than $700^{\circ}C$. But (Ti, Al)N films are relatively stable to$ 900^{\circ}C$. The good resistance to high temperature oxida-tion of (Ti, Al)N films are due to the formation of dense Al2O3 and TiO2 oxide layer. Especially, Al2O3 oxide layer is more important. The results obtained from this study show, it is believe that the (Ti, Al)N film by D.C. magnetron sputtering is promising for the use of high temperature and wear resistance mate-rials.