• 자원환경지질
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• 제32권1호
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• pp.113-121
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• 1999

Coal is both source rock and reservoir rock for the coalbed gas. Coalbed gas. Coalbed gas is predominantly methane and has a heating value of approximatly 1000 BTU/$ft^3$. Most of methane is stored in the coal as a monomolecular layer adsorbed on the internal surface of the coal matrix. The amount of methane stored in coal is related to the rank and the depth of the coal. THe higher the coal rank and the deeper the coal seam is presently buried, the greater its capacity to hold gas. Most of Korean Coal is anthracite or metaanthracite, Ro. 3.5~5.5%, and total reserves are 1.6 billion metric tons. The domestic demand for coal was drastically decreased and the rationalization policy carried out from 1987 on coal industry. Now that a large number of coal mines was closed only a few mines continued to produce not more than 5 million tons for year. It is therefore recommended to formulate a strategy to explore and exploit the resources of coalbed methane in Korea.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1292-1297
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• 1997

본 연구에서는 latch-up 개선책의 일환으로 개발중인 매립층을 갖는 retrograde well의 형성기술과 더불어 공정 단순화를 목적으로 개발된 BILLI (Buried Implanted Layer for Lateral Isolation) well 구조[1]에 대한 공정 유기 결함을 분석하고 그에 의한 소자 열화 특성을 분석 하였으며 그 개선책을 제시 하고자 하였다. 매립층 형성에 의한 유기결함은 접합 누설전류와 Gate oxide 신뢰성을 열화 시켰으나 이온주입 후 $1000^{\circ}C$ 이상의 온도에서 10sec 정도의 RTP anneal에 의해 그 소자 특성이 개선되며 표면 결함이 감소함을 알 수 있었다.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2001년도 토목섬유기술위원회 학술세미나 논문집
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• pp.21-31
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• 2001

The last 30 years have been significant worldwide growth in the use of EPS as a lightweight fill material. A new construction method was introduced, which reduces earth pressure acting on culvert and conduit by placing a thin layer of EPS. This paper analyzes the compressible inclusion function of EPS and geogrid which can results in reduction of earth pressure by arching that is the behaviour of soil-structure system involving redistribution of soil stress around the structure. Field test was conducted to evaluate the reduction of vertical earth pressure using EPS and geogrid inclusion. Based on field test it is found that the magnitude of reduced vertical earth pressure was about 24~50% compared to conventional method.

• 마이크로전자및패키징학회지
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• 제9권4호
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• pp.25-29
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• 2002

기존 홀 센서의 단점을 개선하기 위해서 트랜치를 이용한 수직 홀 센서를 제작하였다. 수직 홀 센서는 센서의 칩 표면에 수평 자계를 검출할 수 있으며, 홀 센서는 실리콘 직접 본딩 기술에 의해 제작된 SOI 기판 위에 제작하였다. 기판 아래의 $SiO_2$층과 마이크로머시닝에 의한 트랜치가 홀 센서의 동작 영역을 정의한다. 홀 센서의 감도는 150V/AT로 측정되었으며 안정된 값을 나타내었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 B
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• pp.991-993
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• 2003

본 논문에서는 영구자석 기기에서 발생하는 d-q축간의 상호 포화(cross saturation) 문제에 대해 다루었고, 이를 고려한 d축과 q축의 전류에 따른 전동기의 특성값을 수치 해석적으로 도출하는 방법을 제시하였다. 아울러 다층 회전자 구조를 지닌 매입형 영구자석 전동기(multi-layer buried magnet synchronous motor)의 d축 및 q축 인덕턴스 값을 교차 결합 특성(Cross-Coupling)을 고려하여 수치 해석적 기법을 통해 도출하였으며, 실험값과의 비교를 통해서 기존의 해석 방법보다 우수함을 입증하였다.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2006년도 춘계학술대회 논문집
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• pp.342-346
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• 2006

This paper describes ground surface potential rises and touch voltage. The more soil resistivity of upper layer is lower, the more ground surface potential rise is increased. Ground surface potential rise is increased as the buried depth of ground rod in lowered. Ground surface potential rises were measured in the test site and compared with results by CDEGS program. Touch voltages according to the separation distance of ground rod were measured in four directions. Touch voltages were remarkably changed by separation distance and contact position.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.251-253
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• 2002

We have fabricated a novel Vertical Trench Hall-Effect Device sensitive to the magnetic field parallel to the sensor chip surface for non-contact angular position sensing applications. The Vertical Trench Hall-Effect Device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 150 V/AT is measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.163-166
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2\;and\;Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability

• 대한전자공학회논문지
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• 제23권6호
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• pp.780-788
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• 1986

1.3\ulcorner GaInAsP BH(Buried Heterostructure) lasers were fabricated on the p-InP substrate. Two step chemical etching processes and melt-back etching technique during 2nd epitaxy were used for BH active layer. BH laser had the threshold current, Ith, of 72mA(23\ulcorner), peak wavelength of 1.2937\ulcorner, nd of 10-20%, and To of 85K. They operated in single mode under pulse condition up to 1.4 Ith. CW(DC) operation was successfully performed at room temperature.

• 대한전자공학회논문지
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• 제23권5호
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• pp.692-698
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• 1986

To fabricate digital I\ulcorner devices which are compatible with analog devices in a chip, phosphorus is implanted in the buried layer of I\ulcorner part which has already been diffused with arsenic impurity. Experimental results show that the muminim propagation delay time of I\ulcorner ring oscillator is 16-18 ns when the upward current gain of I\ulcorner transistor is 6-10.