Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.11a
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- Pages.163-166
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- 2003
The thermal conductivity analysis of the SOI LIGBT structure using $Al_2O_3$
$Si/Al_2O_3/Si$ 형태의 SOI(SOS) LIGBT 구조에서의 열전도 특성 분석
- Kim, Je-Yoon (Korea University, Electrical Engineering) ;
- Kim, Jae-Wook (Korea University, Electrical Engineering) ;
- Sung, Man-Young (Korea University, Electrical Engineering)
- Published : 2003.11.13
Abstract
The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with