The Fabrication of Analog Compatible $I^2L$

아나로그와 양립하는 $I^2L$

  • Choi, Sang Hoon (Electronics and Telecommunications Research Institute) ;
  • Koo, Yong Seo (Electronics and Telecommunications Research Institute) ;
  • Koo, Jin Gun (Electronics and Telecommunications Research Institute) ;
  • Lee, Jin Hyo (Electronics and Telecommunications Research Institute)
  • 채상훈 (한국전자통신연구소) ;
  • 구용서 (한국전자통신연구소) ;
  • 구진근 (한국전자통신연구소) ;
  • 이진효 (한국전자통신연구소)
  • Published : 1986.05.01

Abstract

To fabricate digital I\ulcorner devices which are compatible with analog devices in a chip, phosphorus is implanted in the buried layer of I\ulcorner part which has already been diffused with arsenic impurity. Experimental results show that the muminim propagation delay time of I\ulcorner ring oscillator is 16-18 ns when the upward current gain of I\ulcorner transistor is 6-10.

Keywords