• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.360-363
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• 1997

The method of estimating life time of epoxy composites which be widely used for transformers has been studied in this paper. The breakdown properties of specimens are observed by appling high AC voltage at the room temperature from a series of the experiments. Afterwards, the breakdown time was determined under the constant voltage below the lowest breakdown voltage. Also, V-t properties were found out using weibull distribution widely used in the applications of discrete data for estimating life time of epoxy composites and life exponent n was gained properly. when life exponent is gained is found out, the tong breakdown life time at used voltage can be estimated from breakdown experiments in short time using reverse law of n power.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.25-29
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• 2000

In this paper, PET(Ployethylene Terephthalate) films with semiconducting and interface layers were investigated, The electrical properties, such as volume resistivity, tan$\delta$(dissipation factor) and breakdown strength at various temperatures were measured. Thermal analysis of PET and semiconducting films were measured and compared by differential scanning calorimeter(DSC) of each film. It is found that the volume resistivity of films(dependence on semiconducting interface layers)and electrical properties of PET films are changed ,Breakdown strength and dissipation factor of PET films with semiconducting layer (PET/S/PET) are decreased more greatly than PET and PET/PET films, due to the increase of charge density of charges at two contacted interfaces between PET and semiconductor, The dissipation factor of each films in increased with temperature,. For PET/S/PET film, is depended on temperature more than PET of PET/PET. However, the breakdown strength is increased up to 85$\^{C}$ and then decreased over 100$\^{C}$The electrical properties of PET films with semiconducting/interface layer are worse than without it It is due to a result of temperature dependency, which deeply affects thermal resistance property of PET film more than semiconducting/interface layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.118-123
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• 2007

The purpose of this work was to investigate the design and fabrication process effects on electrical properties in high capacitance multilayer ceramic capacitor (MLCC) with nickel electrode. Dielectric breakdown voltage and insulation resistance value were decreased with increasing stack layer number, but dielectric constant and capacitance were increased. With increasing green sheet thickness, dielectric breakdown voltage, C-V and I-V properties were also increased. The major reasons of the effects were thought to be the defects generated extrinsically during fabrication process and interfacial reactions formed between nickel electrode and dielectric layer. These investigations clearly showed the influence of both green sheet thick ness and stack layer number on the electrical properties in fabricating the MLCC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.509-510
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• 2007

The Breakdown properties of epoxy composites are used for transformers and sensor, which has been studied. As a result, From the measurements of breakdown voltage, the more hardener is increased the stronger breakdown strength at low temperature because the ester of hardener is increased. Breakdown strength at the high temperature is decreased because the temperature at $110^{\circ}C$ is near at $T_g$. When the filler is added, between epoxy and silica is formed interface. Therefore the charge is accumulated in it, and the electric field is concentrated, and breakdown strength is decreased than non-filled specimens. In the case of specimens, the treated with silane, the breakdown strength becomes much higher since this is suggested that silane coupling agent has been improved chemical bonding in the interfaces and has been relaxed the electric filed concentration.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.9
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• pp.1511-1517
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• 2016

The aim of this study is to improve of properties for electrical AC insulation breakdown strength using epoxy/micro-nano alumina composites with adding glycerol diglycidyl ether (GDE:1,3,5g). This paper deals with the effects of GDE addition for epoxy/micro alumina contents (40,50,60wt%)+surface modified nano alumina(1_phr) composites. 14 kinds specimen were prepared with containing epoxy resins, epoxy micro composites and epoxy nano-micro alumina mixture composites. Average particle size of nano and micro alumina used were 30nm and $1{\sim}2{\mu}m$, respectively. The micro alumina used were alpha phase with Heterogeneous and nano alumina were gamma phase particles of spherical shape. The electrical AC insulation breakdown strength was evaluated by sphere to sphere electrode system and raising velocity 1kV/s. The AC breakdown strength decreased insulation properties of multi-composites according to increasing micro alumina and GDE addition contents.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.151-156
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• 2003

High temperature superconductor can only be applied against an engineering specofication that has to be determined for each particular application form the design requirements for economic viability and for operation margins in service. However, in order to realize the HTS transformer, it is necessary to establish the high voltage insulation technique in cryogenic temperature. Therefore, the composite insulation of double pancake coil type transformer are described and AC breakdown voltage characteristics of liquid nitrogen(LN$_2$) under HTS pancake coil electrode made by Bi-2223/Ag are studied. The Breakdown of LN$_2$ is dominated electrode shape and distance. The influence of pressure on breakdown voltage is discussed with th different electrode. For the electrical insulation design of turn-to-turn insulation for the HTS transformer, we tested breakdown strength of insulation sheet under varying pressure. And we investigated surface flashover properties of LN$_2$ and complex conition of cryogenic gaseous nitrogen(CGN$_2$) obove a LN$_2$ surface. The surface voltage of GFRP was measured as a function of thickness and electrode distance in LN$_2$ and complex condition of CGN$_2$ above a LN$_2$ surface. this research presented information of electrical insulation design for double pancake coil(DPC) type HTS transformer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.285-286
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• 2008

Recently, epoxy based nano-composites are being increasingly investigated for their electrical properties, since the introduction of nano fillers demonstrate several advantages in their properties when compared with the similar properties obtained for epoxy systems with micrometer sized fillers. We calculated scale and shape parameter using dielectric strength. In this paper, it is investigated that the allowable' breakdown probability of specimens is stable at some value using Weibull statistics. Therefore we found that breakdown probability of specimens is stable until 20 [%].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.441-444
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• 2000

In this paper, dielectric properties of XLPE sheets of 22kV cable with semiconducting and water were investigated. The breakdown strength of XLPE under rod/needle electrode were measured at without oil. It is found that the dielectric properties such tan$\delta$ of XLPE sheet dependence on semiconducting and water layer and are decreased much lower increase with temperature. The breakdown strength and the electrode effect are obtained as a function of thickness, and a equation for the sheet thickness dependent breakdown strength is also discussion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.299-302
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• 2001

In this study, we are studied the electrical conduction and dielectric breakdown properties of insulating varnish. In order to analyze the molecular structure and physical properties of insulating varnishs, FT-lR was used. As the result, it can be confirmed that the peak of alcoholic group appeared in wavenumbers 3452[cm$\^$-1], the peak of =CH appeared in 3080[cm$\^$-1] and the peak of -CH appeared in 2919[cm$\^$-1] respectively. The following results were obtained from electrical properties of insulating varnish. The amplitude of current density was decreased by thickness increasing and the current density was effected by the thermal energy from external due to temperature increasing. In study temperature dependence of dielectric strength, the specimen of 10[$\mu\textrm{m}$] thickness was measurement from room temperature to 180[$^{\circ}C$]. It is confirmed that the temperature regions below 60[$^{\circ}C$] is due to electron avalanche breakdown and the temperature regions over 60[$^{\circ}C$] is due to free volume breakdown which makes electron movements easy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.78-81
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• 2004

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. Surface structure and adhesion of semiconductive silicon rubber by surface asperity was obtained from SEM and T-peel test. In addition, ac breakdown test was carried out for elucidating the change of electrical property by roughness treatment. From the results, Adhesive strength of semiconductive-insulation interface was increased with surface asperity. Dielectric breakdown strength by surface asperity decreased than initial Specimen, but increased from Sand Paper #1200. According to the adhesional strength data unevenness and void formed on the silicone rubber interface expand the surface area and result in improvement of adhesion. Before treatment Sand Paper #1200, dielectric breakdown strength was decreased by unevenness and void which are causing to have electric field mitigation small. After the treatment, the effect of adhesion increased dielectric breakdown strength. It is found that ac dielectric breakdown strength was increased with improving the adhesion between the semiconductive and insulating interface.