• Title/Summary/Keyword: Breakdown Energy

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Investigation of Degradative Signals on Outdoor Solid Insulators Using Continuous Wavelet Transform

  • Uzunoglu, Cengiz Polat
    • Journal of Electrical Engineering and Technology
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    • v.11 no.3
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    • pp.683-689
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    • 2016
  • Most outdoor solid insulators may suffer from surface degradations due to non-stationary currents that flow on the insulator surface. These currents may be classified as leakage, discharge and tracking currents due to their disturbing potencies respectively. The magnitude of these currents depends on the degree of the contamination of surface. The leakage signals are followed by discharge signals and tracking signals which are capable of forming carbonized tracking paths on the surface between high voltage and earth contacts (surface tracking). Surface tracking is one of the most breakdown mechanisms observed on the solid insulators, especially polymers which may cause severely reduced lifetime. In this study the degradations observed on polyester resin based insulators are investigated according to the IEC 587 Inclined Plane Test Standard. The signals are monitored and recorded during tests until surface tracking initiated. In order to prevent total breakdown of an insulator, early detection of tracking signals is vital. Continuous Wavelet Transform (CWT) is proposed for classification of signals and their energy levels observed on the surface. The application of CWT for processing and classification of the surface signals which are prone to display high frequency oscillations can facilitate real time monitoring of the system for diagnosis.

Plasma Initiation in the KAERIT Tokamak (KAERIT 토카막의 플라즈마 생성 실험)

  • In, Sang-Ryul;Bak, Hae-Ill
    • Nuclear Engineering and Technology
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    • v.20 no.4
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    • pp.246-252
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    • 1988
  • Experiments on the hydrogen gas breakdown for plasma initiation in the KAERIT tokamak are described. The influence of the applied loop voltage, toroidal magnetic field, gas filling pressure, error magnetic field, and preionization is studied. It is concluded that the magnitude of the error field is the most important factor for successful discharge initiation. The gas breakdown voltage becomes minumum when the external compensating field most effectively corrects the net error field. Even though preionization effect is not prominent, it is exhibited more easily in the case of worse confinement. Discharge initiation conditions experimentally determined are compared with those calcuated from a theoretical model. Some other unknown physical processes maintain the operation range somewhat narrower than predicted by the present theoretical model. However, this model is adequate for the breakdown phase of tokamaks.

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Design of 1,200 V Class High Efficiency Trench Gate Field Stop IGBT with Nano Trench Gate Structure (1 um 미만의 나노트렌치 게이트 구조를 갖는 1,200 V 고효율 트렌치 게이트 필드스톱 IGBT 설계에 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.4
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    • pp.208-211
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    • 2018
  • This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

Contamination Particle and Cracking Behavior of the Anodic Oxidation in Sulfuric Acid Containing Cerium Salt (세륨염을 첨가한 황산법 양극산화피막의 오염입자 및 열크랙 거동)

  • So, Jongho;Yun, Ju-Young;Shin, Jae-Soo
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.4
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    • pp.11-15
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    • 2018
  • The parts of equipment for semiconductor are protected by anodic aluminum oxide film to prevent corrosion. This study investigated contamination particle and cracking behavior of anodic oxidation in sulfuric acid containing cerium salt. The insulating properties of the sample were evaluated by measuring the breakdown voltage. It was confirmed that the breakdown voltage was about 50% higher when the cerium salt was added, and that the breakdown voltage after the heat treatment was 55% and 35% higher at $300^{\circ}C$ and $400^{\circ}C$, respectively. After heating at $300^{\circ}C$ and $400^{\circ}C$, cracks were observed in non cerium and cerium 3mM, and more cracks occur at $400^{\circ}C$ than at $30^{\circ}C$. The amount of contamination particles generated in the plasma is about 45% less than that of non-cerium specimens.

The Analysis of the Breakdown Voltage according to the Change of JTE Structures and Design Parameters of 4H-SiC Devices (4H-SiC 소자의 JTE 구조 및 설계 조건 변화에 따른 항복전압 분석)

  • Koo, Yoon-Mo;Cho, Doo-Hyung;Kim, Kwang-Soo
    • Journal of IKEEE
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    • v.19 no.4
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    • pp.491-499
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    • 2015
  • Silicon Carbide(SiC) has large advantage in high temperature and high voltage applications because of its high thermal conductivity and large band gap energy. When using SiC to design power semiconductor devices, edge termination techniques have to be adjusted for its maximum breakdown voltage characteristics. Many edge termination techniques have been proposed, and the most appropriate technique for SiC device is Junction Termination Extension(JTE). In this paper, the change of breakdown voltage efficiency ratio according to the change of doping concentration and passivation oxide charge of each JTE techniques is demonstrated. As a result, the maximum breakdown voltage ratio of Single Zone JTE(SZ-JTE), Double Zone JTE(DZ-JTE), Multiple Floating Zone JTE(MFZ-JTE), and Space Modulated JTE(SM-JTE) is 98.24%, 99.02%, 98.98%, 99.22% each. MFZ-JTE has the smallest and SZ-JTE has the largest sensitivity of breakdown voltage ratios according to the change of JTE doping concentration. Additionally the degradation of breakdown voltage due to the passivation oxide charge is analyzed, and the sensitivity is largest in SZ-JTE and smallest in MFZ-JTE, too. In this paper, DZ-JTE and SM-JTE is the best efficiency JTE techniques than MFZ-JTE which needs large doping concentration in short JTE width.

A Study on Energy Characteristics in Transient States of OF Cable Systems (OF 케이블 계통에서 과도상태시 에너지 특성 검토)

  • Jung, Chae-Kyun;Lee, Jong-Beom;Kang, Ji-Won;Lee, Dong-Il;Seo, Je-Ho
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.55 no.11
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    • pp.468-475
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    • 2006
  • This paper reviews the energy characteristics of oil filled cables in transient state such as grounding fault and lightning surge. Artificial grounding fault test was firstly performed in 2003 for the analysis of arc voltage and breakdown energy according to the fault current. In this paper, energy of OF cable is variously analysed at joint box based on the actual test. Then more various conditions such as installation types, section lengths and CCPU(Cable Covering Protection Unit) connection types are applied for the simulation using EMTP when the single line to ground fault and direct lightning stroke are occurred on actual underground power cable systems and combined power cable systems, respectively. Finally, the energy by the length of crossbonded lead and grounding lead as well as fault lasting time is also calculated using EMTP simulation.

Effect of firing temperature and degree of lamination on microstructure and electrical properties of ZnO-based multilayered ceramic chip varistors (소성온도와 적층수가 ZnO계 적층형 바리스터의 미세구조와 전기적 특성에 미치는 영향)

  • Kim, Chul-Hong;Kim, Jong-Hwa;Kim, Jin-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.08a
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    • pp.126-129
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    • 2003
  • The electrical properties of a ZnO-based multilayered chip varistor (abbreviated as MLV) were studied as functions of firing condition and the degree of lamination. The fundamental varistor characteristics such as nonlinear coefficient and breakdown voltage were independent of the degree of lamination. As the number of the laminated ceramic sheets increased, however, not only the energy handling capability but also the capacitance and the leakage current which are relevant to delayed response to the voltage surge and the pre-breakdown energy loss, respectively, increased. With the increase of firing temperature between $950^{\circ}C$ and $1150^{\circ}C$, both the capacitance and the leakage current of the MLV increased due mainly to the grain growth of ZnO and the volatilization of $BiO_2O_3$. High performance MLVs with clear electrode pattern were obtained at the firing temperature range of $l000{\sim}1050^{\circ}C$ in this experiment.

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Insulation Characteristics of Dry-air Insulated Switchgear for 72.5 kV Wind Power Generation (72.5 kV 풍력 발전용 Dry-air Switchgear의 절연 특성)

  • Chan-Hee Yang;Jin-Seok Oh;Hee-Tae Park;Young-il Kim
    • Journal of Wind Energy
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    • v.15 no.2
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    • pp.5-9
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    • 2024
  • This paper describes the insulation breakdown characteristics of 72.5 kV dry-air insulated switchgear under development for installation in a wind power generator when a lightning impulse voltage is applied. For this study, the weak point of insulation due to the electric field concentration of the switchgear's internal shape was identified by finite element method (FEM) analysis, and the shape was actually simulated to measure and analyze the polarity of the lightning impulse voltage and the insulation breakdown characteristics according to the gas pressure at dry-air pressures of 0.1 Mpa to 0.45 Mpa. This study derives the maximum electric field with a 50 % discharge probability for each switchgear internal insulation vulnerable point based on the actual test and electrical simulation, which will be useful as reference data for supplementing and changing insulation design in the future.

Observation of Discharge Mode Transient from Townsend to Glow at Breakdown of Helium Atmospheric Pressure Dielectric Barrier Discharge (헬륨 대기압 유전체 격벽 방전기의 타운젠트-글로우 방전 모드 전이 연구)

  • Bae, Byeongjun;Kim, Nam-Kyun;Yoon, Sung-Young;Shin, Jun-Seop;Kim, Gon-Ho
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.2
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    • pp.26-31
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    • 2016
  • The Townsend to glow discharge mode transition was investigated in the dielectric barrier discharge (DBD) helium plasma source which was powered by 20 kHz / $4.5 kV_{rms}$ high voltage at atmospheric pressure. The spatial profile of the electric field strength at each modes was measured by using the intensity ratio method of two helium emission lines (667.8 nm ($3^1D{\rightarrow}2^1P$) and 728.1 nm ($3^1S{\rightarrow}2^1P$)) and the Stark effect. ICCD images were analyzed with consideration for the electric field property. The Townsend discharge (TD) mode at the initial stage of breakdown has the light emission region located in the vicinity of the anode. The electric field of the light emitting region is close to the applied field in the system. Immediately, the light emitting region moves to the cathode and the discharge transits to the glow discharge (GD) mode. This mode transition can be understood with the ionization wave propagation. The electric field of the emitting region of GD near cathode is higher than that of TD near anode because of the cathode fall formation. This observation may apply to designing a DBD process system and to analysis of the process treatment results.

Improvement of Energy Storage Characteristics of (Ba0.7Ca0.3)TiO3 Thick Films by the Increase of Electric Breakdown Strength from Nano-Sized Grains (절연파괴특성 향상을 위한 나노미세구조 (Ba0.7Ca0.3)TiO3 후막 제조 및 에너지 저장 특성 평가)

  • Lee, Ju-Seung;Yoon, Songhyeon;Lim, Ji-Ho;Park, Chun-Kil;Ryu, Jungho;Jeong, Dae-Yong
    • Korean Journal of Materials Research
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    • v.29 no.2
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    • pp.73-78
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    • 2019
  • Lead free $(Ba_{0.7}Ca_{0.3})TiO_3$ thick films with nano-sized grains are prepared using an aerosol deposition (AD) method at room temperature. The crystallinity of the AD thick films is enhanced by a post annealing process. Contrary to the sharp phase transition of bulk ceramics that has been reported, AD films show broad phase transition behaviors due to the nano-sized grains. The polarization-electric hysteresis loop of annealed AD film shows ferroelectric behaviors. With an increase in annealing temperature, the saturation polarization increases because of an increase in crystallinity. However, the remnant polarization and cohesive field are not affected by the annealing temperature. BCT AD thick films annealed at $700^{\circ}C/2h$ have an energy density of $1.84J/cm^3$ and a charge-discharge efficiency of 69.9 %, which is much higher than those of bulk ceramic with the same composition. The higher energy storage properties are likely due to the increase in the breakdown field from a large number of grain boundaries of nano-sized grains.