• 제목/요약/키워드: Bonding Process

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모꾸메가네 장신구를 위한 은/동 접합 잉곳 소재 개발 (Development of the Ag/Cu Ingots for Mokumegane Jewelry)

  • 송오성;김종률;김명로
    • 한국산학기술학회논문지
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    • 제9권1호
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    • pp.9-15
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    • 2008
  • 모꾸메가네는 나무결 모양을 낼 수 있는 고부가가치가 가능한 장신구 소재이며 서로 다른 금속을 가공하기 위해 융점이 다른 두 가지 이상 금속을 적층하여 붙인 잉곳 제작이 필수적이다. 기존의 모꾸메가네용 잉곳은 숯을 이용한 환원성 분위기에서 경험에 근거한 육안 판별로 만들어져서 접합의 신뢰성과 후속 가공 도중 층간 분리가 일어나는 분제가 있었다. $900^{\circ}C$에서 2.5kg의 압력을 가하면서 진공 열처리로를 이용하여 90% 이상 접합율이 가능한 조건을 확인하였다. 계면에서의 계면 확산계수가 통상의 벌크 확산계수보다 100배 향상되는 것을 확인하였고 이종 접합시에 계면 확산계수를 확인하여 $700^{\circ}C$의 저온에서 10분동안 진공열처리, 90% 이상 접합율을 가진 모꾸메가네용 잉곳을 성공적으로 제조하였다. 제조된 잉곳으로 핸드폰 외장용 모꾸메가네 시작품을 성공적으로 제조할 수 있었다.

마이크로 광 조형기술에서의 통합성형공정의 개발 (Development of an Assembly-free Process for Micro-stereolithography Technology)

  • 이인환
    • 한국정밀공학회지
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    • 제21권9호
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    • pp.182-187
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    • 2004
  • As it is difficult to construct a micro-fluidic system composed of micro-mixers, micro-channels and/or micro-chambers in a single process, an assembly process is typically used. The assembling and bonding of micro-parts, however, introduces other problems. In this work, a virtual assembly process was developed that can be used to design various micro-systems before actual fabrication commences. In the process, the information required for the micro-stereolithography process is generated automatically. Consequently, complex micro-fluidic systems can be fabricated in a single process, thereby avoiding the need fur additional assembly or bonding processes. Using the developed process, several examples were fabricated.

Silicon-on-glass 공정에서 접합력 균일도 향상을 위한 고정단 설계 (Improvement of Bonding Strength Uniformity in Silicon-on-glass Process by Anchor Design)

  • 박우성;안준은;윤성진
    • 대한기계학회논문집B
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    • 제41권6호
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    • pp.423-427
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    • 2017
  • 본 논문은 silicon-on-glass(SOG) 공정에서 접합력 균일도 향상을 위한 고정단 설계에 대한 내용을 다룬다. SOG 공정은 전극이 형성된 유리 기판층과 실리콘 구조층의 양극접합을 기반으로 하며, 가속도 센서와 공진형 센서를 비롯한 고종횡비 구조를 갖는 다양한 실리콘 센서들의 제작에 널리 사용된다. 본 논문에서는 전극과 유리 기판층의 표면 사이에 발생하는 단차로 인한 불균일한 접합을 방지하기 위해, 실리콘 구조층에서 유리 기판층과 접합되는 부분과 전극과 겹쳐지는 부분을 트렌치(trench)를 이용해 분리하는 새로운 형상의 고정단을 제안한다. 본 고정단은 추가적인 공정 없이 기존의 SOG 공정으로 제작되는 디바이스들에 손쉽게 적용이 가능하다.

반도체 패키징용 에폭시 기반 접합 소재 및 공정 기술 동향 (Epoxy-based Interconnection Materials and Process Technology Trends for Semiconductor Packaging)

  • 엄용성;최광성;최광문;장기석;주지호;이찬미;문석환;문종태
    • 전자통신동향분석
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    • 제35권4호
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    • pp.1-10
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    • 2020
  • Since the 1960s, semiconductor packaging technology has developed into electrical joining techniques using lead frames or C4 bumps using tin-lead solder compositions based on traditional reflow processes. To meet the demands of a highly integrated semiconductor device, high reliability, high productivity, and an eco-friendly simplified process, packaging technology was required to use new materials and processes such as lead-free solder, epoxy-based non cleaning interconnection material, and laser based high-speed processes. For next generation semiconductor packaging, the study status of two epoxy-based interconnection materials such as fluxing and hybrid underfills along with a laser-assisted bonding process were introduced for fine pitch semiconductor applications. The fluxing underfill is a solvent-free and non-washing epoxy-based material, which combines the underfill role and fluxing function of the Surface Mounting Technology (SMT) process. The hybrid underfill is a mixture of the above fluxing underfill and lead-free solder powder. For low-heat-resistant substrate applications such as polyethylene terephthalate (PET) and high productivity, laser-assisted bonding technology is introduced with two epoxy-based underfill materials. Fluxing and hybrid underfills as next-generation semiconductor packaging materials along with laser-assisted bonding as a new process are expected to play an active role in next-generation large displays and Augmented Reality (AR) and Virtual Reality (VR) markets.

Wire-bonding의 길이 변화에 따른 주파수별 특성 분석 (Analysis of Frequency Response Depending on Wire-bonding Length Variation)

  • 권은진;문종원;류종인;박세훈;김준철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.551-552
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    • 2008
  • This paper presets a results of frequency response in variation of wire bonding length. A gold ball bonding is used as a wire bonding process, and a DPDT(double pole double thru) switch is adapted as a device for test. Wire length is ranged from 442um to 833um and a measured frequency range is from 1 GHz to 6 GHz. Little difference are measured in insertion loss and return loss depending on wire length. Measured S21 and S11 are -0.58 dB and -17.7 dB, respectively. S21 insertion loss is rising up and S11 insertion loss is falling down as the frequency is increased.

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액상확산접합한 Ni기 초내열합금의 등온응고거동에 미치는 모재결정입계의 영향 (The Effect of Base Metal Grain Boundary on Isothermal Solidification Phenomena during TLP Bonding of Ni Base Superalloys)

  • 김대업
    • Journal of Welding and Joining
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    • 제19권3호
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    • pp.325-333
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    • 2001
  • The effect of base metal grain size on isothermal solidification behavior of Ni-base superalloy, CMSX-2 during transient liquid phase (TLP) bonding was investigated employing MBF-80 insert metal. TLP-bonding of single crystal. coarse-grained and fine-grained CMSX-2 was carried out at 1373∼1548k for various holding time in vacuum. The eutectic width diminished linearly with the square root of holding time during isothermal solidification process for single crystal, coarse-grained and fine-grained base metals. The completion time for isothermal solidification decreased in the order ; single crystal, coarse-grained and fine-grained base metals. The difference of isothermal solidification rates produced when bonding the different base metals could be explained quantitatively by the effect of base metal grain boundaries on the apparent average diffusion coefficient of boron in CMSX-2.

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Evaluation for Al/Cu bonding by liquefaction after solid phase diffusion in the air

  • Kawakami, Hiroshi;Suzuki, Jippei;Fujiwara, Masanori;Nakajima, Junya;Kimura, Keiko
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2005년도 춘계학술발표대회 개요집
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    • pp.393-395
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    • 2005
  • The bonding for Aluminum and Copper in the air is investigated in this study. This bonding method does not include the special process of removing aluminum oxide films. In case of this bending, each metal Is heated at bonding temperature where is above eutectic temperature of Al-Cu system and below melting point of Aluminum. The liquefaction around the bonding surface occurs after the diffusion at solid state of each metal. This phenomenon is predicted by the temperature range above eutectic temperature of Al-Cu equilibrium phase diagram.

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