• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.11a
• /
• pp.327-328
• /
• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.05a
• /
• pp.609-610
• /
• 2010

• Proceedings of the Korean Society of Laser Processing Conference
• /
• 2006.11a
• /
• pp.85-89
• /
• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.830-833
• /
• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.347-350
• /
• 2001

A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.170-171
• /
• 2006

The chemical shift of SiOC film was observed according to the flow rate ratio. SiOC film has the broad main band of $880{\sim}1190cm^{-1}$ and the sharp Si-$CH_3$ bond at $1252cm^{-1}$, and the infrared spectra in the Si-O-C bond moved to low frequency according to the increasing of an oxygen flow rate. The chemical shift affected the carbon content in the SiOC film, and the decreasing of carbon atoms elongated the C-H bonding length, relatively. The main bond without the sharp Si-$CH_3$ bond at $1252cm^{-1}$ consisted of Si-C, C-O and Si-O bonds, and became the bonding structure of the Si-O-C bond.

• Applied Science and Convergence Technology
• /
• v.24 no.3
• /
• pp.60-66
• /
• 2015

The modified amorphous GeTe formed by pulsed laser irradiation in as-grown GeTe has been analyzed in terms of variations of local bonding structure using extended x-ray absorption fine structure (EXAFS). The modified GeTe film has octahedral-like Ge-Te bonding structure that can be effectively induced by irradiation process. The EXAFS data clearly shows that the irradiation can lead to reduction of the average coordination number. Variations in the transition temperature for the irradiated film during crystallization can be described by the presence of octahedral-like local structure.

• The Journal of Korean Academy of Prosthodontics
• /
• v.30 no.4
• /
• pp.481-492
• /
• 1992

Author measured the bonding strength between Dental Porcelain and Nonprecious Dental Alloy and analyzed diffusion Phenomena at the interfaceby by Auger electron spectroscopy and also Electron spectroscopy for Chemical Analysis. The each specimen was sputtered with Al, Cr, In and Sn. 1. Ni whic is the main element of the matris of dental nonprecious alloy diffuse more than the other element and the Ni diffusion rate of each specimen was well coordinated with the bonding strength of each. 2. The Sn thin film suppress the diffusion rate of Ni of matrix into the Dental Porcelain than the In or Cr thin films. 3. The Al thin film suppress the diffusion rate of Ni than the Sn thin film. 4. The main coponent of dental porcelain : Al, Si, Mo diffused into the matrix of alloy. It means that the each element of dental alloy and dental porelain diffused into the each other part.

• Journal of the Korean Society for Precision Engineering
• /
• v.27 no.7
• /
• pp.28-35
• /
• 2010

In the display industry, COG bonding method is being applied to production of LCD panels that are used for mobile phones and monitors, and is one of the mounting methods optimized to compete with the trend of ultra small, ultra thin and low cost of display. In COG bonding process, electrical characteristics such as contact resistance, insulation property, etc and mechanical characteristics such as bonding strength, etc depend on properties of conductive particles and epoxy resin along with ACF materials used for COG by manufacturers. As the properties of such materials have close relation to optimization of bonding conditions such as temperature, pressure, time, etc in COG bonding process, it is requested to carry out an in-depth study on characteristics of COG bonding, based on which development of bonding process equipment shall be processed. In this study were analyzed the characteristics of COG bonding process, performed the analysis and reliability evaluation on electrical and mechanical characteristics of COG bonding using ACF to find optimum bonding conditions for ACF, and performed the experiment on bonding characteristics regarding fine pitch to understand the affection on finer pitch in COG bonding. It was found that it is difficult to find optimum conditions because it is more difficult to perform alignment as the pitch becomes finer, but only if alignment has been made, it becomes similar to optimum conditions in general COG bonding regardless of pitch intervals.

• Composites Research
• /
• v.24 no.6
• /
• pp.56-63
• /
• 2011

The objective of this study is to investigate appropriate bonding methods of solar cells in order to apply solar cells, which have been receiving particular attention as a renewable energy due to fossil energy depletion and environment issues, to composite structures. Back-contact solar cells with approximately 24.2% energy conversion efficiency were used in this study. Since silicon-based solar cells are mechanically fragile, the secondary-bonding methods using adhesive were examined in this study. The experiment was conducted with three kinds of bonding materials such as EVA film, Resin film and elastic adhesive. The performance of solar cells for three types of adhesives under mechanical loading on test specimens is conducted. In addition, the measuring equipment was designed to evaluate the performance of the solar cells under mechanical loading in real time and the fracture characteristics depending on bonding materials were evaluated. The reason decreasing solar cells efficiency were analyzed and considered by Fractography. The results show that the solar cell performance is largely affected by bonding techniques. Moreover, the bonding method using elastic adhesive shows best solar cell efficiency.