• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.9
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• pp.45-51
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• 2014

This work carried out for the effective synthesis characteristics of graphene nanowall film by controlling the electric field in a RF plasma CVD process. For that, the bipolar bias voltage was applied to the substrate such as Si and glass materials for the best chemical reaction of positive and negative charges existing in the plasma. For supplying the seed formation sites on substrate and removing the oxidation layer on the substrate surface, the electron bombardment into substrates was performed by a positive few voltage in hydrogen plasma. After that, hydrocarbon film, which is not a graphene nanowall, was deposited on substrates under a negative bias voltage with hydrogen and methane gases. At this step, the film on substrates could not easily identify due to its transparent characteristics. However, the transparent film was easily changed into graphene nanowall by the final hydrogen plasma treatment process. The resultant raman spectra shows the existence of significant large 2D peaks corresponding to the graphene.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$to YMnO$_3$was 1.83. As a XPS analysis, the surface of etched CeO$_2$thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.25.1-28
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• 2000

In this study, $Y_2O_3$ thin films were etched with inductively coupled plasma (ICP). The etch rate of $Y_2O_3$ , and the selectivity of $Y_2O_3$ to YMnO$_3$were investigated by varying $Cl_2$/($Cl_2$+Ar) gas mixing ratio. The maximum etch rate of $Y_2O_3$ , and the selectivity of $Y_2O_3$ to YMnO$_3$ were 302/min, and 2.4 at $Cl_2$/($Cl_2$+Ar) gas mixing ratio of 0.2 repetitively. In x-ray photoelectron spectroscopy (XPS) analysis, $Y_2O_3$ thin film was dominantly etched by Ar ion bombardment, and was assisted by chemical reaction of Cl radical. These results were confirmed by secondary ion mass spectroscopy(SIMS) analysis. YCl, and $YC_3$ existed at 126.03 a.m.u, and 192.3 a.m.u, respectively.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.21-24
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• 2000

Ferroelectric YMnO$_3$thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$thin films is 285 $\AA$/min under Cl$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$over CeO$_2$and $Y_2$O$_3$are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$film is approximately 65$^{\circ}$and free of residues at the sidewall.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.679-685
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• 2014

For the measurements of surface shape milled using FIB (focused ion beam), the silicon bulk, $Si_3N_4/Si$, and Al/Si samples are used and observed the shapes milled from different sputtering rates, incident angles of $Ga^+$ ions bombardment, beam current, and target material. These conditions also can be influenced the sputtering rate, raster image, and milled shape. The fundamental ion-solid interactions of FIB milling are discussed and explained using TRIM programs (SRIM, TC, and T-dyn). The damaged layers caused by bombarding of $Ga^+$ ions were observed on the surface of target materials. The simulated results were shown a little bit deviation with the experimental data due to relatively small sputtering rate on the sample surface. The simulation results showed about 10.6% tolerance from the measured data at 200 pA. On the other hand, the improved analytical model of damaged layer was matched well with experimental XTEM (cross-sectional transmission electron microscopy) data.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.2
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• pp.262-267
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• 2008

Plasma immersion ion beam (PIIB) nitriding process is an environmentally benign and cost-effective process, and offers the potential of producing high dose of nitrogen ions in a way of simple, fast and economic technique for the high plasma flux treatment of large surface area with nitrogen ion source gas. In this report PIIB nitriding technique was used for nitriding on austenite stainless steel of AISI304 with plasma treatment at $250{\sim}500^{\circ}C$ for 4 hours, and with the working gas pressure of $2.67{\times}10^{-1}$ Pa in vacuum condition. This PIIB process might prove the advantage of the low energy high flux of ion bombardment and enhance the tribological or mechanical properties of austenite stainless steel by nitriding, Furthermore, PIIB showed a useful surface modification technique for the nitriding an irregularly shaped three dimensional workpiece of austenite stainless steel and for the improvement of surface properties of AISI 304, such as hardness and strength

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.151-151
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• 2013

최근 반도체 및 디스플레이 산업에서의 플라즈마 공정의 중요성은 점점 증대되고 있다. 특히, 반도체/LCD 제조공정에서의 Dry Etch공정은 디스플레이용 유리 위에 형성된 산화막, 금속입자, 박막, 및 Polymer와 같은 불순물들을 플라즈마를 이용하여 제거하는 공정이다. 플라즈마 공정을 진행하는 동안 몇 가지 문제점들이 이슈가 되고 있다. Etch공정에서는 활성 부식가스를 많이 사용하고 장시간 플라즈마에 노출되기 때문에, 진공부품들은 플라즈마에 의해서 물리적인 이온충격(Ion Bombardment)과 화학적인 Radical 반응에 의한 부식이 진행된다. 부식영향에 의해 챔버를 구성하고 있는 부품에서 균열이 발생하거나 오염입자들이 떨어져 나오게 된다. 발생한 오염입자들은 산업용 플라즈마 공정에서 매우 심각한 문제가 되고 있다. 본 연구에서는 산화막의 부식 저항특성을 측정할 수 있는 평가방법에 대하여 고찰하였고, 표준화된 데이터로 비교분석할 수 있도록 평가기준과 규정화된 피막평가방법을 연구하였다. 또한, 산화막의 특성에 따른 플라즈마 상태, 오염입자 발생 등 플라즈마 공정을 진단하여 부품재료의 수명을 예측하고, 신뢰성 있는 평가방법에 관한 연구를 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.198-198
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• 2013

Metal-Oxide-Semiconductor (MOS)에서 사용되는 다양한 channel materials로 high electron mobility을 가지는 III-V compound semiconductor가 대두되고 있다 [1,2]. 하지만 이러한 III-V compound semiconductor는 Si에 비해 안정적인 native oxide가 부족하기 때문에 Si, Ge, Al2O3과 BeO 등과 같은 다양한 물질들의 interface passivation layers (IPLs)에 대한 연구가 많이 되고 있다. 이러한 IPLs 물질은 0.5~1.0 nm의 매우 얇은 physical thickness를 가지고 있고 또한 chemical inert하기 때문에 플라즈마 식각에 대한 연구가 되고 있지만 IPLs 식각 후 기판인 III-V compound semiconductor에 physical damage과 substrate recess를 줄이기 위해서 높은 선택비가 필요하다. 이러한 식각의 대안으로 원자층 식각이 연구되고 있으며 이러한 원자층 식각은 반응성 있는 BCl3의 adsorption과 low energy의 Ar bombardment로 desorption으로 self-limited한 one monolayer 식각을 가능하게 한다. 그러므로 본 연구에서는, III-V compound semiconductor 위에 IPLs의 adsorption과 desorption의 cyclic process를 이용한 원자층식각으로 다양한 물질인 SiO2, Al2O3 (self-limited one monolayer etch rate=about 1 ${\AA}$/cycle), BeO (self-limited one monolayer etch rate=about 0.75 ${\AA}$/cycle)를 얻었으며 그 결과 precise한 etch depth control로 minimal substrate recess 식각을 할 수 있었다.

• Journal of Applied Biological Chemistry
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• v.59 no.1
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• pp.19-23
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• 2016

A phenol substance was extracted from Pinus koraiensis Siebold et Zucc leaf extracts and its biological efficacy was measured. The highest content of the phenol substance contained in Pinus koraiensis Siebold et Zucc leaves was 13.5 mg/g, which was obtained when it was extracted with 80% ethanol. At a concentration of 200 mg/mL, the phenolic substances extracted with 80% ethanol and water showed antimicrobial activities against Helicobacter pylori, producing clear zones of 10 and 12 mm diameter, respectively. Pinus koraiensis Siebold et Zucc. leaf extracts were separated using a Sephadex LH-20 column and 4 fractions were obtained (fractions A-D). Fractions C and D showed the greatest inhibitory activity against Helicobacter pylori producing 10.1 and 12.3 mm clear zones, respectively. These two fractions were purified using a Sephadex LH-20 and MCI-gel column ($H_2O{\rightarrow}100%$ ethanol). Purified compounds A and B were identified as syringic acid and compound C was identified as p-coumaric acid based on $^1H$-nuclear magnetic resonance (NMR), $^{13}C$-NMR, and fast atom bombardment mass spectrometry spectra. When two or more purified compounds were mixed, a synergistic effect of anti-Helicobacter pylori activity was evident. This result indicates that extracts of Pinus koraiensis Siebold et Zucc leaves could be considered a functional food because of their high antimicrobial properties.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.1
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• pp.161-166
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• 2004

In this research, TiN films has been grown to the stainless steel substrate by ion beam assisted deposition. TiN film was grown to the nitrogen atmosphere of around $10^{-15}$ Torr with Arion bombardment. The chemical composition, color and adhesion of TiN films were examined as a variation of En(ion energy per atom). The N/Ti ratio increased linearly as the increase of En and saturated around 1.2 at high En. As a results, the bright golden color was obtained when En reached a certain value of Ecn. As a results, the N/Ti ratio is about 0.9.