• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.58-61
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• 2012

In our report a relatively simple process for fast nano-texturing of p-type(100) CZ- silicon surface using silver catalyzed wet chemical etching in aqueous hydrofluoric acid (HF) and hydrogen peroxide solution($H_2O_2$) at room temperature. The wafers were saw-damaged by NaOH(6 wt%) at $60^{\circ}C$ for 150s. To obtain a nano-structured black surface, a thin layer of silver with thickness of 1 - 10 nm was deposited on the surfaces by evaporation system. After this process the samples were etched in HF : $H_2O_2$ : $H_2O$ = 1:5:10 at room temperature for 80s - 220s. Due to the local catalytic of the Ag clusters, this treatment results in the nano-scale texturing on the surface. This resulted in average reflectance values less than 9% after the silver on the surface of the wafers were removed.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.9
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• pp.1020-1025
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• 2012

In this study, we fabricated the superhydrophobic and super-water-repellent surface with the micro/nano scale structures using simple conventional silicon wet-etching technique and the black silicon method by deep reactive ion etching. These fabrication methods are simple but very effective. Also we reported the droplet impact experimental results on the micro/nano-scaled surface. There are two representative impact behaviors as "rebound" and "fragmentation". We found the transition Weber number between "rebound" and "fragmentation" statements, experimentally. Additionally, we concerned about the dimensionless spreading diameters for our super-water-repellent surface. The novel characterization method was introduced for analysis including the "fragmentation" region. As a result, our super-water-repellent surface with the micro/nano-scaled structures shows the different impact behaviors compared with a reference smooth surface, by some meaningful experiments.

• Corrosion Science and Technology
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• v.21 no.6
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• pp.445-453
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• 2022

SiO_x was prepared from a mixture of Si and SiO₂ via high-energy ball milling as a negative electrode material for Li-ion batteries. The molar ratio of Si to SiO₂ as precursors and the milling time were varied to identify the synthetic condition that could exhibit desirable anode performances. With an appropriate milling time, the material showed a unique microstructure in which amorphous Si nanoparticles were intimately embedded within the SiO₂ matrix. The interface between the Si and SiO₂ was composed of silicon suboxides with Si oxidation states from 0 to +4 as proven by X-ray photoelectron spectroscopy and electrochemical analysis. With the addition of a conductive carbon (Super P carbon black) as a coating material, the SiO_x/C manifested superior specific capacity to a commercial SiO_x/C composite without compromising its cycle-life performance. The simple mechanochemical method described in this study will shed light on cost-effective synthesis of high-capacity silicon oxides as promising anode materials.

• Journal of the Korean Chemical Society
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• v.32 no.3
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• pp.267-275
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• 1988

Fine powders of amorphous $Al_2O_3,\;SiO_2,\;Al_2O_3-SiO_2$ system were prepared by hydrolysis of solutions containing alkoxides, aluminium tri-isopropoxide and silicon tetra-ethoxide. High purity ultrafine ${\beta}-sialon$ powders were prepared by the carbothermal reduction-nitridation of amorphous $Al_2O_3-SiO_2$ powders mixed with carbon black as a reducing agent. In the hydrolysis step the effect of the factors such as pH, reaction temperature and amount of water on the conversion rate of alkoxides to oxides was investigated. In the carbothermal reduction-nitridation the reaction path was assumed by the analysis of intermediates formed in the process of ${\beta}-sialon$ synthesis and the reaction kinetics of ${\beta}-sialon$ formation was considered.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.503-510
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• 2002

Silicon carbide candle filters for the pressurized fluidized bed combustion system were fabricated by extrusion process. Carbon black was added to control the porosity. Inorganic additives such as clay and calcium carbonate were added to exhibit appropriate strength. Silicon carbide layer with a finer pore size (mean pore diameter ~$10{\mu}m$) was coated on the silicon carbide support layer (mean pore diameter ~$47{\mu}m$, porosity ∼40%). After that, the filter was sintered at 1400${\circ}C$ in air. We evaluated the filtration performances of the filter at 500${\circ}C$ and $5kgf/cm^2$ of pressure. As a result, high separation efficiency, >99.999% was measured. It is expected that silicon carbide candle filter can be successfully used for the pressurized fluidized bed combustion system.

• Journal of Korea Technology Innovation Society
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• v.14 no.3
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• pp.578-598
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• 2011

This study estimates the value of photovoltaic core material technology, which is getting attention as a clean energy source. The estimation is based on the real option pricing model (ROPM). This study has two main contributions. The first is in the methodology. The process of modeling volatility, which is the most complicated stage in ROPM, is greatly simplified by using the stock price as a covariate representing the volatility of the real option's basic asset. The second contribution is the application of technology. In this study, the economic value of poly-silicon, a core material in the photovoltaic industry and recently surging in demand, is evaluated as a manufacturing technology. In a case study of a company in the photovoltaic industry, the stochastic process of a basic asset follows geometric Brownian motion (GBM), and the option value of firm A's poly-silicon manufacturing technology is estimated at 3.4 trillion won.

• Resources Recycling
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• v.28 no.2
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• pp.54-61
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• 2019

In order to recover pure alumina from black dross, leaching of mechanically activated black dross with NaOH solution resulted in an aluminate solution containing a small amount of Si(IV). Selective adsorption of Si(IV) onto hydrotalcite was investigated from 5 M NaOH solution where the concentration of Al(III) and Si(IV) was 13000 and 150 mg/L, respectively. Only Si(IV) was selectively loaded onto hydrotalcite, while Al(III) remained in the solution. Effect of the calcination treatment of hydrotalcite and concentration of calcined hydrotalcite and NaOH on the loading of Si(IV) was investigated. Although the loading percentage of Si(IV) was low from 5 M NaOH solution, most of the Si(IV) was removed by adjusting the concentration of NaOH by 48 times dilution with water when the concentration of calcined hydrotalcite was higher than 4.5 g/L. The loading of Si(IV) onto calcined hydrotalcite followed Freundlich adsorption isotherm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.2
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• pp.5-12
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• 2000

Uncooled metallic thin-film thermopile infrared detectors have been fabricated, and the figures of merit for the detectors were examined. The hot junctions of a thermopile were prepared on a $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-membrane which acts as a thermal isolation layer, the cold junctions on the membrane supported with the silicon rim which functions as a heat sink, and Au-black was used as an infrared absorber. Infrared absorbance of Au-black, which strongly depends on the chamber pressure during Au-evaporation and its mass per area, was found to be about 90 ％ in the wavelength range from 3${\mu}{\textrm}{m}$ to 14${\mu}{\textrm}{m}$. Voltage responsivity, noise equivalent power, and specific detectivity of Bi-Sb thermopile infrared detector at 5 Hz-chopping frequency were about 10.5V/W, 2.3 nW/Hz$^{1/2}$, 및 $1.9\times10^{7}$ cm.Hz$^{1/2}$/w at room temperature in air, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.837-842
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• 2010

This paper describes the crystallinity, growth rate, and surface morphology of single crystalline 3C-SiC (cubic silicon carbide) thin films grown with several carbonization conditions such as temperature, $C_3H_8$ flow rate, time. In case of carbonization, an increase in the carbonization temperature caused a increase in the size and numbers of unsealed void (big black spot) which decrease the crystallinity. In addition, optimal $C_3H_8$ flow rate made carbonization layer form well and prevented the formation of voids. Also, after a period of time, the growth of carbonization layer did not increase no more. The single crystalline 3C-SiC thin films on optimal carbonized Si substrate showed an improvement on the crystallinity, the growth rate, the roughness, and the carrier concentration.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1139-1146
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• 1995

$\beta$-SiC whiskers could be formed from a system of mullite-carbon-hydrogen by VLS mechanism at elevated temperatures. It was considered that methane gases were generated from the reaction of hydrogen gases with carbon black, and were reacted with mullite to produce two kinds of gases; silicon suboxide (SiO) and carbon monoxide (CO) of precursors of SiC. With increasing the synthesizing temperature up to 146$0^{\circ}C$, the formation of $\beta$-SiC whisker increased from 0.58 mg/$\textrm{cm}^2$ to 3.98 mg/$\textrm{cm}^2$ on the basis of unit area of carbon block, and the diameters of whiskers had their uniformity due to the reduction in stacking faults.