• Korean Chemical Engineering Research
• /
• 제57권3호
• /
• pp.425-431
• /
• 2019

As rechargeable metal-air batteries will be ideal energy storage devices in the future, an active cathode electrocatalyst is required with bi-functionality on both oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) during discharge and charge, respectively. Here, a class of perovskite cathode catalyst with a micro-tubular structure has been developed by controlling bi-functionality from different Ru and Ni dopant ratios. A micro-tubular structure is achieved by the activated carbon fiber (ACF) templating method, which provides uniform size and shape. At the perovskite formula of $LaCrO_3$, the dual dopant system is successfully synthesized with a perfect incorporation into the single perovskite structure. The chemical oxidation states for each Ni and Ru also confirm the partial substitution to B-site of Cr without any changes in the major perovskite structure. From the electrochemical measurements, the micro-tubular feature reveals much more efficient catalytic activity on ORR and OER, comparing to the grain catalyst with same perovskite composition. By changing the Ru and Ni ratio, the $LaCr_{0.8}Ru_{0.1}Ni_{0.1}O_3$ micro-tubular catalyst exhibits great bi-functionality, especially on ORR, with low metal loading, which is comparable to the commercial catalyst of Pt and Ir. This advanced catalytic property on the micro-tubular structure and Ru/Ni synergy effect at the perovskite material may provide a new direction for the next-generation cathode catalyst in metal-air battery system.

• 한국표면공학회지
• /
• 제50권6호
• /
• pp.510-515
• /
• 2017

In this study, a transient liquid phase sintering (TLPS) process of Ag pastes mixed with a fusible metal alloy of Bi58Sn42 with the melting temperature of $138^{\circ}C$, was examined. After screen printing of the Ag pastes with and without Bi58Sn42 powders on polyimide (PI) substrates, the electrodes were heat-treated at different temperatures in the range between 150 and $300^{\circ}C$ for 60 min in air. Comparing the electrical conductivity of the Ag pastes with and without Bi58Sn42 alloy powder after the heat treatment, it was manifested that the low melting temperature alloy definitely played a major role in an increased conductivity when it is added into the Ag pastes by providing more electrical conduction paths between Ag particles. This can be explained by the fact that capillary force of the melts of Bi58Sn42 can contribute to the rearrangement of the Ag particles during the heat-treatment inducing better connectivity between the Ag particles.

• Nano
• /
• 제13권11호
• /
• pp.1850127.1-1850127.13
• /
• 2018

Bi metal deposited on $Bi_2MoO_6$ composite photocatalysts have been successfully synthesized via a simple reduction method at room temperature with using $NaBH_4$ as the reducing agent. The photocatalytic activity of the composite was evaluated by degradation of rhodamine B (RhB) and bisphenol A (BPA) solution under visible light. The rate constant of $Bi/Bi_2MoO_6$ composite to RhB is 10.8 times that of $Bi_2MoO_6$, and the degradation rate constant of BPA is 6.9 times of that of $Bi_2MoO_6$. Nitrogen absorption-desorption isotherm proved that the increase of specific surface area is one of the reasons for the improvement of photocatalytic degradation activity of $Bi/Bi_2MoO_6$ composites. The higher charge transfer efficiency of $Bi/Bi_2MoO_6$ is found through the characterization of the photocurrent and impedance, which are attributed to the surface plasmon resonance (SPR) effect produced by the introduction of the metal Bi monomer in the composite. Free radical capture experiments proved that cavitation is the main active species. Based on the above conclusions, a possible mechanism of photocatalytic degradation is proposed.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 1997년도 춘계학술대회논문집
• /
• pp.140-143
• /
• 1997

The present study is concerned with the hydrostatic extrusion process of copper-clad aluminium bar to investigate the basic flow characteristics. Considering the bonding mechanism of bi-metal contact surface as cold pressure welding, the normal pressure and the contact surface expansion are selected as process parameters governing the bonding condition. The critical pressure required for the bonding at the interface is obtained by solving a "local extrusion" using a slip line meyhod. A viscoplastic finite element method is used to analyze the steady state extrusion process. The boundary profile of bi-metal rod is predicted by tracking a particle path adjacent to interface surface. The variations of contact surface area and the normal pressure along the interface profile are predicted and compared to those by experiments.

• 한국전기전자재료학회논문지
• /
• 제22권5호
• /
• pp.443-447
• /
• 2009

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_{2}Te_{3}$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $5{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_{2}Te_{3}$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_{2}Te_{3}$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ${\mu}m$ is obtained at the temperature difference of 45 K.

• 한국산학기술학회:학술대회논문집
• /
• 한국산학기술학회 2002년도 춘계학술발표논문집
• /
• pp.121-123
• /
• 2002

졸-겔법(Sol-Gel Method)으로 강유전체 Bi/sub 3.3/La/sub 0.7/Ti/sub 3/O/sub 12/(BLT) 박막을 Pt/Ti/SiO₂/Si 기판위에 스핀 코팅하여 Metal-Ferroelectric-Metal(MFM 구조를 형성하였다. As-coated BLT 박막은 650℃ 이상에서 결정화되었으며, 전형적인 Bi층상의 페롭스카이트 결정구조를 나타내었다. 또한 열처리 온도를 증가시킴에 따라 결정성이 향상되었다. 3V 전압에서 650℃로 열처리된 박막의 경우 누설전류가 약 2.25×10/sup -8/A/㎠ 정도를 보였다. 650℃에서 열처리된 BLT박막은 5V의 인가 전압에서 잔류분극 2Pr(±(P/sup */-P/sup A/)) 값은 약 29.5μC/㎠을 나타내었으며, 1.5×10/sup 10/ 스위칭 cycles까지 분극 스위칭을 반복한 후에도 거의 잔류 분극의 변화가 없었다.

• Journal of the Optical Society of Korea
• /
• 제7권2호
• /
• pp.84-88
• /
• 2003

A new method for temperature compensation of fiber Bragg grating (FBG) using hi-metal is proposed and experimentally demonstrated. Bi-metal bends toward the metal of low temperature expansion coefficient as the temperature increases, and this property is utilized to cancel the thermo-optic effect of the fiber. The optimum thickness of the high coefficient metal was empirically found by the trial-and-error method. The temperature sensitivities were 8.1 pm/$^{\circ}C$ and -0.018 pm/$^{\circ}C$ for the uncompensated and compensated FBGs, respectively, which indicates a reduction to a mere 0.22 % of the original sensitivity. No appreciable change in the spectral shape was observed. The packaging technique described in this paper is simple and compact, and it can be used for FBGs in WDM and DWDM communication systems that have stringent requirements on the temperature stability of the components.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.13-15
• /
• 2005

The growth of $Bi_2Te_3$ thin films on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) is discussed in this paper. The results of surface morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The surface morphologies of $Bi_2Te_3$ films were strong1y dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of Te/Bi and deposition temperature. The high Seebeck coefficient (of $-160{\mu}VK^{-1}$) and good surface morphology of our result is promising for $Bi_2Te_3$ based thermoelectric thin film and two dimensional supperlattice device applications.

• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2004년도 추계총회 및 연구발표회 초록집
• /
• pp.81.3-81.3
• /
• 2004

• 한국세라믹학회지
• /
• 제50권3호
• /
• pp.238-243
• /
• 2013

We investigated the effect of Pb-metal filler added to a hybrid paste(PbO-$Bi_2O_3-B_2O_3$-ZnO glass frit and Pb-powder), for joining flip-chip sat lower temperatures than normal. The glass transition temperature was detected at $250^{\circ}C$ and the softening point occurred at $330^{\circ}C$. As the temperature increased, the specific density decreased due to the volatility of the Pb-metal and boron component in the glass. When the glass was heat-treated at $350^{\circ}C$ for 5 min, XRD results revealed a crystalline $Pb_4Bi_3B_7O_{19}$ phase that had been initiated by the addition of Pb-filler in the hybrid paste. The addition of the Pb-metal filler caused are action between the Pb-metal and glass that accelerated the formation of the liquid phase. The liquid phase that formed, promoted bonding between the flip-chip substrate sat lower temperature.