• 한국재료학회지
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• 제19권3호
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• pp.132-136
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• 2009

This study investigates GaAs dry etching in capacitively coupled $BCl_3/N_2$ plasma at a low vacuum pressure (>100 mTorr). The applied etch process parameters were a RIE chuck power ranging from $100{\sim}200W$ on the electrodes and a $N_2$ composition ranging from $0{\sim}100%$ in $BCl_3/N_2$ plasma mixtures. After the etch process, the etch rates, RMS roughness and etch selectivity of the GaAs over a photoresist was investigated. Surface profilometry and field emission-scanning electron microscopy were used to analyze the etch characteristics of the GaAs substrate. It was found that the highest etch rate of GaAs was $0.4{\mu}m/min$ at a 20 % $N_2$ composition in $BCl_3/N_2$ (i.e., 16 sccm $BCl_3/4$ sccm $N_2$). It was also noted that the etch rate of GaAs was $0.22{\mu}m/min$ at 20 sccm $BCl_3$ (100 % $BCl_3$). Therefore, there was a clear catalytic effect of $N_2$ during the $BCl_3/N_2$ plasma etching process. The RMS roughness of GaAs after etching was very low (${\sim}3nm$) when the percentage of $N_2$ was 20 %. However, the surface roughness became rougher with higher percentages of $N_2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.223-223
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• 1999

PZT(PbZr1-xTixO3) 박막은 고유전율과 같은 remanent polarization을 가져서 고집적 소자의 커패시터 유전율층 또는 비휘발성 메모리 소자의 제조에 이용되고 있으나, fatigue 와 aging 문제로 인하여 새로운 물질의 개발이 필요한데, 그 대표적으로 연구되고 있는 것이 PMN-PT(Pb(Mg1/3Nb2/3)O-PbTiO3) 이다. 본 실험에서는 sol-gel 법에 의하여 제조된 PMN-PT막을 ICP(Inductively coupled plasma)에 의하여 식각하였고 mask층으로는 PR을 사용하였다. 식각 가스로는 Ar, Cl, BCl를 단독 또는 혼합하여 사용하였으며, 식각 특성을 보기 위하여 RF Power, Substrate bias, Operation pressure, Substrate temperature를 변화시켰다. 식각속도는 stylus profiler를 이용하여 측정하였고, 단면 profile은 scanning electron microscopy (SEM)를 이용하여 관찰하였다. 식각 메커니즘을 규명하고자 식각된 박막의 표면을 X-ray photoelectron spectroscopy (XPS)로 관찰하였고, optical emission spectroscopy (OES)로 플라즈마 특성을 규명하고자 하였다. 식각속도는 Ar 또는 Cl2 플라즈마에 BCl3 가스를 혼합하였을 경우 증가되었고, BCl3 가스를 단독으로 사용하여도 높은 식각속도를 나타내었으며, BCl3의 첨가량이 늘어날수록 PR의 식각속도는 감소하여 높은 선택비를 보였다. 90% BCl3/10%Cl2 플라즈마에서 2800$\AA$/min의 식각속도 그리고 1.37:1의 PR 선택비를 얻을 수 있었다. Power나 기판 bias 증가에 따라 식각속도는 증가하였으나 기판 온도변화에는 민감하지 않았다. BCl3 rich에서의 식각속도 증가와 선택비 증가는 B2O3의 형성에 의한 것으로 생각된다.

• Molecules and Cells
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• 제37권1호
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• pp.17-23
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• 2014

We already had reported that Bcl-w promotes invasion or migration in gastric cancer cells and glioblastoma multiforme (GBM) by activating matrix metalloproteinase-2 (MMP-2) via specificity protein 1 (Sp1) or ${\beta}$-cateinin, respectively. High expression of Bcl-w also has been reported in GBM which is the most common malignant brain tumor and exhibits aggressive and invasive behavior. These reports propose that Bcl-w-induced signaling is strongly associated with aggressive characteristic of GBM. We demonstrated that Sp1 protein or mRNA expression is induced by Bcl-w using Western blotting or RT-PCR, respectively, and markedly elevated in high-grade glioma specimens compared with low-grade glioma tissues using tissue array. However, relationship between Bcl-w-related signaling and aggressive characteristic of GBM is poorly characterized. This study suggested that Bcl-w-induced Sp1 activation promoted expression of glioma stem-like cell markers, such as Musashi, Nanog, Oct4 and sox-2, as well as neurosphere formation and invasiveness, using western blotting, neurosphere formation assay, or invasion assay, culminating in their aggressive behavior. Therefore, Bcl-w-induced Sp1 activation is proposed as a putative marker for aggressiveness of GBM.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• 생명과학회지
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• 제23권9호
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• pp.1118-1125
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• 2013

감귤류에 많이 함유되어 있는 naringenin은 항암화학요법제로서 중요한 가능성을 가지고 있으나 항암활성에 대한 분자생물학적 기전에 대해서는 명확히 밝혀져 있지 않다. 본 연구에서는 인체 혈구암세포인 U937 세포에서 naringenin이 유발하는 항암효과 및 항암기전을 조사하였다. Naringenin 처리에 의한 U937 세포의 증식억제는 apoptosis 유발과 연관성이 있었으며, 이러한 현상은 caspases 활성화와 밀접한 관련이 있었다. 그러나 pan-caspase inhibitor인 z-VAD-fmk의 선처리에 의하여 U937 세포에서 naringenin이 유발하는 apoptosis가 억제되는 것으로 나타났으므로 caspases가 apoptosis 유발의 중요한 조절자라는 것을 알 수 있었다. 또한 U937 세포에 naringenin을 처리하였을 경우 pro-apoptotic Bcl-2 및 anti-apoptotic Bax의 발현에는 아무런 변화가 나타나지는 않았지만 Bcl-2가 과발현된 U937/Bcl-2 세포에서 naringenin에 의한 apoptosis가 억제되었다. 하지만 small-molecule Bcl-2 inhibitor인 HA14-1 및 naringenin을 같이 처리하였을 경우에는 XIAP 발현감소, Bid 단편화 및 caspase-3 활성화를 통하여 다시 apoptosis가 유발되었다. 따라서 HA14-1 및 naringenin에 의한 apoptosis 상승효과는 death receptor-mediated apoptosis pathway를 경유한다는 것을 제시하는 결과이다.

• 동아시아식생활학회지
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• 제24권6호
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• pp.739-747
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• 2014

본 연구는 인체유방암세포인 MDA-MB-231세포를 이용하여 IDE를 처리하였을 때 세포사멸에 미치는 영향을 세포화학적 방법으로 확인하였다. IDE를 각각 0, 20, 30 및 $40{\mu}g/mL$ 첨가하여 24시간 배양한 후, 세포증식 억제, 막투과성, 세포내 ROS 분석 및 세포사멸 단계의 특성을 FACS 분석하고, RT-PCR에 의한 사멸관련 유전자 중 Bax/Bcl-2 ratio 분석을 통하여 IDE의 항암작용의 조절작용을 밝히고자 하였다. MTT의 세포 증식 억제는 첨가된 IDE의 농도에 따라 유의적으로 감소하였다(p<0.05). 이와 동시에, trypan blue에 대한 염색성과 DCF-DA 형광 분석의 결과는 각각, 막투과성과 세포내 ROS 농도가 모두 농도 의존적으로 증가됨을 보였다(p<0.05). 이와 같은 IDE 농도에 따른 세포화학적 변화 중에서 세포의 초기사멸에서 후기사멸 과정으로 급격한 사멸단계의 변화가 특히, IDE 농도 30과 $40{\mu}g/mL$에서 일어났다. RT-PCR 분석에 의한 Bax/Bcl-2 ratio도 IDE 농도 30과 $40{\mu}g/mL$에서 급격히 증가하였다(p<0.05). 이와 같은 세포화학적 결과와 RT-PCR 결과를 종합해 볼 때, IDE의 유방암세포(MDA-MB-231)에 대한 세포사멸작용은 막 투과성의 증가와 ROS 증가를 통하여 세포에 점진적인 손상을 일으키며, 이는 세포의 생화학적 변화도 초래하여 세포 증식 억제를 감소시켜, 결국 세포내의 사멸관련 유전자 지표인 Bax/Bcl-2 ratio를 크게 변화시키는 일련의 세포사멸을 점진적으로 유도시켜 항유방암의 효과의 가능성을 제시하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.863-866
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• 1999

(Ba,Sr)$TiO_3$ thin films have attracted groat interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2$/Ar plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage = 600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2, the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is 480$\AA/min$ at 10 % $BCl_3$ adding to $Cl_2$/Ar. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES). The change of Cl, B radical density measured by OES as a function of $BCl_3$ percentage in $Cl_2$/Ar. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2$/Ar. To study on the surface reaction of (Ba,Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion enhancement etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and Tic14 is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about $65\;{\sim}\;70$.

• BMB Reports
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• 제49권1호
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• pp.51-56
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• 2016

Glycogen synthase kinase-3β (GSK-3β) is a serine/threonine protein kinase that is known to mediate cancer cell death. Here, we show that B-cell lymphoma 2 (Bcl-2), an anti-apoptotic protein, is regulated by GSK-3β and that GSK-3β-mediated regulation of Bcl-2 is crucial for mitochondrial-dependent cell death in paclitaxel-stimulated cells. We demonstrate that MCF7 GSK-3β siRNA cells are more sensitive to cell death than MCF7 GFP control cells and that in the absence of GSK-3β, Bcl-2 levels are reduced, a result enhanced by paclitaxel. Paclitaxel-induced JNK (c-Jun N-terminal kinase) activation is critical for Bcl-2 modulation. In the absence of GSK-3β, Bcl-2 was unstable in an ubiquitination-dependent manner in both basal- and paclitaxel-treated cells. Furthermore, we demonstrate that GSK-3β-mediated regulation of Bcl-2 influences cytochrome C release and mitochondrial membrane potential. Taken together, our data suggest that GSK-3β-dependent regulation of Bcl-2 is crucial for mitochondria-dependent cell death in paclitaxel-mediated breast cancer therapy. [BMB Reports 2016; 49(1): 51-56]

• 대한의생명과학회지
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• 제18권4호
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• pp.420-427
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• 2012

Sprague-Dawley (SD) rats were orally administered with NG-nitro-L-arginine methyl ester (L-NAME), which inhibits or blocks the production of nitric oxide from L-arginine in vascular endothelial cells and vessel tissue. We examined the effects of nitric oxide on some physiological changes such as blood pressure and heart rate, and confirms the apoptosis induced by the suppressed nitric oxide activity in the kidney. This study was performed to investigate correlation between the activities of nitric oxide and apoptosis by immunohistochemical changes of apoptotic control proteins with regulated chronic inhibition of nitric oxide. In the kidney from L-NAME-treated group, immunohistochemical reaction to the antigens of apoptosis inhibiting proteins such as bcl-2 and bcl-xL, exhibited a time-dependent reduction. The expression of apoptosis-inhibiting proteins such as bax and p53 increased expression in proportion to the duration of treatment. The most sensitive apoptosis regulating proteins to L-NAME were p53 in stimulation and bcl-2 in inhibition, respectively.