• Journal of Soil and Groundwater Environment
• /
• v.6 no.3
• /
• pp.53-59
• /
• 2001

There is a lot of method to manage the insanitary landfill but vertical cutoff walls have been widespreadly used and were installed into the subsurface to act as a barrier to horizontal groundwater flow, The stabilized material such as specialized cement or mixed soil with additives has been generally applied for the materials of the deep soil mixing barrier in korea. The amount of the stabilized material is dependent on the field conditions, because the mixing ratio of the material and the field soil should achieve a requirement in the coefficient of permeability, lower than 1.0$\times$$10^{7}$cm/sec. This study determined the quantity and optimized function ratio of the stabilized material in the formation process of the mixed barrier that was added with stabilized material on the field soil classified into SW-SC under USCS (Unified Soil Classification System). After that the fly ash and lime were selected as an additives an that could improve the function of the stabilized material and then the method to improve the functional progress in the usage of putting into the stabilized material as an appropriate ratio was studied and reviewed. The author used the flexible-wall permeameter for measuring the permeability and unconfined compressive strength tester for compressive strength, and in the view of environmental engineering the absorption test of heavy metals and leaching test regulated by Korean Waste Management Act were performed. As the results, the suitable mixing ratio of the stabilized material in the deep soil mixing barrier was determined as 13 percent. To make workability easy, the ratio of stabilized material and water was proven to be 1 : 1.5. With the results, the range of the portion of the additives(fly ash : lime= 70 : 30) was proven to be 20-40% for improving the function of the stabilized material, lowering of permeability. In heavy metal absorption assessment of the mixing barrier system with the additives, the result of heavy metal absorption was proved to be almost same with the case of the original stabilized material; high removal efficiency of heavy metals. In addition, the leaching concentration of heavy metals from the leaching test for the environmental hazard assessment showed lower than the regulated criteria.

• Economic and Environmental Geology
• /
• v.37 no.1
• /
• pp.99-106
• /
• 2004

Pollution reduction and/or control technology becomes one of the pressing post-semiconductor research field to lead an advanced industrial structure. Soil/groundwater remediation techniques may act as a core technology which will create many demands on pollution reduction areas. A plenty numbers of abandoned metal mines were left without any remediation action in Korea, and it may be potential sources of heavy metal and As contamination in the ecosystem. In order to bring this soil contamination to a settlement, the emerging soil/groundwater remediation techniques should be introduced. Main research topics in the United States and Europe move towards the clean remediation technology without any secondary impact and the feasible application of developing technique into the field scale study. With these advantages, several soil/groundwater techniques such as electrokinetic soil processing, permeable reactive barrier, stabilization/solidification, biosorption, soil flushing with biosurfactant, bioleaching and phytoremediation will be summarized in this paper.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.305-308
• /
• 2006

Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. For portable applications flexible (or conformable) and rugged displays will be the future. In this paper we outline our progress towards developing such a low power consumption active-matrix flexible OLED $(FOLED^{TM})$ display. We demonstrate full color 100 ppi QVGA active matrix OLED displays on flexible stainless steel substrates. Our work in this area is focused on integrating three critical enabling technologies. The first technology component is based on UDC's high efficiency long-lived phosphorescent OLED $(PHOLED^{TM})$ device technology, which has now been commercially demonstrated as meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active-matrix backplanes, and for this our team are employing PARC's Excimer Laser Annealed (ELA) poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing, and in this device we employ a multilayer thin film Barix encapsulation technology in collaboration with Vitex systems. Drive electronics and mechanical packaging are provided by L3 Displays.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.377-377
• /
• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2009.10a
• /
• pp.53-56
• /
• 2009

Roll forming process is one of important metal processing technology because the process is simple and economical. These days, roll forming process is tried to be employed in manufacturing the circuit board, barrier ribs and solar cell plate for productivity. However, it is difficult to apply to the forming of micro scale or sub-micro scale pattern. In this study, the roll forming processing for the micro scale is designed and analyzed. In this study, the forming of micro pattern for solar cell plate by incremental roll forming process is analyzed. The solar cell plate may have thousands of patterns, and the analysis of forming considering all the patterns is impossible due to the computational costs. In this study, analyses are carried out for various numbers of patterns and the results are compared. It is shown that the analyses results with four row patterns and twelve row patterns are same. So, it is considered that the analysis can be carried out for only four rows of pattern for the design of incremental roll forming process. Also experiment is carried out process that is designed through simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.444-445
• /
• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• Progress in Superconductivity and Cryogenics
• /
• v.5 no.3
• /
• pp.20-22
• /
• 2003

Y$_2$O$_3$ films were pulsed laser deposited on cube textured Ni and Ni-W substrates to be used as a single buffer layer of YBCO coated conductor. Initial deposition of $Y_2$O$_3$ films was performed in a reducing atmosphere, and subsequent deposition was done in the base pressure of the chamber and oxygen atmosphere. The $Y_2$O$_3$ films have a strong cube texture (The full width at half maximum of the ø-scan of $Y_2$O$_3$ was 8.4 which was the same as that of metal substrate) and smooth crack-free microstructure. The biaxially textured YBCO films (The full width at half maximum of the ø-scan was 10.2) pulsed laser deposited on the $Y_2$O$_3$/metal exhibited Tc(R=0) of 86.5K and Jc of 0.7 MA/cm2 at 77K in self field, representing that the $Y_2$O$_3$ single buffer layer is an efficient diffusion barrier of Ni and thus very promising for the achievement of high-Jc YBCO coated conductor.

• Journal of the Korean Ceramic Society
• /
• v.43 no.1 s.284
• /
• pp.33-37
• /
• 2006

For producing the fine ribs structure of plasma display panel, the metal ions of barrier materials during the etching process should be understood on the etching mechanism with etching conditions. Etching was done on bulk glasses of the $BaO_B_2O_3-ZnO$ system with $HNO_3$ solution at $40^{\circ}C$. The surface structure of glasses and ion dissolution were analyzed by ICP (Inductive Coupled Plasma measurement). The structure and surface of the etched bulk glass were investigated by using scanning electron microscopy and nanoindenter. As a result, Ba (3-35 ppm/min) and Zn (2-27 ppm/min) ions as major components were leached in the solution and the leached layers were found to be phosphor-rich surface layers. A decrease of the bridge oxygen and relative increase of non bridge oxygen in the etched glass were found by X-ray photoelectron spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.128-129
• /
• 2008

The annealing effects of $SiO_2/Si_3N_4$ stacked tunneling dielectrics were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_3N_4/SiO_2/Si_3N_4$(NON), $SiO_2/Si_3N_4/SiO_2$(ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS(Metal-Oxide-Semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field and improved electrical characteristics by annealing processes than $SiO_2$ layer.

• Membrane and Water Treatment
• /
• v.6 no.5
• /
• pp.393-409
• /
• 2015

Zinc and lead pollution are public environmental issues that have attracted lots of attention for a long time. Landfill leachate contains heavy metals, such as Zn(II) and Pb(II), which are usually related to the pollution of groundwater, especially in developing countries. Bentonite has been proven to be effective in enhancing the membrane property of clay, by which landfill liners can have better barrier performance towards the migration of contaminants. In this study, 5% sodium bentonite amended with locally available Fukakusa clay was utilized to evaluate the membrane behavior towards the heavy metals zinc and lead. The chemico-osmotic efficiency coefficient, ${\omega}$, was obtained through Zn(II) and Pb(II) solutions with different concentrations of 0.5, 1, 5, 10, and 50 mM. According to the results, ${\omega}$ continually decreased as the Zn(II) and Pb(II) concentrations increased, which is consistent with the Gouy-Chapman theory. Compared to normal inorganic ions, the membrane behavior towards heavy metal ions was lower. The migration of heavy metal ions was not observed based on experimental results, which can be attributed to the adsorption or ion exchange reaction. The mechanisms of the membrane performance change were discussed with the assistance of XRD patterns, free swelling results, XRF results, and SEM images.