• Solar Energy
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• v.17 no.3
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• pp.51-57
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• 1997

Cu-doped ZnTe thin films have been grown by hot-wall evaporation. The electrical conductivity of the intrinsic ZnTe film was of p-type and as low as $10^{-6}({\Omega}{\cdot}cm)^{-1}$. As the doped Cu concentration was increased, the electrical conductivity was increased. up to $10^2({\Omega}{\cdot}cm)^{-1}$, but the mobility was decreased a little. The heavily doped sample shows the metal-like electrical resistivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.279-283
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• 2016

In this study, we intended to achieve both antibacterial properties and electromagnetic shielding using the Al-doped ZnO (AZO) films. FTS (Facial Target Sputtering) magnetron sputtering was used for the AZO thin films instead of the conventional RF sputtering because the FTS sputtering could avoid the damage for the plasma as well as fabrication of thin films with a high quality. The 300-nm thick AZO thin films grown on glass substrate showed a resistivity of about $7{\times}10^{-4}{\Omega}-cm$ and a transmittance of about 90% at a wavelength of 550 nm. AZO thin films were investigated for the electromagnetic shielding effectiveness measured by 2-port network method at 1.5 ~ 3 GHz. The AZO (300 nm)/glass films showed an EMI shielding effectiveness of approximately 27 dB. An antibacterial effect was measured by the film attachment method (JIS Z 2801). The percent reductions of bacteria by AZO films were 99.99668% and 99.99999% against Staphylococcus aureus and Escherichia coli, respectively.

• Journal of Magnetics
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• v.21 no.1
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• pp.61-64
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• 2016

In this study, we report the as-prepared MgO-doped $BaFe_{12}O_{19}$, which was prepared by calcination technique and high-energy ball milling process, as an electromagnetic wave absorber. The phase analysis of $BaFe_{12}O_{19}$ and the as-prepared MgO-doped $BaFe_{12}O_{19}$ was detected utilizing X-ray Diffractometer (XRD). The microstructure was characterized using Scanning Electron Microscope (SEM). By means of the transmission/reflection coaxial line method, the electromagnetic properties and microwave absorbing properties of the as-prepared electromagnetic wave absorber were studied. It is found that the electromagnetic wave absorber has a minimum reflection loss value of -41 dB at 4.27 GHz with a matching thickness of 2.6 mm. The experiment results revealed that the as-prepared electromagnetic wave absorber could find potential applications in many military as well as commercial industries.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.4
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• pp.155-160
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• 2019

Diamond Like Carbon (DLC) is a metastable form of amorphous carbon that have superior material properties such as high mechanical hardness, chemical inertness, abrasion resistance, and biocompatibility. Furthermore, its material properties can be tuned by additional doping such as nitrogen or boron. However, either pure DLC or doped DLC show poor adhesion property that makes it difficult to apply contact processing technique. Therefore we propose ultrafast laser micromachining which is non-contact precision process without mechanical degradation. In this study, we developed precision machining process of DLC thin film using an ultrafast laser by investigating the process window in terms of laser fluence and laser wavelength. We have also demonstrated various patterns on the film without generating any microcracks and debris.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.1
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• pp.37-44
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• 2023

Transition metal (Me = Cu, Fe, Ni) doped (Pr, Ba)Co₂O_5+𝛿 (PBCO) material were investigated in terms of electronic structure change and electrochemical properties. It was confirmed that (Pr, Ba)(Co, Cu)O_5+𝛿 (PBCCu) and (Pr, Ba)(Co, Fe)O_5+𝛿 (PBCFe) showed cubic and orthorhombic structures, respectively, but (Pr, Ba)(Co, Ni)O_5+𝛿 (PBCNi) showed secondary phases. PBCCu has an average particle diameter of 1093 nm, and PBCO and PBCFe have an average particle diameter of 495.1 nm and 728 nm, respectively. The average oxidation values of B site ions in PBCMe were calculated to be 3.26 (PBCO), 2.48 (PBCCu), 3.32 (PBCFe), and valence band maximum (VBM) was -0.42 eV (PBCO), -0.58 eV (PBCCu), -0.11 eV (PBCFe). It is expected that PBCCu easily interacts with adsorbed oxygen due to the lowest oxidation value and the highest VBM. The polarization resistance was 0.91 Ω cm² (PBCO), 0.77 Ω cm² (PBCCu), 1.06 Ω cm² (PBCFe) at 600℃, showing the lowest polarization resistance of PBCCu.

• Journal of Surface Science and Engineering
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• v.57 no.1
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• pp.1-7
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• 2024

The study investigated the impact of substrate pretreatment on depositing high-quality B-doped diamond (BDD) thin films using the HFCVD method. Films were deposited on Si and Nb substrates after sanding and seeding. Despite identical sanding conditions, BDD films formed faster on Nb due to even diamond seed distribution. Post-deposition, film average roughness (R_a) remained similar to substrate R_a, but higher substrate R_a led to decreased crystallinity. Nb substrate with 0.83 ㎛ R_a exhibited faster crystal growth due to dense, evenly distributed diamond seeds. BDD film on Nb with 0.83 ㎛ R_a showed a wide, stable potential window (2.8 eV) in CV results and a prominent 1332 cm^-1 diamond peak in R_aman spectroscopy, indicating high quality. The findings underscore the critical role of substrate pretreatment in achieving high-quality BDD film fabrication, crucial for applications demanding robust p-type semiconductors with superior electrical properties.

• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.705-710
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• 2015

The fabrication process of thin boron-doped nanocrystalline diamond (B-NCD) microelectrodes on fused silica single mode optical fiber cladding has been investigated. The B-NCD films were deposited on the fibers using Microwave Plasma Assisted Chemical Vapor Deposition (MW PA CVD) at glass substrate temperature of 475 ℃. We have obtained homogenous, continuous and polycrystalline surface morphology with high sp³ content in B-NCD films and mean grain size in the range of 100-250 nm. The films deposited on the glass reference samples exhibit high refractive index (n=2.05 at λ=550 nm) and low extinction coefficient. Furthermore, cyclic voltammograms (CV) were recorded to determine the electrochemical window and reaction reversibility at the B-NCD fiber-based electrode. CV measurements in aqueous media consisting of 5 mM K₃[Fe(CN)₆] in 0.5 M Na₂SO₄ demonstrated a width of the electrochemical window up to 1.03 V and relatively fast kinetics expressed by a redox peak splitting below 500 mV. Moreover, thanks to high-n B-NCD overlay, the coated fibers can be also used for enhancing the sensitivity of long-period gratings (LPGs) induced in the fiber. The LPG is capable of measuring variations in refractive index of the surrounding liquid by tracing the shift in resonance appearing in the transmitted spectrum. Possible combined CV and LPG-based measurements are discussed in this work.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1006-1011
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• 1999

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4$, $CH_4$ and $B_2H_6$. Microstructures and chemical properties of a-SiC:H films grown with varing the volume ratio of $CH_4$ to $SiH_4$ were characterized with various analysis methods including scanning electron microscopy(SEM), X-ray diffractometry(XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy. X-ray photoelectron spectroscopy(XPS), UV absorption spectroscopy and photoconductivity measurements. While Si:H films grown without $CH_4$ showed amorphous state, the addition of $CH_4$ during deposition enhanced the development of a microcrystalline phase. By introducing C atoms into the film, Si-Si and Si--$\textrm{H}_{n}$ bonds of a -Si:H films were gradually replaced by Si-C, C-C, and Si--$\textrm{C}_{n}\textrm{H}_{m}$ bonds. Consequently, the electrical resistivity and optical bandgap of a-SiC:H films were increased with the C concentration in the film.

• Korean Journal of Materials Research
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• v.33 no.1
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• pp.15-20
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• 2023

'Tracers' are bullets that emit light at the backside so that the shooter can see the trajectory of their flight. These light-emitting bullets allow snipers to hit targets faster and more accurately. Conventional tracers are all combustion type which use the heat generated upon ignition. However, the conventional tracer has a fire risk at the impact site due to the residual flame and has a by-product that can contaminate the inside of the gun and lead to firearm failure. To resolve these problems, it is necessary to develop non-combustion-type tracers that can convert heat to luminance, so-called 'thermoluminescence (TL)'. Here, we highly improve the thermoluminescence properties of MgB₄O₇ through co-doping of Dy³⁺+Ce³⁺ and Dy³⁺+Na⁺. The presence of doping materials (Dy³⁺, Ce³⁺, Na⁺) was confirmed by XPS (X-ray photoelectron spectroscopy). The as-synthesized co-doped MgB₄O₇ was irradiated with a specific radiation dose and heated to 500 ℃under dark conditions. Different thermoluminescence characteristics were exhibited depending on the type or amounts of doping elements, and the highest luminance of 370 cd/m² was obtained when Dy 10 % and Na 5 % were co-doped.