Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Study on the growth of boron-doped diamond films in relation to pretreatment processes

전처리 공정에 따른 보론 첨가 다이아몬드 박막의 성장 거동

  • Mi Young You (The Institute of Materials Technology, Pusan National University) ;
  • Song Hyeon Lee (Department of Materials Science and Engineering, Pusan National University) ;
  • Pung-Keun Song (Department of Materials Science and Engineering, Pusan National University)
  • 유미영 (부산대학교 소재기술연구소) ;
  • 이송현 (부산대학교 재료공학과) ;
  • 송풍근 (부산대학교 재료공학과)
  • Received : 2024.02.21
  • Accepted : 2024.02.26
  • Published : 2024.02.29
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Abstract

The study investigated the impact of substrate pretreatment on depositing high-quality B-doped diamond (BDD) thin films using the HFCVD method. Films were deposited on Si and Nb substrates after sanding and seeding. Despite identical sanding conditions, BDD films formed faster on Nb due to even diamond seed distribution. Post-deposition, film average roughness (Ra) remained similar to substrate Ra, but higher substrate Ra led to decreased crystallinity. Nb substrate with 0.83 ㎛ Ra exhibited faster crystal growth due to dense, evenly distributed diamond seeds. BDD film on Nb with 0.83 ㎛ Ra showed a wide, stable potential window (2.8 eV) in CV results and a prominent 1332 cm-1 diamond peak in Raman spectroscopy, indicating high quality. The findings underscore the critical role of substrate pretreatment in achieving high-quality BDD film fabrication, crucial for applications demanding robust p-type semiconductors with superior electrical properties.

Keywords

Acknowledgement

이 논문은 부산대학교 기본연구지원사업(2년)에 의하여 연구되었음.

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