Electrical Properties of ZnTe:Cu Films Grown by Hot-Wall Evaporation

열벽 증착(hot-wall evaporaton) 방법으로 성장한 ZnTe:Cu 박막의 전기적 특성

  • Park, S.G. (Department of Physics, Chungnam National University) ;
  • Nam, S.G. (Department of Physics, Chungnam National University) ;
  • O, B.S. (Department of Physics, Chungnam National University) ;
  • Lee, K.S. (Department of Physics, Chungnam National University)
  • Published : 1997.09.30

Abstract

Cu-doped ZnTe thin films have been grown by hot-wall evaporation. The electrical conductivity of the intrinsic ZnTe film was of p-type and as low as $10^{-6}({\Omega}{\cdot}cm)^{-1}$. As the doped Cu concentration was increased, the electrical conductivity was increased. up to $10^2({\Omega}{\cdot}cm)^{-1}$, but the mobility was decreased a little. The heavily doped sample shows the metal-like electrical resistivity.

열벽 증착(hot-wall evaporation)방법으로 Cu를 첨가한 ZnTe박막을 성장하였다. doping을 하지 않은 ZnTe박막의 전기 전도형은 p-형으로 전기 전도도는 $10^{-6}({\Omega}{\cdot}cm)^{-1}$을 정도로 매우 낮았다. 첨가한 Cu의 양에 따라 전기 전도도는 $10^2({\Omega}{\cdot}cm)^{-1}$까지 증가하였으나 이동도는 크게 변하재 않았다. Cu를 매우 많이 첨가한 경우는 금속과 같은 전기 전도도를 관찰하였다.

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