• Title/Summary/Keyword: Avalanche

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Full-Round Differential Attack on the Original Version of the Hash Function Proposed at PKC'98 (PKC'98에 제안된 해쉬 함수의 Original Version에 대한 전체 라운드 차분 공격)

  • 장동훈;성재철;이상진;임종인;성수학
    • Journal of the Korea Institute of Information Security & Cryptology
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    • v.12 no.2
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    • pp.65-76
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    • 2002
  • Shin et al. proposed the new hash function with 160-bit output length at PKC'98. This hash function is based on the advantages of the existing hash functions, such as SHA-1, RIPEMD-160, HAVAL, and etc.$^{[1]}$ Recently, Han et al. cryptanalyzed the hash function proposed at PKC'98 and proposed the method finding a collision pair with $2^{-30}$ probability at FSE 2002, supposing that boolean functions satisfy SAC(Strict Avalanche Criterian).$^{[2]}$ This paper improves the method and shows that we can find a collision pair from the original version of the hash function with $2^{-37.13}$ probability through the improved method. And we point out that the problem of the function comes from shift values dependent on message.

Analysis of Quenching Resistor Effect to Improve Stability of TIA Circuit for APD (APD용 TIA 회로의 안정성 개선을 위한 Quenching 저항 영향 분석)

  • Ki, Dong-Han;Jin, Yu-Rin;Kim, Sung-Mi;Cho, Seong-Ik
    • Journal of IKEEE
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    • v.26 no.3
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    • pp.373-379
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    • 2022
  • In this paper, since the APD(Avalanche Photo Diode) for LTV(Light to Voltage) conversion uses a high voltage in the operating range unlike other PD(Photo Diode)s, the quenching resistor must be connected in series to prevent overcurrent when using the TIA(Transimpedance Amplifier). In such a case, quenching resistance may affect the transfer function of the TIA circuit, resulting in serious stability. Therefore, in this paper, by analyzing the effect of APD quenching resistance on the voltage and current loop transfer function of TIA, we propose a loop analysis and a method for determining the quenching resistance value to improve stability. TIA circuit with quenching resistance was designed by the proposed method and the stability of operation was verified through simulation and chip fabrication.

Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices

  • Wei, Guannan;Liang, Yung C.;Samudra, Ganesh S.
    • Journal of Power Electronics
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    • v.12 no.1
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    • pp.19-23
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    • 2012
  • This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.

Compact 2.5 Gb/s Burst-Mode Receiver with Optimum APD Gain for XG-PON1 and GPON Applications

  • Kim, Jong-Deog;Le, Quan;Lee, Mun-Seob;Yoo, Hark;Lee, Dong-Soo;Park, Chang-Soo
    • ETRI Journal
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    • v.31 no.5
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    • pp.622-624
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    • 2009
  • This letter presents a compact 2.5 Gb/s burst-mode receiver using the first reported monolithic amplifier IC developed with 0.25 ${\mu}m$ SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next-generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream.

Characterization of Hot Carrier Mechanism of Nano-Scale CMOSFETs (나노급 소자의 핫캐리어 특성 분석)

  • Na Jun-Hee;Choi Seo-Yun;Kim Yong-Goo;Lee Hi-Deok
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.327-330
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    • 2004
  • It is shown that the hot carrier degradation due to enhanced hot holes trapping dominates PMOSFETs lifetime both in thin and thick devices. Moreover, it is found that in 0.13 ${\mu}m$ CMOSFET the PMOS lifetime under CHC (Channel Hot Carrier) stress is lower than the NMOSFET lifetime under DAHC (Drain Avalanche Hot Carrier) stress. Therefore. the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method and highly necessary to enhance overall device lifetime or circuit lifetime in upcoming nano-scale CMOS technology.

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A DLRF(Diode Laser Range Finder) Using the Cumulative Binary Detection Algorithm (레이저 다이오드를 이용한 이진 신호누적 방식의 거리측정기 기술)

  • Yang, Dong-Won
    • Journal of the Korea Institute of Military Science and Technology
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    • v.10 no.4
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    • pp.152-159
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    • 2007
  • In this paper, a new design technique on the LRF which is useful for low power laser and a CBDA(Cummulative Binary Detection Algorithm) is proposed. The LD(Laser Diode) and Si-APD(Silicon Avalanche Photo Diode) are used for saving a power. In order to prove the detection range, the Si-APD binary data are accumulated before the range computation and the range finding algorithm. A prototype of the proposed DLRF(Diode Laser Range Finder) system was made and tested. An experimental result shows that the DLRF system have the same detection range using a less power(almost 1/32) than an usual military LRF. The proposed DLRF can be applied to the Unmanned Vehicles, Robot and Future Combat System of a tiny size and a low power LRF.

Current distribution among the strands in superconducting multistrands (교류용초전도연면중(交流用超電導撚綿中)의 각소선간전류분류(各素線間電流分流))

  • Oh, Bong-Hwan;Hayakawa, Naoki;Okubo, Hitoshi;Kito, Yukio
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.765-767
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    • 1992
  • A superconducting multistranded cable is used to realize high current capacity for AC use. The critical current value of the cable to be less than the simple summation of individual critical current value of each strand. The causes for such a degradation of the critical current value have not been revealed. This paper investigates the current distribution in multistrands before and after their quenching by using 7-strand superconducting cable. The following experimental results are derived. (1)The quenching is initiated at one strand in the cable, (2)The current in the quenched strand is transferred into the other strands, (3) An avalanche of quenching is induced among the strands, (4)The central strand is quenched finally among the strands.

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A Block Cipher Algorithm based on Cellular Automata (셀룰라 오토마타를 이용한 블록 암호 알고리즘)

  • 이준석;장화식;이경현
    • Journal of Korea Multimedia Society
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    • v.5 no.6
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    • pp.665-673
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    • 2002
  • In this paper, we introduce cellular automata and propose a new block cipher algorithm based on cellular automata. For the evaluation of performance and security, we compare the results of the proposed algorithm with them of the standard block ciphers such as DES, Rijndael regarding on avalanche effects and processing time, and analyze the differential cryptanalysis for a reduction version of the proposed algorithm. In addition, we perform the statistical tests in FIPS PUB 140-2(Federal Information Processing Standards Publication 140-2) for the output bit sequences of proposed algorithm to guarantee the randomness property.

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128-Bit Chaotic Block Encryption Scheme Using a PLCM (PLCM을 이용한 128비트 카오스 블록 암호화 기법)

  • Lee, Sung-Woo;Lee, Min-Goo;Park, Jeong-Yeol;Shin, Jae-Ho
    • Journal of The Institute of Information and Telecommunication Facilities Engineering
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    • v.4 no.2
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    • pp.19-27
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    • 2005
  • In this paper, we propose 128-bit chaotic block encryption scheme using a PLCM (Piecewise Linear Chaotic Map) having a good dynamical property. The proposed scheme has a block size of 128- bit and a key size of 128-bit. The encrypted code is generated from the output of PLCM. We show the proposed scheme is very secure against statistical attacks and have very good avalanche effect and randomness properties.

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An Analysis of Insulating Reliability in Epoxy Composites for Molding Materials of PT

  • Yang, Jeong-Yun;Park, Geon-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.09a
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    • pp.43-46
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    • 2001
  • The DC dielectric breakdown of epoxy composites used for transformer was experimented and then its data were simulated by Weibull distribution equation in this study. The more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical, and the breakdown strength of specimens with filler was lower than it of non-filler specimens because it was believed that the adding filler formed interface, charges were accumulated in it, the molecular mobility was raised, the electric field was concentrated, electrons were accelerated and then electron avalanche was early accomplished. From the analysis of Wei bull distribution equation, it was confirmed that as the allowed breakdown probability was· given by 0.1[%], the value of 'applied field was needed to be under 17.20[kV/mm].

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