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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Compact 2.5 Gb/s Burst-Mode Receiver with Optimum APD Gain for XG-PON1 and GPON Applications

  • Received : 2009.05.26
  • Accepted : 2009.07.22
  • Published : 2009.10.31
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Abstract

This letter presents a compact 2.5 Gb/s burst-mode receiver using the first reported monolithic amplifier IC developed with 0.25 ${\mu}m$ SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next-generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream.

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References

  1. IEEE 802.3av Task Force, http://www.ieee802.org/3/av/.
  2. FSAN NG-PON Task Group, http://www.fsanweb.org/ ngpon.asp.
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  4. S. Nishihara et al., “10.3 Gbit/s Burst-Mode PIN-TIA Module with High Sensitivity, Wide Dynamic Range and Quick Response,” Electron. Lett., vol. 44, no. 3, Jan. 2008, pp. 222-223. https://doi.org/10.1049/el:20082532
  5. ITU-T Std. G.984.2, Gigabit-Capable Passive Optical Networks (GPON), ITU-T, Mar. 2003.
  6. Q. Le et al., “2.5Gb/s GPON Single-Chip Burst-Mode Receiver,” Proc. ECOC, vol. 5, Sept. 2008, p. 119-120.
  7. M. Nakamura et al., “1.25-Gb/s Burst-Mode Receiver ICs with Quick Response for PON Systems,” IEEE J. Solid-State Circuits, vol. 40, no. 12, Dec. 2005, pp. 2680-2688. https://doi.org/10.1109/JSSC.2005.856582

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