• Korean Journal of Materials Research
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• v.18 no.1
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• pp.45-50
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• 2008

Microstructural evolution and the intermetallic compound (IMC) growth kinetics in an Au stud bump were studied via isothermal aging at 120, 150, and $180^{\circ}C$ for 300hrs. The $AlAu_4$ phase was observed in an Al pad/Au stud interface, and its thickness was kept constant during the aging treatment. AuSn, $AuSn_2,\;and\;AuSn_4$ phases formed at interface between the Au stud and Sn. $AuSn_2,\;AuSn_2/AuSn_4$, and AuSn phases dominantly grew as the aging time increased at $120^{\circ}C,\;150^{\circ}C,\;and\;180^{\circ}C$, respectively, while $(Au,Cu)_6Sn_5/Cu_3Sn$ phases formed at Sn/Cu interface with a negligible growth rate. Kirkendall voids formed at $AlAu_4/Au$, Au/Au-Sn IMC, and $Cu_3Sn/Cu$ interfaces and propagated continuously as the time increased. The apparent activation energy for the overall growth of the Au-Sn IMC was estimated to be 1.04 eV.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.55-61
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• 2010

The device with tantalum silicide heater were bonded by Ag paste and Au SBB(Stud Bump Bonding) onto the Au coated substrate. The shear test after Au ABB and the thermal performance under current stressing were measured. The optimum condition of Au SBB was determined by fractured surface after die shear test and $350^{\circ}C$ for substrate, $250^{\circ}C$ for die during flip chip bonding with bonding load of about 300 g/bump. With applying 5W through heater on the device, the maximum temperature with Ag paste bonding was about $50^{\circ}C$. That with Au SBB on Au coated Si substrate showed $64^{\circ}C$. The difference of maximum temperatures is only $14^{\circ}C$, even though the difference of contact area between Ag paste bonding and Au SBB is by about 300 times and the simulation showed that the contact resistance might be one of the reasons.

• Journal of Welding and Joining
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• v.29 no.6
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• pp.65-70
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• 2011

The effect of flip chip bonding parameters on formation of intermetallic compounds (IMCs) between Au stud bumps and Sn-3.5Ag solder was investigated. In this study, flip chip bonding temperature was performed at $260^{\circ}C$ and $300^{\circ}C$ with various bonding times of 5, 10, and 20 sec. AuSn, $AuSn_2$ and $AuSn_4$ IMCs were formed at the interface of joints and (Au, Cu)$_6Sn_5$ IMC was observed near Cu pad side in the joint. At bonding temperature of $260^{\circ}C$, $AuSn_4$ IMC was dominant in the joint compared to other Au-Sn IMCs as bonding time increased. At bonding temperature of $300^{\circ}C$, $AuSn_2$ IMC clusters, which were surrounded by $AuSn_4$ IMC, were observed in the solder joint due to fast diffusivity of Au to molten solder with increased bonding temperature. Bond strength of Au stud bump joined with Sn-3.5Ag solder was about 23 gf/bump and fracture mode of the joint was intergranular fracture between $AuSn_2$ and $AuSn_4$ IMCs regardless bonding conditions.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.197-201
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• 2013

This paper describes the fabrication and characterization of graphene based carbon dioxide ($CO_2$) gas sensors. Graphene was synthesized by thermal decomposition of SiC. The resistivity $CO_2$ gas sensors were fabricated by pure graphene and graphene decorated Au nanoparticles (NPs). The Au NPs with size of 10 nm were decorated on graphene. Au electrode deposited on the graphene showed Ohmic contact and the sensors resistance changed following to various $CO_2$ concentrations. Resulting in resistance sensor using pure graphene can detect minimum of 100 ppm $CO_2$ concentration at $50^{\circ}C$, whereas Au/graphene can detect minimum 2 ppm $CO_2$ concentration at same at $50^{\circ}C$. Moreover, Au NPs catalyst improved the sensitivity of the graphene based $CO_2$ sensors. The responses of pure graphene and Au/graphene are 0.04% and 0.24%, respectively, at $50^{\circ}C$ with 500 ppm $CO_2$ concentration. The optimum working temperature of $CO_2$ sensors is at $75^{\circ}C$.

• Progress in Superconductivity and Cryogenics
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• v.12 no.3
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• pp.7-11
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• 2010

For many large-scale applications of high-temperature superconducting materials, large critical current density($J_c$) in high applied magnetic fields are required. A number of methods have been reported to introduce artificial pinning centers(APCs) in $YBa_2Cu_3O_{7-\delta}$(YBCO) films for enhancement of their $J_c$. In this work, we investigated electric characteristic of YBCO films on $SrTiO_3$ (100) substrates whose surfaces were modified by the introduction of Au nanoparticles (AuNPs). Au nanoparticles were uniformly dispersed on STO substrates with one of typical solution techniques, self assembled monolayer. After heating the STO substrates with Au nanoparticles, the size of Au nanoparticles was around 29~32 nm in height and 41~49 nm in diameter. XRD diffraction patterns taken on the YBCO film with Au nanoparticles show the c-axis orientation. The measured $T_c$ of YBCO /AuNPs films was around 89K and the $J_c$ was 0.75 MA/$cm^2$ at 65 K and 1 T.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.2
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• pp.78-84
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• 2024

The electrochemical reduction of carbon dioxide (CO₂) is gaining attention as an effective method for converting CO₂ into high-value carbon compounds. This paper reports a facile meth od for synth esizing and characterizing g-C₃N₄-modified porous Au (pAu) electrodes for electrochemical CO₂ reduction using e-beam deposition and anodization techniques. The fabricated pAu@g-C₃N₄ electrode (@ -0.9 VRHE) demonstrated superior electrochemical performance compared to the pAu electrode. Both electrodes exhibited a Faradaic efficiency (FE) of 100% for CO production. The pAu@g-C₃N₄ electrode achieved a maximum CO production rate of 9.94 mg/s, which is up to 2.2 times higher than that of the pAu electrode. This study provides an economical and sustainable approach to addressing climate change caused by CO₂ emissions and significantly contributes to the development of electrodes for electrochemical CO₂ reduction.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.77-84
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• 2006

Surface roughness and wafer-level thickness distribution of the non-cyanide Au bumps were characterized with variations of the electroplating current density and the bath temperature. The Au bumps, electroplated at $3mA/cm^{2}\;and\;5mA/cm^{2}$, exhibited the surface roughness of $80{\sim}100nm$ without depending on the bath temperature of $40^{\circ}C\;and\;60^{\circ}C$. The Au bumps, electroplated with $8mA/cm^{2}$ at $40^{\circ}C\;and60^{\circ}C$, exhibited the surface roughness of 800nm and $80{\sim}100nm$, respectively. Wafer-level thickness deviation of the Au bumps became larger with increasing the current density from $3mA/cm^{2}\;to\;8mA/cm^{2}$. More uniform thickness distribution of the Au bumps was obtained at a bath temperature of $60^{\circ}C$ than that of $40^{\circ}C$.

• Journal of Technologic Dentistry
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• v.25 no.1
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• pp.63-70
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• 2003

The microstructure and hardness of a porcelain fused Au-Pt-Cu-In alloy was investigated using optical microscopy, secondary electron microscopy, electron probe microanalyzer, transmission electron microscope, and vickers hardness. The hardness of the heat-treated Au-Pt-Cu-In quartenary alloy reached a maximum value in 30 min at 550$^{\circ}C$ in the range of 150 to 950$^{\circ}C$. In the aged Au-Pt-Cu-0.5In alloy at 550$^{\circ}C$, the hardness of the alloy rapidly increased until 30min with increasing aging time and after that it was remained nearly constant value. Based on above results, glazing and final aging of the porcelain fused Au-Pt-Cu-0.5In alloy were performed at 920 and 550$^{\circ}C$, respectively. The hardness of Au-Pt-Cu-0.5In alloy glazed at 920$^{\circ}C$ was 90 Hv and that of the alloy aged for 30 min at 550$^{\circ}C$ increased to 160 Hv. This indicates that a ceramic-metal crown with high strength can be manufactured using the glazing at 920$^{\circ}C$ and followed final aging at 550$^{\circ}C$ for 30 min.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.100-105
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• 1992

Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) analyses have been performed on double-structured Au/V and Au/Ti thin films after heat treatment at 500$^{\circ}$C in air. V- and Tiunderlays sandwiched between gold thin films and SiOz substrates form oxides on the free surface of gold films during the heat treatment. The chemical compositions of the oxides were identified as V205 and TiOz in Au/V and Au/Ti thin films, respectively.

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1133-1137
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• 2011

Ordered array of gold nanoparticles (Au NPs) over ITO glass was investigated in terms of ITO pretreatment, particle size, and diamines with different chain length. Owing to the indium-tin-oxide (ITO) layer coated on the glass, the substrate surface has a limited number of hydroxyl groups which can produce functionalized amine groups for Au binding, which resulted in the loosely-packed array of Au NPs on the ITO surface. Diamine ligand as a molecular linker was introduced to enhance the lateral binding of adjacent Au NPs immobilized on the amine-functionalized ITO glass, consequently leading to the densely-packed array of Au NPs over the ITO substrate. The molecular bridging effect was strengthened with the increase of chain length of diamines: C-12 > C-8. The packing density of small Au NPs (< 40 nm) was significantly increased with the increase of C-8 diamine, but large Au NPs (> 60 nm) did not produce densely-packed array on the ITO glass even for the dosage of C-12 diamine.