• Analytical Science and Technology
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• v.6 no.2
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• pp.217-223
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• 1993

Thin films of the Au/Cr, Au/Ni/Cr and Au/Pd/Cr systems were deposited on alumina substrates at ambient temperature and $250^{\circ}C$ in a high-vacuum resistance heating evaporator and annealed at $300^{\circ}C$, $450^{\circ}C$ and $600^{\circ}C$ for 1 hour in air, respectively. The film thicknesses of Au, Ni(or pd), and Cr were $1000{\AA}$, $300{\AA}$, and $50{\AA}$, respectively. The substrate temperature during deposition and the post-deposition annealing temperature affected the sheet resistance of thin-films due to the inter-diffusion of each layer. As a result of Auger depth profile analysis, in the Au/Cr system Cr already diffused out to Au surface during deposition at the substrate temperature of $250^{\circ}C$ and Au distribution changed after heat treatment. In the Au/Ni/Cr and Au/Pd/Cr systems, diffusion phenomena of Ni and Pd were found and especially Ni (approximately 45 at.%) diffused out to Au surface and oxidized.

• Advances in nano research
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• v.12 no.1
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• pp.25-35
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• 2022

Within the framework of the density functional theory combined with the method of non-equilibrium Green's functions (DFT + NEGF), the features of electron transport in fullerene nanojunctions, which are «core-shell» nanoobjects made of a combination of fullerenes of different diameters C₂₀, C₈₀, C₁₈₀, placed between gold electrodes (in a nanogap), are studied. Their transmission spectra, the density of state, current-voltage characteristics and differential conductivity are determined. It was shown that in the energy range of -0.45-0.45 eV in the transmission spectrum of the "Au-C₁₈₀-Au" nanojunction appears a HOMO-LUMO gap with a width of 0.9 eV; when small-sized fullerenes C₂₀, C₈₀ are intercalation into the cavity C₁₈₀ the gap disappears, and a series of resonant structures are observed on their spectra. It has been established that distinct Coulomb steps appear on the current-voltage characteristics of the "Au-C₁₈₀-Au" nanojunction, but on the current-voltage characteristics "Au-C₈₀@C₁₈₀-Au", "Au-(C₂₀@C₈₀)@C₁₈₀-Au" these step structures are blurred due to a decrease in Coulomb energy. An increase in the number of Coulomb features on the dI/dV spectra of core-shell fullerene nanojunctions was revealed in comparison with nanojunctions based on fullerene C₆₀, which makes it possible to create high-speed single-electron devices on their basis. Models of single-electron transistors (SET) based on fullerene nanojunctions "Au-C₁₈₀-Au", "Au-C₈₀@C₁₈₀-Au" and "Au-(C₂₀@C₈₀)@C₁₈₀-Au" are considered. Their charge stability diagrams are analyzed and it is shown that SET based on C₈₀@C₁₈₀-, (C₂₀@C₈₀)@C₁₈₀- nanojunctions is output from the Coulomb blockade mode with the lowest drain-to-source voltage.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.9-15
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• 2008

Microstructure and contact resistance of the Au-Sn solder joints were characterized after flip-chip bonding of the Au/Sn bumps processed by successive electrodeposition of Au and Sn. Microstructure of the Au-Sn solder joints, formed by flip-chip bonding at $285^{\circ}C$ for 30 sec, was composed of the $Au_5Sn$+AuSn lamellar structure. The interlamellar spacing of the $Au_5Sn$+AuSn structure increased by reflowing at $310^{\circ}C$ for 3 min after flip-chip bonding. While the Au-Sn solder joints formed by flip-chip bonding at $285^{\circ}C$ for 30 sec exhibited an average contact resistance of 15.6 $m{\Omega}$/bump, the Au-Sn solder joints reflowed at $310^{\circ}C$ for 3 min after flip-chip bonding possessed an average contact resistance of 15.0 $m{\Omega}$/bump.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.143.1-143.1
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• 2010

고분자 전해질막 연료전지(Polymer Electrolyte Membrane Fuel Cell; PEMFC)는 수소를 이용하여 전기를 발생시키는 친환경적이고 이상적인 발전장치로 고효율과 높은 전류밀도를 가지며 그 응용분야가 다양하다. 저온에서 작동하는 PEM fuel cell은 전극에서 효과적인 산화환원반응을 위해 그 촉매로 활성이 우수한 Pt(Platinum)을 사용하고 있으나, Pt의 높은 가격은 연료전지의 상용화에 걸림돌이 되고 있다. 본 연구에서는 연료전지의 Pt/C 촉매 층에서 Pt의 분산성을 높여 Pt의 담지량을 줄이고 작동 중 발생하는 Pt의 응집 현상을 방지하여 Pt의 수명을 연장시킬 목적으로, Au(gold) 나노입자를 첨가한 Pt-Au/C 복합나노촉매를 제조하였다. 본 발표에서는 합성된 Pt-Au/C 복합촉매 중 Au 첨가량이 Pt 촉매의 활성에 미치는 영향을 조사하기 위하여, 복합촉매 중에 금속(Pt+Au)의 총 함량이 30 wt.%와 40 wt.% 인 Pt-Au/C 촉매에 대하여 각각 Au 첨가량을 변화시켜, cyclic voltammetry 법에 의해 Au 첨가 효과를 조사한 결과에 대하여 보고하고자 한다. Au 나노입자를 제조하기 위한 출발 물질로는 $HAuCl_4{\cdot}4H_2O$를 이용하였고 trisodium citrate와 $NaBH_4$를 환원제로 하여, 입경이 5~8 nm 인 Au 콜로이드를 제조하였다. Pt-Au/C 복합나노촉매를 제조하기 위하여 먼저 Au/C 복합분체가 제조되었다. 0.03g의 carbon이 첨가된 carbon 현탁액에 합성된 Au 콜로이드 수용액을 첨가한 후 24시간 동안 교반하여 Au/C 복합분체를 제조하였다. 이 Au/C 복합분체에 $H_2PtCl_6{\cdot}6H_2O$ 수용액을 현탁하고 methanol 을 환원제로 사용해 Pt를 환원 석출시켜 Pt-Au/C 복합촉매를 제조하였다. Pt-Au/C 복합 나노촉매에서 Pt와 Au를 다양한 비율(3:1, 2.5:1.5, 2:2)로 합성하였으며 Pt-Au/C 복합촉매 중 금속(Pt+Au) 촉매의 총 함량은 30 wt.%와 40 wt.%로 각각 제조되었다. Au 나노입자 콜로이드의 분산성은 UV-visible spectrum의 흡광도에 의해 관찰되었고, Pt-Au/C 복합 나노촉매의 형상 및 분산성 분석은 transmission electron microscopy(TEM)에 의해 이루어졌다. 또한, 촉매의 전기화학적 특성평가는 cyclic voltammetry(CV)에 의해 조사되었다.

• Journal of Technologic Dentistry
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• v.14 no.1
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• pp.23-43
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• 1992

Corrosion characteristics of four commerial gold-based dental alloys(C-1; Au75%, Ag13.9%, Pd3%, Cu & etc.,8.1%, C-2 ;Au 52.08, Ag 24%, Pd 5%, Cu & etc.,18.92, C-3 ; Au 53%, Ag 22%, Pd 5%, Pt 3% Cu & etc.,17%, C-4 ; Au 53%, Pd4, Pt1.5%, Ag & Cu & etc.,41.5%) and four experimental ternary Au-Ag-Cu alloys(E-1 ; Au 50%, Ag 30%, Cu 20%, E-2 ; Au 50%, Ag 20%, Cu 30%, E-3 ; Au 50%, Ag 10%, Cu 40%, E-4 ; Au 50%, Ag 40%, Cu 10%) were investigated by potentiodynamic polarization analysis and the structure was examined by optical microscope and SEM. All corrosion testing was conducted in 1% NaCl solution. The main results are as follows : 1. The corrosion resistence of commercial alloys was decreased in the order of C-1, C-3, C-4, C-2. C-2. 2. The E-1 and E-3 ternary alloys exhibits the higher corrosion resistence than E-2 and E-4 alloys. 3. The cast microstructure of alloys reveals dendrite morphology which shows the significant microsegregation caused by the difference in the diffusion rate between liquid and solid. 4. It is found that the surface corrosion products were mainly AgCl by X-ray diffraction results.

• Electrical & Electronic Materials
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• v.1 no.3
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• pp.251-260
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• 1988

n형 GaAs에 음성접촉을 형성함에 있어서 Au-Ge 공융합금을 용해시키는 alloying 보다는 sintering을 필요로 하는 Su-Pd-Ge계의 새로운 융성접촉을 도입하였다. Au-Pd-Ge계의 최적의 음성조건을 조사하기 위하여 Au/Pd/Ge, Au/Ge/Pd, Au/Pd/Ge/Pd 그리고 Au/Pd/Au/Ge 음성접촉을 제조하였다. 비접촉저항을 조사하는데 있어서 sintering 온도는 390-450.deg.C사이였고 시간은 30초에서 6분 사이였다. Au-Pd-Ge계의 비접촉저항은 alloying된 Au/Pd/Ge 접촉의 그것에 필적할 만큼 낮았으며 특히 Au/Ge/Pd 접촉은 430.deg.C, 3분의 sintering 조건에서 가장 낮은 1.2*$10^{-6}$.OMEGA..$cm^{2}$의 비접촉저항을 나타냈다. Au/Ge/Pd 접촉의 표면형상 및 접촉패턴 가장자리는 450.deg.C에서 2분 이상 sintering된 접촉을 제외하고는 sintering 후에 as-deposited 상태와 다를 바가 없었다. 430.deg.C, 3분 sintering에서 가장 낮은 비접촉저항을 나타낸 Au/Ge/Pd 접촉의 비접촉저항은 430.deg.C에서 Ge/Pd 두께 변화에 비교적 변화가 적었다.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.56-63
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• 1995

MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1013-1018
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• 1996

The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.

• Journal of the Korean institute of surface engineering
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• v.50 no.4
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• pp.296-300
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• 2017

NiO nanofibers with Au nanoparticles were synthesized by sol-gel and electrospinning techniques, in which the reduction process by ultraviolet exposure is included for the growth of Au nanoparticles in the electrospinning solution. FE-SEM(Field Emission Scanning Electron Microscopy), TEM(Transmission Electron Microscopy) revealed that the synthesized nanofibers had the diameter of approximately 200 nm. X-ray diffraction showed the successful formation of Au-decorated NiO nanofibers. Gas sensing tests of Au-decorated NiO nanofibers were performed using reducing gases of CO, and $C_6H_6$, $C_7H_8$, $C_2H_5OH$. Compared to as-synthesized NiO nanofibers, the response of Au-loaded NiO nanofibers to CO gas was found to be about 3.4 times increased. On the other hand, the response increases were only 1.1-1.3 times for $C_6H_6$, $C_7H_8$, and $C_2H_5OH$.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.87-93
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• 2005

Interfacial reactions between 48Sn-52In solder and $0.1{\mu}m$ Ti/3 ${\mu}m$ Cu/Au under bump metallurgies(UBM) with various Au thickness of $0.1{\~}0.7{\mu}m$ have been investigated after solder reflow at $150^{\circ}C,\;200^{\circ}C$, and $250^{\circ}C$ for 1 minute. Ball shear strength and shear energy of the Sn-52In solder bump on each UBM was also evaluated. With reflowing at $150^{\circ}C$ and $200^{\circ}C$, $Cu_6(Sn,In)_5$ and $AuIn_2$ intermetallic compounds were formed at UBW solder interface. However, UBM was consumed almost completely with reflowing at $250^{\circ}C$. While ball shear strength was not consistent with UBM/solder reactions, ball shear energy matched well with UBM/solder reactions.