• Transactions on Electrical and Electronic Materials
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• 제3권3호
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• pp.21-24
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• 2002

Two kinds of $Nd_{1+X}Ba_{2-X}Cu_3O_{7-{\delta}}$, the sintering samples and zone melting samples, were heat-treated under pure Ar at 950$^{circ}C$. The substitution of Nd ion for Ba ion in the $Nd_{1+X}Ba_{2-X}Cu_3O_{7-{\delta}}$ before and after the heat treatment was investigated by XRD. In order to confirm the effects of the heat treatment, the Tc and Jc of samples with/without the heat treatment under Ar were comparatively studied. $Nd_{1+X}Ba_{2-X}Cu_3O_{7-{\delta}}$ samples were oxygenated under pure oxygen at $300^{circ}C$. From the XRD pattern it was found that the sample with x<0.4 was transferred from tetragonal phase to orthorhombic phase after the oxygenation, while the sample with x>0.4 did not show the phase transition even after a long time oxygenation. Therefore, the low oxygen partial pressure (Ar+1 % O$_2$) was used for the ambient atmosphere of the zone-melting samples, which could reduce the melting temperature and depress the substitution of Nd for Ba. After the improvement in the zone-melting process, the Jc value was increased to 2 x $10^4$A/$cm^2$ (0 T, 78 K). The particle orientation and the structure of zone-melted NdBaCuO were studied by the XRD and SEM analysis.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.795-800
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• 2008

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.

• 한국분말재료학회지
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• 제17권1호
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• pp.13-22
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• 2010

The unique features of spark plasma sintering process are the possibilities of a very fast heating rate and a short holding time to obtain fully dense materials. $\beta$-SiC powder with 0, 2, 6, 10 wt% of $\alpha$-SiC particles (seeds) and 4 wt% of Al-B-C (sintering aids) were spark plasma sintered at $1700-1850^{\circ}C$ for 10 min. The heating rate, applied pressure and sintering atmosphere were kept at $100^{\circ}C/min$, 40 MPa and a flowing Ar gas (500 CC/min). Microstructural development of SiC as function of seed content and temperature during spark plasma sintering was investigated quantitatively and statistically using image analysis. Quantitative image analyses on the sintered SiC ceramics were conducted on the grain size, aspect ratio and grain size distribution of SiC. The microstructure of SiC sintered up to $1700^{\circ}C$ consisted of equiaxed grains. In contrast, the growth of large elongated SiC grains in small matrix grains was shown in sintered bodies at $1750^{\circ}C$ and the plate-like grains interlocking microstructure had been developed by increasing sintering temperature. The introduction of $\alpha$-SiC seeds into $\beta$-SiC accelerated the grain growth of elongated grains during sintering, resulting in the plate-like grains interlocking microstructure. In the $\alpha$-SiC seeds added in $\beta$-SiC, the rate of grain growth decreased with $\alpha$-SiC seed content, however, bulk density and aspect ratio of grains in sintered body increased.

• 한국가스학회지
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• 제24권4호
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• pp.32-38
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• 2020

화학반응기에 발생한 화재·폭발 사고사례를 기반으로 화학반응기에 설치되어 있는 예방조치의 문제점을 분석하였다. 화학반응기는 다품종의 화학제품을 생산하며, 반응폭주시 급격히 상승하는 압력을 해소하기 위해 파열판을 설치하고 파열판의 기능을 유지하기 위해 배출물질을 대기로 배출하도록 허용하고 있어 화재·폭발사고가 발생하였다. 이를 개선하기 위한 방안으로 안전건전성수준(SIL3)을 기반으로 한 안전계장시스템(SIS)을 화학반응기의 예방조치로 적용하였다. 화학반응기의 원재료를 적하하는 배관에 긴급차단밸브를 직렬로 2개 설치하여 반응폭주시 긴급차단밸브 2개 중 1개만 작동하여도 원재료 공급을 차단할 수 있도록 하고, 반응응제제 공급배관에는 자동 ON/OFF 밸브를 병렬로 설치하여 반응폭주시 1개의 밸브만 열려도 반응억제제가 투입될 수 있게 하였다.

• 대한원격탐사학회:학술대회논문집
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• 대한원격탐사학회 2002년도 Proceedings of International Symposium on Remote Sensing
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• pp.750-750
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• 2002

The Airship PKNU is a roughly 12 m (32 ft) long blimp, filled with helium, whose two-gasoline power(3hp per engine) are independently radio controlled. The motors and propellers can be tilted and are attached to the gondola through an axle and supporting braces. Four stabilizing fins are mounted at the tail of the airship. To fill in the helium, a valve is placed at the bottom of the hull. The inaugural flight was on jul. 31.2002 at the Pusan, S.korea Most environment monitoring system\ problem use satellite image. But, Low resolution satellite image (multi-spectral) : 1km ∼ 250 m ground resolutions is lows. So, detail information acquisition is hard at the complex terrain. High resolution satellite image (black and white) 30m : The ground resolution is high. But it is high price, visit cycle and delivery time is long So. We want make high accuracy airship photogrammetry system. This airship can catch picture Multi. spectral Aerial photographing (visible, Near infrared and thermal infrared), and High resolution (over 6million pixel). It can take atmosphere datum (Temperature (wet bulb, dew point, general), Pressure (static, dynamic), Humidity, wind speed). this airship is very Quickness that aircraft install time is lower than 30 minutes, it is compact and that conveyance is easy. High-capacity save image (628 cut per 1time (over 6million and 4band(R,G,B,NIR)) and this airship can save datum this High accuracy navigatin (position and rotate angle) by DGPS tech. and Gyro system. this airship will do monitor about red-tide, sea surface temperate, and CH-A, SS and etc.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.332-335
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• 2004

Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.

• Progress in Superconductivity
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• 제14권1호
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• 한국재료학회지
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• 제2권5호
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• pp.360-365
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• 1992

Ga 첨가효과 및 Sputter 제조조건이 전기적 특성에 미치는 영향을 고찰하기 위해 ZnO분말과 G$a_2O_3$분말을 소결하여 타겟트를 제조하여 Sputter법으로 유리기판에 Ga-doped ZnO 다결정박막을 제조하였다. RF 전력밀도, 아르곤 개스압력 및 Ga 함유량등을 최적화한 후 제조한 투명한 Ga-doped ZnO 박막의 비저항은 1$0^{-3}$ohm-cm이며, undoped 및 Ga-doped ZnO 박막의 전자농도는 각 $10^{18}$, $10^{21}$/c$m^2$이였다. 공기와 질소분위기에서 열처리를 행하였을 때 Ga-doped ZnO 박막의 비저항은 $10^{2}$ order 증가하였다. 가시광영역의 투과율은 80% 이상이였으며, Ga 함유량이 증가하면 optical band gap도 넓어졌다.

• 한국표면공학회지
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• 제51권4호
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• pp.231-236
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• 2018

We report p-type electrical characteristics of the amorphous $La_2NiO_{4+{\delta}}$ thin films which were sputtered on the glass substrates using an RF sputtering system. As-deposited thin films at room temperature and $300^{\circ}C$ were amorphous in nature. Post-annealing of the thin film samples over $400^{\circ}C$ resulted in the nano-crystallization of the $La_2NiO_{4+{\delta}}$. The electrical properties of the films were much dependent on the oxygen partial pressure, temperature of the post-annealing and sputtering ambient. The as-deposited samples at room temperature show a hole concentration of $7.82{\times}10^{13}cm^{-3}$, and it could be increased as high as $3.51{\times}10^{22}cm^{-3}$ when the films were post-annealed in an oxygen atmosphere at $500^{\circ}C$. Such p-type conductivity behavior of the $La_2NiO_{4+{\delta}}$ films suggests that the amorphous and nano-crystallized $La_2NiO_{4+{\delta}}$ films have potential for the application as p-type semiconductive or conductive materials at low temperatures where material diffusion is limited.

• 대한금속재료학회지
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• 제47권7호
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• pp.433-439
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• 2009

Ti and Ti based hydrogen storage alloys have been thought to be the third generation of alloys with a high hydrogen capacity, which makes it difficult to handle because of high reactivity. In order to solve the problem, the activation of a wide range of hysteresis of hydriding/dehydriding and without degradation of hydrogen capacity due to the hydriding/dehydriding cycle have to be improved in order to be aplied. Ti-Cr alloys have a high capacity about 0.8 wt.% in an ambient atmosphere. When the Ti-Cr alloys are added to Nb and Ta elements, they formed a laves phase in the alloy system. The Nb element was expected to make easy diffuse hydrogen in the Ti-Cr storage alloy, which was a catalytic element. In this study, the Ti-Nb-Cr ternary alloy was prepared by melt spinning. As-received specimens were characterized using XRD (X-ray Diffraction), SEM (Scanning Electron Microscopy) with EDX (Energy Dispersive X-ray) and TG/DSC (Thermo Gravimetric Analysis/Differential Scanning Calorimetry). In order to examine hydrogenation behavior, the PCI (Pressure-Composition-Isotherm) was performed at 293, 323, 373 and 423 K.