• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.107-107
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• 2010

In this study, we have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Ag/AsGeSeS thin films with the incident laser beam wavelength for the improvement of the polarization diffraction grating efficiency. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity. The result is shown that the diffraction efficiency of Ag/AsGeSeS double layer thin film for the Ag thickness, the maximum grating diffraction efficiency using 60nm Ag layer is 0.96%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.191-194
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• 2000

In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as a pumping beam and a semiconductor laser at 780nm as a probing beam. The PB for the variable thickness of thin films was investigated. The thickness of the thin films is about $0.4{\mu}m$, $0.92{\mu}m$, $1.4{\mu}m$, $2.0{\mu}m$, respectively. The experimental result of PB in chalcogenide thin films was represented higher PB in the thickness of thin film, $0.92{\mu}m$. It was meant to represent higher PB in the thickness of the film that was made closely the optimal thickness, $0.96{\mu}m$. The optimal thickness of thin film, $0.96{\mu}m$ was calculated by the penetration depth of the pumping light Also, the PB in thickness of $0.92{\mu}m$ was obtained almost two times higher 0.15 than other thickness of thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.644-647
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• 2001

Amorphous As-Ge-Se-S thin films have been studied with the aim of identifying optimum etching condition which can be used to produce holographic grating structure for use as diffractive optical elements. In this study, holographic gratings have been formed using He-Ne laser(632.8nm), and fabricated by the method of wet etching using NaOH etchant with various concentration(0.26N, 0.33N, 0.40N). The diffraction efficiency was obtained by +1st order intensity of the diffracted beam. The formed grating profiles were observed by atomic force microscope and showed that the expected grating profile could be achieved by controlling the etching time. Over-etching resulted in under-cutting of the grating lines. The highest 1st order diffraction efficiency for these gratings was about 5.05%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.5-9
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• 1996

As optical massmemories, (Se, S)-based chalcogenide amorphous films are used for a holographic supermicrofiche by using the refractive-index change. In 1000$\AA$thick-As$_{40}$ Ge$_{10}$Se$_{100-x}$S$_{x}$(x=0.25, 35at.%), the amount of refractive index change $\Delta$n reaches 0.01~0.53 at 6328, 7800$\AA$ by exposing for 15minutes plue-pass filtered mercury lamp(~4300$\AA$) and annealing 20$0^{\circ}C$. And in initially annealed As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$, photodarkening(PD) and thermalbleaching(TB) was founded.ded.B) was founded.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.162-163
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• 2007

In this paper, we fabrication of 2-D photonic crytal using holographic lithography. We used Ag doped chalcogenide AsGeSeS film and He-Ne (632.8nm) (P:P) Polarized laser beam. The thickness of Ag thin film was varied from 60nm and the thickness of chalcogenide thin film was varied from 2um. Frist, holographic lithography with 1-D photonic crystal on Ag/AsGeSeS film. And than revolved the sample $90^{\circ}$ to fabricate 2-D photonic crystal with holographic lithography.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.746-751
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• 1998

There are several methods capable of determining he magnitude of optical anisotropy, such as spectrometric ellipsometry and polarized light reflectometry. The interference method is estimated to be no influence of surface scattering. The magnitude of anisotropy is a-As/sub 40/Ge/sub 10/S/sub 35/Se/sub 15/ thin film is analyzed by the reflection interference analysis method based on the difference depending on a phase of s- and p-polarized light. The theoretically analyzed value is compared with the result obtained by the measured technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.20-23
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• 1988

Effect of light irradiation on evaporated chalcogenide glass films of an As-Se-S-Ge system has been studied. Utiling this characteristics diffraction grating of the amorphous film was obtained. Parameters such as film thickness, composition, and exporsure time influencing the diffraction efficiency were also studied. The maximum value of the diffraction efficiency achieved was 4.6% in an $As_{75}Se_{15}S_{35}-Ge_{10}$ film.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.9
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• pp.423-428
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• 2006

We have been carried out the two-beam interference method to form the diffraction grating on chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ thin films for Holography Data Storage (HDS). In the present work, we have been formed holographic diffraction gratings using He-Ne laser (632.8nm) under different Polarization state combinations (intensity polarization holography, phase polarization holography). It was obtained the diffraction grating efficiency by 11st order intensity and investigated the formed grating structure using Atomic Force Microscopy (AFM). As the results, it is shown that the diffraction efficiency of (P: P) polarized recording was maximum 2.4% and we found that its value was rather higher than that of other-polarized recordings. From the results, it is confirmed that the efficient holographic grating formation on amorphous chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ films depend on both the spatial variation of intensity and the polarization state of the incident field pattern.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.34-37
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• 2004

Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photo-induced phenomena. In this study, we make the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag thin film and then we measure the holographic diffraction efficiency according to thickness of Ag. And we form the two-dimensional holographic grating. At first, we formed one-dimensional grating and then we form two-dimensional grating by rotate the sample. We found out the most suitable thickness of Ag and in case of As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag(600${\AA}$), the diffraction efficiency was more higher than other samples. The holographic grating was formed by He-Ne laser(λ=632.8nm). The intensity of incident beam was 2.5mW and incident angle was 20$^{\circ}$. We confirm. the two-dimensional holographic grating by the pattern of diffracted beam and AFM(Atomic Force Microscope) image. We perform the etching process using by 0.26N NaOH in order to confirm clearly two-dimensional grating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.574-577
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• 1999

The chalcogenide glasses of thin films have superior property of the photoinduced anisotrophy(PA). In this study, we observed the phenomenon of Ag polarized photodoping using the irradiation with polarized He-Ne laser light, in the thin film of chalcogenide As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/ and the double-layer of Ag doped As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/. The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property