• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2006.11a
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• pp.30-33
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• 2006

Onset voltage plays a crucial role in the design of a spray microthruster. This paper presents an analytical electrostatic model to predict the behavior of onset voltage in an array of emitters. The basic idea of this method is to superimpose the electric potentials obtained from each individual emitter in an array of emitters. The results show that if one emitter operates and the other neighboring emitters are dry, the potential required for cone-jet spraying generally increases as the emitter spacing decreases (due to electrical shielding). However at very close spacing the potential can decrease. If all emitters operate at the same time, the phenomenon that even at very close spacing the onset voltage required for cone-jet spraying increases merely as the emitter spacing decreases.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.300-305
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• 2004

A preliminary study on. field emitter array cathodes was conducted aiming at applying for electrodymanic tether (EDT) propulsion systems. The EDT propulsion systems are assumed to use for active removal systems of post-mission spacecraft, which would otherwise become space debris. A survey on field emit-ter array cathode technology was conducted, and it showed that carbon nanotube (CNT) emitters are suit-able to EDT application. Trial fabrications and evaluation tests of CNT emitters were conducted, which demonstrated a target emission current density of 10 ㎃/$\textrm{cm}^2$. It was found out that the most important technical issue for developing CNT emitters is to improve the performance against voltage breakdown between the emitter and the opposite electrode.

• Journal of Korea Society of Digital Industry and Information Management
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• v.5 no.1
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• pp.83-88
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• 2009

This paper consider the problem of direction of arrival(DOA) estimation in the presence of multipath propagation. The sensor elements are assumed to be linear and uniformly spaced. Numerous authors have advocated the use of a beamforming preprocessor to facilitate application of high resolution direction finding algorithms The benefits cited include reduced computation, improved performance in environments that include spatially colored noise, and enhanced resolution. Performance benefits typically have been demonstrated via specific example. The purpose of this paper is to provide an analysis of a beamspace version of the MUSIC algorithm applicable to two closely spaced emitters in diverse scenarios. Specifically, the analysis is applicable to uncorrelated far field emitters of any relative power level, confined to a known plane, and observed by an arbitrary array of directional antenna. In this paper, we researched about optimize beam forming to smart antenna system. The covariance matrix obtained using fourth order cumulant function. Simulations illustrate the performance of the techniques.

• Nuclear Engineering and Technology
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• v.55 no.2
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• pp.648-654
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• 2023

A dual-particle imager (DPI) is configured in a hand-held form factor, then one can efficiently and conveniently deploy the DPI to detect the presence of special nuclear materials (SNM) and identify any isotopic variations that differ from their natural abundances. Here we show that by maximizing the areal coupling between a pixelated scintillator array and the partitioned photosensor readout such as a silicon photomultiplier (SiPM), the information utilization of the gamma-ray and neutron information in the radiation field can be enhanced, thus enabling one to rapidly acquire spatial maps of the distributions on gamma-ray and neutron emitters.

• International Journal of Computer Science & Network Security
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• v.21 no.2
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• pp.40-43
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• 2021

In the article of instability on the peak power level, duration and repetition period of a multifrequency space-time signal, we calculated the maximum values of the errors of the parameters of the laws of spatial-phase-frequency control. Requirements for the accuracy of the location of the phase centers of the emitters in a cylindrical phased array antenna with pyramidal horns; it is advisable to calculate the radiation field using single-stage and multi-stage distribution laws. The phase centers of individual radiation sources of a cylindrical phased array antenna have been studied; they have almost no effect on the duration and period of recurrence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.311-311
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• 2009

Carbon nanotubes (CNTs) belong to an ideal material for field emitters because of their superior electrical, mechanical, and chemical properties together with unique geometric features. Several applications of CNTs to field emitters have been demonstrated in electron emission devices such as field emission display (FED), backlight unit (BLU), X-ray source, etc. In this study, we fabricated a CNT cathode by using filtration processes. First, an aqueous CNT solution was prepared by ultrasonically dispersing purified single-walled CNTs (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). The aqueous CNT solution in a milliliter or even several tens of micro-litters was filtered by an alumina membrane through the vacuum filtration, and an ultra-thin CNT film was formed onto the alumina membrane. Thereafter, the alumina membrane was solvated by acetone, and the floating CNT film was easily transferred to indium-tin-oxide (ITO) glass substrate in an area defined as 1 cm with a film mask. The CNT film was subjected to an activation process with an adhesive roller, erecting the CNTs up to serve as electron emitters. In order to measure their luminance characteristics, an ITO-coated glass substrate having phosphor was employed as an anode plate. Our field emitter array (FEA) was fairly transparent unlike conventional FEAs, which enabled light to emit not only through the anode frontside but also through the cathode backside, where luminace on the cathode backside was higher than that on the anode frontside. Futhermore, we added a reflecting metal layer to cathode or anode side to enhance the luminance of light passing through the other side. In one case, the metal layer was formed onto the bottom face of the cathode substrate and reflected the light back so that light passed only through the anode substrate. In the other case, the reflecting layer coated on the anode substrate made all light go only through the cathode substrate. Among the two cases, the latter showed higher luminance than the former. This study will discuss the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the either side.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.28-31
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• 2013

A volcano shaped gated Si-FEA (silicon field emitter array) was simply fabricated using sputtering as a gate electrode deposition and lift-off for the removal of the oxide mask, respectively. Due to the limited step coverage of well-controlled sputtering and the high aspect ratio in Si dry etch caused by high RF power, it was possible to obtain Si FEAs with a stable volcano shaped gate structure and to realize the restriction of gate leakage current in field emission characteristics. For 100 tip arrays and 625 tip arrays, gate leakage currents were restricted to less than 1% of the anode current in spite of the volcano-shaped gate structure. It was also possible to keep the emitters stable without any failure between the Si cathode and gate electrode in field emission for a long time.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.171-175
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• 1996

Gate insulator for Si field emitter is usually formed by e-beam evaporation. However, the evaported oxide requires densification for a stable process and a reduction of gate leakage which results from its Si-rich and nonstoicheiometric structure. In this study, we have developed the process technology able to densify the evaporated oxide in H$_{2}$O ambient. Using this process, we have fabricted thefield emitter array with 625 emitters per pixel, of which gate hole diameter is 1.4.mu.m, for the pixel, anode current of 14.3.mu.A was extracted at a gate bias of 100V and gate leakage was about 0.27% of the total emission current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.347-350
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• 2001

A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.10
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• pp.43-50
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• 1995

A laser diode(LD) structure consisting of a single 150$\AA$ $Al_{0.07}$Ga$_{0.93}$As quantum well active region operating at ${\lambda}$=809nm, cladded with an AlGaAs graded-index separate confinement heterostructure, has bes been grown by MOCVD. Temperature coefficient of wavelength is approximately 0.2nm $^{\circ}C$ for the diode. The active aperture consists of five emitters separated from each other by means of SiO$_{2}$ deposition and stripe formation, which creates insulating regions that channel the current to 100-$\mu$m-wide stripes placed on 450-$\mu$m centers. From a typical uncoated LD, the output power of 0.8W has been obtained at a 1$\mu$s, 1kHz pulsed current level of 2.0$\AA$, which results in about 64% external quantum efficiency. The threshold current density is 736A/cm$^{2}$ for the case of 500$\mu$m cavity length LD's. The measure of an internal quantum efficiency was 75.8% and the internal loss 4.83$cm^{-1}$ . Finally, 3.1W output power has been obtained at a 1$\mu$s, 1kHz pulsed current level of 9A from the 500$\mu$m-aperture LD array with 460-$\mu$m- cavity length.