• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.250-250
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• 2009

The fabricated the nanostructural patterns on the surface of SiN antireflection layer of polycrystalline Si solar cell using anodic aluminum oxide (AAO) masks in an inductively coupled plasma(ICP) etching process. The AAO nanopattern mask has the hole size of about 70~75nm and lattice constant of 100~120nm. The transferred nano-patterns were observed by the scanning electron microscope (SEM). The voltage of patterned Si solar cell enhanced.

• Bulletin of the Korean Chemical Society
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• v.29 no.4
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• pp.758-760
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• 2008

Nanoporous AAO (Anodic Aluminum Oxide) membranes have many advantages as a template for variety of magnetic materials. Materials can be embedded into the pores by electrodeposition, sputtering or magnetic-field-assisted infiltration of magnetic nanoparticles. This work focuses on the fabrication of the magnetic structures in the AAO templates by electrodeposition. Our method allows the controlled growth of Co nanostructures within the porous alumina membrane in the form of dots, rods and long wires. The shape of Co nanostructures has been investigated by field emission scanning electron microscope (FESEM). The magnetic hysteresis loops of Co nanostructures were measured using SQUID at 5 K and 300 K. The magnetic properties of the Co nanostructures are proportional to their aspect ratios and can be controlled by changing the aspect ratios.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.135-136
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• 2011

본 연구에서는 실리콘 기판위의 형성된 AAO (Anodic Aluminum Oxide)의 barrier layer를 $Cl_2/BCl_3$ gas mixture에서 Neutral Beam Etching (NBE)과 Ion Beam Etching (IBE)로 각각 식각한 후 그 결과를 비교하였다. 이온빔의 경우 나노사이즈의 AAO pore의 charging에 의해 pore 아래쪽의 위치한 barrier layer를 어떤 식각조건에서도 제거하지 못하였다. 하지만, charging effect가 없고, 높은 중성화율을 나타내는 low angle forward reflected 방식의 neutral beam etching (NBE)에서는 $BCl_3$-rich $Cl_2/BCl_3$ gas mixture인 식각조건에서 AAO pore에 휘발성 $BO_xCl_y$를 형성하면서 barrier layer를 제거할 수 있었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.814-817
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• 2010

AAO thin films prepared by a two-step anodization process have pores that are uniform in diameter, highly ordered, and perfectly vertical with respect to the plane of the nano template. Further, the pore size and interpore distance can be easily controlled by varying the anodizing voltage and acid electrolyte. When metals are electrochemically deposited in the pores, metal nanowires that are highly ordered and uniform in diameter are formed in each pore.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.137-140
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• 2007

The ordering of nanopores in AAO has been improved by using laser interference lithography. After growing Fe and Cu on this substrate in vacuum and removing AAO, Fe nanodots are fabricated. The nanopores in AAO and nanodots are ordered in one dimension following the prepatterning. It has been confirmed from the magnetic hysteresis loop that the Fe nanodots have vortex structure and the dipolar interaction is dominant among them.

• Tribology and Lubricants
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• v.26 no.1
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• pp.14-20
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• 2010

Tribological properties of nanoporous structured alumina film was investigated. Alumina film (AAO: anodic aluminum oxide) of $60{\mu}m$ thickness having nanopores of 45 nm diameter with 105 nm interpore-diatance was fabricated by mild anodization process. Reciprocating ball-on-flat sliding friction tests using 1 mm diameter steel ball as a counterpart were carried out with wide range of normal load from 1 mN to 1 N in an ambient environment. The morphology of worn surfaces were analyzed using scanning electron microscopy. The friction coefficient was strongly influenced by the applied normal load. Smooth layer patches were formed on the worn surface of both AAO and steel ball at relatively high load (100 mN and 1 N) due to tribochemical reaction and compaction of wear debris. These tribolayers contributed to the lower friction at high loads. Extremely thin layer patches, due to mild plastic deformation of surface layer, were sparsely distributed on the worn surface of AAO at low loads (1 mN and 10 mN) without the evidence of tribochemical reaction. Delaminated wear particles were generated at high loads by fatigue due to repeated loading and sliding.

• Journal of the Korean Magnetics Society
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• v.14 no.3
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• pp.105-108
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• 2004

Array of magnetic Ni nanostructures has been fabricated on Si substrate by using nanoporous alumina film as a mask during deposition. The nanostructures are truncated cone-shape and the lateral sizes are comparable to height. While the continuous film shows well-defined in-plane magnetization, the nanostructure shows perpendicular component of magnetization at remanence. The hysterectic behavior of nanostructures is dominated by the demagnetizing field instead of interaction among them.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.25.2-25.2
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• 2011

Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1462-1466
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• 2013

We demonstrate that ruthenium oxide ($RuO_2$) nanotubes with controlled dimensions can be synthesized using facile electrochemical means and anodic aluminum oxide (AAO) templates. $RuO_2$ nanotubes were formed using a cyclic voltammetric deposition technique and an aqueous plating solution composed of $RuCl_3$. Linear sweep voltammetry (LSV) was used to determine the effective electrochemical oxidation potential of $Ru^{3+}$ to $RuO_2$. The length and wall thickness of $RuO_2$ nanotubes can be adjusted by varying the range and cycles of the electrochemical cyclic voltammetric potentials. Thick-walled $RuO_2$ nanotubes were obtained using a wide electrochemical potential range (-0.2~1 V). In contrast, an electrochemical deposition potential range from 0.8 to 1 V produced thin-walled and longer $RuO_2$ nanotubes in an identical number of cycles. The dependence of wall thickness and length of $RuO_2$ nanotubes on the range of cyclic voltammetric electrochemical potentials was attributed to the distinct ionic diffusion times. This significantly improves the ratio of surface area to mass of materials synthesized using AAO templates. Furthermore, this study is directive to the controlled synthesis of other metal oxide nanotubes using a similar strategy.

• Korean Chemical Engineering Research
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• v.53 no.3
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• pp.401-406
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• 2015

Getter is a class of materials used in absorbing gases such as hydrogen and moisture in microelectronics or semiconductor devices to operate properly. In this study, we developed a new device structure consisting of porous anodized alumina films on textured silicon wafer, which have cost efficiency in materials and processing aspects. Anodic aluminum oxide (AAO) with controlled pore sizes can be applied to a high-efficiency moisture absorber due to the high surface area and OH- saturated surface property. The moisture sorption capacity was 2.02% (RH=35%), obtained by analyzing isothermal adsorption/desorption curve.