• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.45-51
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• 2007

We designed and fabricated the planar graded-gap injector GaAs Gm diodes with $1.6{\mu}m$ active length for operation at 94 GHz. The fabrication of the Gunn diode is based on MESA etching, Ohmic metalization, and overlay metalization. The measured negative resistance characteristics of the graded-gap injector GaAs Gunn diodes are examined for two different device structures changing the distance between the cathode and the anode electrodes. Also, we discuss the DC results under the forward and the reverse biases concerning the role of the graded-gap injector. It is shown that the structure having the shorter distance between the cathode and the anode electrode has higher peak current, higher breakdown voltage, and lower threshold voltage than those of the larger distance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.255-259
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• 2008

Built-in voltage in ITO/$Alq_3$/ Al organic light-emitting diodes was studied by varying a thickness of $Alq_3$ layer using modulated photocurrent technique at ambient condition. A thickness of the $Alq_3$ layer was varied from 100 to 250 nm. From the bias voltage-dependent photocurrent, built-in voltage of the device was able to be determined. The obtained built-in voltage is about 0.8 V irrespective of the $Alq_3$ layer thickness in the device. This value of built-in voltage confirms that the built-in voltage is generated due to a difference of work function of the anode and cathode. The $Alq_3$ layer thickness independent built-in voltage indicates that the built-in electric field in the device is uniform across the organic layer.

• ETRI Journal
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• v.24 no.4
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• Transactions of the Korean hydrogen and new energy society
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• v.14 no.3
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• pp.229-235
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• 2003

A 50W class MCFC stack was operated in order to test a new design of the circular shaped separator. in the new design, the anode gas was supplied into the stack and was exhausted out of the stack after the anode reaction. The exhausted gas was reacted with the cathode gas supplied with excess oxygen in the vessel in which the stack was placed. Then the reacted gas flowed into the cathode side of the stack and was exhausted through the outlet located in the center of the stack. The average voltage of the single cells in the stack was 0.835V under the current density of $150mA/cm^2$, initially, and the degradation rate of the stack voltage was 1.7%/1,000h. High stack voltage with good stability of the present stack was due to the small temperature gradient in the stack. The small temperature gradient as well as the easiness of temperature control was the result of the new configuration of the separator which utilized the heat of the combustion reaction between anode outlet gas and the cathode inlet gas for heating the stack.

• Transactions of the Korean hydrogen and new energy society
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• v.33 no.6
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• pp.723-732
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• 2022

Cracking ammonia inside solid oxide fuel cell (SOFC) stack is a compact and simple way. To prevent sharp temperature fluctuation and increase cell efficiency, the decomposition reaction should be spread on whole cell area. This leading to a question that, how does anode thickness affect the conversion rate of ammonia and the cell voltage? Since the 0D model of SOFC is useful for system level simulation, how accurate is it to use equilibrium solver for internal ammonia cracking reaction? The 1D model of ammonia fed SOFC was used to simulate the diffusion and reaction of ammonia inside the anode electrode, then the partial pressure of hydrogen and steam at triple phase boundary was used for cell voltage calculation. The result shows that, the ammonia conversion rate increases and reaches saturated value as anode thickness increase, and the saturated thickness is bigger for lower operating temperature. The similar cell voltage between 1D and 0D models can be reached with NH₃ conversion rate above 90%. The 0D model and 1D model of SOFC showed similar conversion rate at temperature over 750℃.

• Journal of the Korean Electrochemical Society
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• v.19 no.4
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• pp.129-133
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• 2016

In this study, a polymer-carbon composite material is prepared for environmental-friendly organic anode. On poly(styrenesulfonate)(PSS)-carbon composite anode, the carbon is coated by PSS as a core-shell structure and the PSS-carbon composite anode has $524mAh\;g^{-1}$ theoretical capacity with <0.6V voltage. Moreover, the PSS-carbon composite anode shows $519.6mAh\;g^{-1}$, $461.2mAh\;g^{-1}$, $411.8mAh\;g^{-1}$ and $315.9mAh\;g^{-1}$ discharge capacities at 0.1, 0.5, 1 and 10 C, respectively, and stable cycle performance up to 30 cycles. The PSS-carbon composite anode, containing polystyrene and sulfonate functional groups, is suitable for high electrochemical properties organic rechargeable battery.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.246-256
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• 2021

Mo,Cu-doped CeO₂ (CMCuO) nanopowders were synthesized by the nitrate-fuel combustion method aiming to improve the electrical and electrochemical properties of its Mo-doped CeO₂ (CMO) parent by the addition of copper. An electrical conductivity of ca. 1.22·10^-2 S cm^-1 was measured in air at 800℃ for CMCuO, which is nearly 10 times higher than that reported for CMO. This increase was associated with the inclusion of copper into the crystal lattice of ceria and the presence of Cu and Cu₂O as secondary phases in the CMCuO structure, which also could explain the increase in the charge transfer activities of the CMCuO based anode for the hydrogen and carbon monoxide electro-oxidation processes compared to the CMO based anode. A maximum power density of ca. 120 mW cm^-2 was measured using a CMCuO based anode in a solid oxide fuel cell (SOFC) with YSZ electrolyte and LSM-YSZ cathode operating at 800℃ with humidified syngas as fuel, which is comparable to the power output reported for other SOFCs with anodes containing copper. An increase in the area specific resistance of the SOFC was observed after ca. 10 hours of operation under cycling open circuit voltage and polarization conditions, which was attributed to the anode delamination caused by the reduction of the Cu₂O secondary phase contained in its microstructure. Therefore, the addition of a more electroactive phase for hydrogen oxidation is suggested to confer long-term stability to the CMCuO based anode.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.38-42
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• 1999

Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92${\mu}$A/triode over 90 hours, a small gate leakage current of 0.23 ${\mu}$A/triode and an outstanding transconductance of 57${\mu}$S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.140-145
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• 2001

This paper proposes to use a 20[kHz] phase­shifted Full-Bridge (FB) Zero-Voltage-Switched (ZVS) PWM converter in order to drive a 600[W] magnetron, and analyzes the operational modes in a switching period. Additionally, the controller of the average anode current is designed. Simulation studies and experiments verify that the proposed converter and the average anode current controller shows good performance to drive the magnetron.