• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.425-428
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• 1999

In this paper, the electrical properties of Pt/YMnO$_3$/Si(100) structures with difference rapid thermal annealing (RTA) treatment were investigated. YMnO$_3$films were obtained without buffer layers, introducing oxygen. A typical value of the dielectric constant was about 20 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 150kV/cm was about 1.34$\times$10$^{12}$ $\Omega$ . cm. The minimum interface state density around midgap was estimated to be about 5$\times$10$^{11}$ cm$^2$. eV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.50-55
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• 2008

AI-doped ZnO(AZO) thin films have been fabricated on glass substrate by sol-gel method, and the effect of Al precursors and post-annealing temperature on the characteristics of AZO thin films was investigated. The sol was prepared with zinc acetate, EtOH, MEA and Al precursors. In order to dope Al in ZnO, two types of aluminum nitrate and aluminum chloride were used as Al precursor. Zinc concentration was 0.5 mol/l and the content of Al precursor was 1 at% of Zn in the sol. The sol was spin-coated on glass substrate, and the coated films were annealed at 550ue for 2 hand were post-annealed at temperature ranges of $300{\sim}500^{\circ}C$ for 2 h in reducing atmosphere ($N_2/H_2$= 9/1). Structural, electrical and optical propertis of the fabricated AZO thin films were analyzed by XRD, FE-SEM, AFM, hall effect measurement system and UV-visible spectroscopy. Optical and electrical properties of AZO thin films prepared with aluminum nitrate as Al precursor were better than those of films prepared with aluminum chloride. The electrical resistivity and the optical transmittance of films decreased with increasing post-annealing temperatures. The minimum electrical resistivity of $2{\times}10^{-3}$ and the maximum optical transmittance of 91% were obtained for the AZO thin films post-annealed at $550^{\circ}C\;and\;300^{\circ}C$, respectively.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.191-195
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• 2004

Tunnel junctions with AI-N barriers fabricated by microwave-excited plasma were studied. When the Al thickness, nitridation time, and annealing temperature were 1 nm (0.8 nm), 50 s (35 s), and $280^{\circ}C$ ($300^{\circ}C$), TMR ratio and resistance-area product (RA) were 49% (34%) and $3 ${\times}$ 10^4$ $\Omega$$\mu\m^2$ ($1.5 ${\times}$ 10^4$ $\Omega$$\mu\m^2$), respectively. In order to clarify the annealing temperature dependence of TMR ratio, the local transport properties were measured for Ta 5 nm/Cu 20 nm/Ta 5 nm$29_{76}$ $Fe_{24}$ 2 nm/Cu 5 nm/M $n_{75}$$Ir_{25}$ 10 nm/ $Co_{71}$ $Co_{29}$ 4nm/Al-N junction with Al thickness of 0.8 nm and nitridation time of 35s at various temperatures. The increase of TMR ratio after annealing at $300^{\circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 34%, can be well explained by the enhancement of the average barrier height ($\Phi_{ave}$) and the reduction of its fluctuation. After further annealing at $340^{\circ}C$, the leakage current was observed and the TMR ratio decreaseded

• Journal of Korean Society on Water Environment
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• v.35 no.6
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• pp.550-556
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• 2019

This study was carried out to improve the photocatalytic reaction of TiO₂ photocatalyst. During the photocatalytic reaction, OH radicals are generated and they have an excellent oxidation capability for wastewater treatment. To evaluate the OH radicals generated according to crystallographic structure of TiO₂ nanotubes photocatalyst, a probe compound, 4-Chlorobenzoic acid was monitored to evaluate OH radical. Ultraviolet light was applied for photocatalytic reaction of TiO₂. The 4-Chlorobenzoic acid solution was prepared at laboratory. TiO₂ nanotube was grown on titanium plate by using anodization method. The annealing temperature for TiO₂ nanotube was varied from 400 to 900 ℃ and the crystal forms of the TiO₂ nanotube was analyzed. Depending on annealing temperature, TiO₂ nanotubes have shown different crystal forms; 100% anatase (0 % rutile), 18.4 % rutile (81.6 % anatase), 36.6 % rutile (63.4 % anatase) and 98.6% rutile (1.4% anatase). As the annealing temperature increases, the rutile ratio increases. OH radical generation from 18.4 % rutile TiO₂ nanotube plate was about 3.8 times higher than before annealing and 1.4 times higher than only 100 % anatase-TiO₂ nanotube. The efficiency of the 18.4% rutile TiO₂ nanotube was the best in comparison to TiO₂ nanotube with 18.4 %, 36.6 % and 98.6 % rutile. As a result, photocatalytic ability of 18.4 % rutile-TiO₂ nanotube plate was higher than 100 % anatase-TiO₂ nanotube plate.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.1
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• pp.31-36
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• 2002

Low energy boron ions were implanted into the preamorphized and crystalline silicon substrates to form 0.2${\mu}m$ $p^+-n$ junctions. The rapid thermal annealing(RTA) was used to annihilate the crystal defects due to implantation and to activate the implanted boron ions, and the furnace annealing was employed to reflow the BPSG(bolo-phosphosilicate glass). The implantation conditions for Gepreamorphization were the energy of 45keV and the dose of 3$\times$1014cm-2. BF2 ions employed as a p-type dopant were implanted with the energy of 20keV and the dose of 2$\times$1015cm-2. The thermal conditions of RTA and furnace annealing were $1000^{\circ}C$/10sec and $850^{\circ}C$/40min, respectively. The junction depths were measured by SIMS and ASR techniques, and the 4-point probe was used to measure the sheet resistances. The electrical characteristics were analyzed via the leakage currents of the fabricated diodes. The single thermal processing with RTA produced shallow junctions of good qualities, and the thermal treatment sequence of furnace anneal and RTA yielded better junction characteristics than that of RTA and furnace anneal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.241-246
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• 2003

The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.465-472
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• 2003

Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Ge/Ti/Pt ohmic contact minimum specific contact resistivity of $3.7${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by rapid thermal annealing at $^400{\circ}C$/10 sec. In the Pd/Ge/Ti/Au ohmic contact, minimum specific contact resistivity of $1.1${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by annealing at 40$0^{\circ}C$/10 sec but the ohmic performance was degraded with increasing annealing temperature due to the reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact (high-$10^{-6}$ /$\Omega$$\textrm{cm}^2$) were maintained after annealing at $450^{\circ}C$/10 sec. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.5 ㎓ and 65.0 ㎓, respectively, and maximum oscillation frequencies were 50.5 ㎓ and 51.3 ㎓, respectively, indicating very successful high frequency operations.

• Korean Journal of Clinical Laboratory Science
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• v.36 no.1
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• pp.33-37
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• 2004

In order to study the effect of temperature of denaturation, annealing and extension and cycles on amplification of DNA by PCR method, We isolated the hepatitis B virus DNA from hepatitis B patient blood and compared the density of DNA amplified by Reference PCR Program (denaturation at $94^{\circ}C$ for 30 sec., annealing at $60^{\circ}C$ for 1 min., extension at $72^{\circ}C$ for 1 min., holding at $72^{\circ}C$ for 5min., 30 cycles) that is usually used in laboratory to the density of DNA amplified by PCR program changed only the denaturation temperature or annealing temperature or extension temperature. We amplified about 341bp of hepatitis B virus DNA by Reference PCR Program from hepatitis patient blood, but the DNAs denatured at $72^{\circ}C$ or $60^{\circ}C$ were not detectable on photoradiography film. The DNA amplified at $37^{\circ}C$ of annealing temperature was not detectable, but the DNA annealed at $72^{\circ}C$ was detectable the lower density of DNA than the DNA amplified by Reference PCR Program. Each DNA amplified by PCR program changed only the extension temperature to $37^{\circ}C$ or $60^{\circ}C$ was almost same density as DNA amplified by Reference PCR Program. We compared the density of hepatitis B virus DNA amplified by Reference PCR Program for 30 cycles, 20 cycles, 10 cycles, and 5 cycles. The DNA cycled for 20 cycles was not amplified well as cycled for 30 cycles, but the DNA was detectable on the photoradiography film. The DNAs amplified for 10 cycles or 5 cycles were not detectable on photoradiorgaphy film. The concentration of hepatitis B virus DNA amplified in Reference PCR condition for 30 cycles, 20 cycles, 10 cycles, and 5 cycles were $72{\mu}g/m{\ell}$, $83{\times}10^{-3}{\mu}g/m{\ell}$, $27{\times}10^{-6}{\mu}g/m{\ell}$, and nondetectable, respectively.

• Solar Energy
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• v.11 no.1
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• pp.41-49
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• 1991

In this study, the (P)SiC/(N)Si solar cell is fabricated by the vacuum evaporation method with the substrate temperature at about $200{\pm}5[5^{\circ}C]$ and its characteristics are investigated. The optimal thickness of $1.2[{\mu}m]$ of SiC film is derived from the relation between film thickness and conversion efficiency. The characteristics of solar cells are improved by the annealing. The optimum annealing temperature and duration are $420[^{\circ}C]$ and 12[min], respectively it is shown that the peak values of spectral response are shifted to the long wavelength region with increasing the annealing temperature. The X-ray diffraction patterns and the scanning electron micrographs show the grain grow thin SiC film as the annealing temperature and time is increased. The best conversion efficiency is 11.7[%] for a $2.5{\times}1[cm^2]$ cell.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.231-236
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• 1997

To improve electrical properties and uniformity of high-low doped n-type GaAs, new ohmic contacts with a low-resistance and the superior uniformity was developed using a concept of hybrid ohmic contact. The hybrid ohmic contact displayed good surface and interface morphology and had minimum contact resistivity of 3${\times}$10-6 $\Omega$$\textrm{cm}^2$ in a wide annealing temperature ranged from 340$^{\circ}C$ to 420$^{\circ}C$, which was much wider than that of conventional ohmic contacts. The microstructural analysis showed that the Pd/Ge ohmic contact at low annealing temperature (∼300$^{\circ}C$) and also annealing temperature (∼400$^{\circ}C$), resulting ij hybrid ohmic contacts.