• Journal of the Korean Society for Precision Engineering
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• v.11 no.2
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• pp.173-181
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• 1994

A Cold spot temperature control system for the batch annealing furnace has been estabilished in order to reduce energy consumption to improve productivity and stabilize the propertics of products. Therefore we confirmed a relation between annealing cycle time and atmospheric gas, variation of coil cold spot temperature with time during heating and actual temperature measurements at mid-width of each coil during heating and actual temperature measurements at mid-width of each coil during soaking. The results of the tempaeature variation effect on the batch annealing are as follows. 1) Heating time is reduced to one half with increasing atmospheric gas flow rate and changing of atmospheric gas component from HNx to Ax gas, and annealing cycle time is reduced to 2.7 times. 2) In case of short time healing, the slowest heating part is the center of B coil, in case of long time heating, the low temperature point moves from the center of coil to inside coil. And the temperature in this part is higher than other parts when cooling. When finished heating, the cold spot is located 1/3 of coil inside in case of HNx atmospheric gas. But center of coil in case of Ax atmospheric gas. 3) The outside of top coil is the highest temperature point when heating, which becomes the lowest temperature point when cooling. So, this point becomes high temperature zone at heating and low temperature zone at cooling, It has relation according to atmospheric gas component and flow rate. 4) Soaking time at batch annealing cycle determination is made a decision by the input coil width, and soaking time for quality homogenization of 1214mm width coil must be 2.5 hours longer than that of 914mm width coil for the same ciol weight. 5) Annealing cycle time with Ax atmospheric gas is extended 1 hour in of slow cooling during 5 hours in order to avoid rapid cooling.

• Journal of Advanced Marine Engineering and Technology
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• v.26 no.1
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• pp.90-98
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• 2002

In this paper, the annealing heat treatments for the best corrosion resistant of Ti(Grade 2) were studied in a 3.5% NaCl solution by electrochemical methods. The annealing heat treatments were accomplished at 650, 700 and $750^{\circ}C$ with different time of 30min., 1hour and 2 hours in a vacuum condition. The obtained results are: 1) in the case of solution heat treated $930^{\circ}C$ for 2 hours in a vacuum and air, the corrosion potentials were -348.7 and -567. 1mV, and current densities 2.32 and $22.62\mu\textrm{A}$, respectively, 2) as increase both annealing heat treatment temperature 650, 700, $750^{\circ}C$ and time 30min., 1 hour, 2 hours, the corrosion potential were decreased, whereas corrosion current density increased, 3) in the case of cyclic polarization, the measured charges were increased as increasing solution heat treatment temperature and time, 4) on the bases of corrosion potential, current density and charge, the best annealing temperature and time were measured as $700^{\circ}C$ and 30min. for Ti(Grade 2) material.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.124-132
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• 2021

Graphene which grown on the cobalt or nickel sputtered copper foil depending on the annealing time was studied. Graphene on the copper foil grown by chemical vapor deposition was compared to those on cobalt or nickel sputtered copper foil by using a RF (Radio Frequency) magnetron sputtering at room temperature. FLG(few-layer graphene) was identified independent of substrates by Raman and X-Ray Photoelectron Spectroscopy analyses. On copper foil, size and area fraction of the graphene growth increased until 30 minutes annealing and then didn't changed. Comparing to that, graphene on the cobalt refined till 50 minutes annealing, after then the effect disappeared which means a similar shape to that on copper foil. On nickel the graphene refined irrespective of annealing time that is possibly because of the complete solid solution of nickel with copper.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.23-30
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• 1993

Hydrogenation on the top gate and bottom gate Poly-Si TET's was performed by using Nh$_{3}$ plasma and annealing SiN film deposited by PECVD and then the electric characteristics on Poly-Si TET were investigated. As the time of NA$_{3}$ plasma treatment increaes, on/off current ratio gradually increases and the swing value decreases. The trap densities of graim boundaries in Poly-Si decrease very much during the inital 20min of hydrogenation time, and the decreasing scale becomes smaller after 20 min. The electric characteristics of the top gate TFT are better than those of the bottom gate TFT, it is considered due to the defects at the interface between the Poly-Si and the underlayer, SiO$_{2}$. After NH$_{3}$ plasma was treated for 2 hours for the top gate TFT, as the aging time atroon temperature increases on current was not scacely changed and off current decreases more than 1 order. Gate current density recovers to original value after the aging treatment for 8 days and then the electric characteristics are finally improved. It is suggested that the degraded characteristics of gate oxide are improved, from the variations of C-V characteristics with aging time. For the hydrogenation of isothermal and isochronal annealing SiN film deposited by PECVD, the characteristics of Poly-Si TFT are improved with increasing annealing temperature and are not largely changed with increasing annealing time. This results is good in agreement with the hydrogen reduction in Sin film as variations of annealing temperature and time.

• Korean Journal of Metals and Materials
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• v.50 no.10
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• pp.775-783
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• 2012

The effect of thermal annealing on the in-situ growth characteristics of intermetallics (IMCs) and the mechanical strength of Cu pillar/Sn-3.5Ag microbumps are systematically investigated. The $Cu_6Sn_5$ phase formed at the Cu/solder interface right after bonding and grew with increased annealing time, while the $Cu_3Sn$ phase formed at the $Cu/Cu_6Sn_5$ interface and grew with increased annealing time. IMC growth followed a linear relationship with the square root of the annealing time due to a diffusion-controlled mechanism. The shear strength measured by the die shear test monotonically increased with annealing time. It then changed the slope with further annealing, which correlated with the change in fracture modes from ductile to brittle at a critical transition time. This is ascribed not only to the increasing thickness of brittle IMCs but also to the decreasing thickness of the solder, as there exists a critical annealing time for a fracture mode transition in our thin solder-capped Cu pillar microbump structures.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.48 no.4
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• pp.371-378
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• 1999

This paper presents an efficient algorithm for loss reduction of distribution system by automatic sectionalizing switch operation in large scale distribution systems of radial type. Simulated Annealing algorithm among optimization techniques can avoid escape from local minima by accepting improvements in cost, but the use of this algorithm is also responsible for an excessive computation time requirement. To overcome this major limitation of Simulated Annealing algorithm, we may use advanced Simulated Annealing algorithm. All constaints are divided into two constraint group by using perturbation mechanism and penalty factor, so all trail solutions are feasible. The polynomial-time cooling schedule is used which is based on the statistics calculation during the search. This approaches results in saving CPU time. Numerical examples demonstrate the validity and effectiveness of the proposed methodology.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.383-386
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• 1988

In MOS integrated circuits, annealing after oxidation process is necessary to improve physical properties of silicon dioxide. With subsequent annealing in inert gases such as nitrogen or argon, and excess silicon bond is allowed time to complete the oxidation and surface charge density is reduced. In this paper, we will present effects of the rapid thermal annealing on silicon dioxide. In order to evaluate characteristics of silicon dioxide, we analyzed C-V curve dependent on annealing time and temperature, and presented variation of fixed oxide charge.

• The KIPS Transactions:PartA
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• v.18A no.2
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• pp.69-74
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• 2011

The minimum dominating set problem of a graph G is to find a smallest possible dominating set. The minimum dominating set problem is a well-known NP-complete problem such that it cannot be solved in polynomial time. Heuristic or approximation algorithm, however, will perform well in certain area of application. In this paper, we suggest three different simulated annealing algorithms and experimentally show better efficiency improvement by applying these algorithms to the graph instances developed by DIMACS.

• Journal of information and communication convergence engineering
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• v.2 no.3
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• pp.149-152
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• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from $27^{\circ}C\;to\;300^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.16-19
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• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from 27$^{\circ}C$ to 30$0^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.