• Journal of Korea Society of Industrial Information Systems
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• v.10 no.4
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• pp.16-25
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• 2005

In this paper, we proposed a novel algorithm combined simulated annealing and genetic algorithms for designing optimal binary phase computer generated hologram. In the process of genetic algorithm searching by block units, after the crossover and mutation operations, simulated annealing algorithm searching by pixel units is inserted. So, the performance of BPCGH was improved. Computer simulations show that the proposed combined iterative algorithm has better performance than the simulated annealing algorithm in terms of diffraction efficiency

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.180-184
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• 2017

In this study, we examine the electrical properties of diketopyrrolopyrrole (DPP) containing polymer semiconductors that have been reported to show high performance with ambipolar characteristics. We prepared three different DPP based polymer semiconductors (PDPPTPT, PDPP3T, and PDPP2T-TT) and fabricated organic thin film transistors (OTFTs) with ambipolar polymer semiconductors as an active layer. All three DPP polymers showed only p-type properties at initial measurements. However, after annealing in vacuum oven for 24 hours, it was found that the DPP based polymers have both p-type and n-type properties. It is speculated that the residual impurities supposedly regarded as a strong electron trap source were eliminated during the vacuum process.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2000.10a
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• pp.17-20
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• 2000

In order to improve the sheet formability of the ferritic stainless steel, the through-thickness textures of the recrystallized sample was modified by means of a thermomechanical treatment. An annealing process between the cold rolling reductions modified the preferred orientations throughout the thickness, which resulted in the modification of the final cold rolling texture as well as the final recrystallization texture. With the help of the modification of the recrystallization texture by the intermediate annealing, improvement of the sheet formability, i.e. an increase of the Lankford value.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.159-163
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• 2006

The effects of annealing temperature and time on mechanical properties and microstructures were studied in cold drawn pearlitic steel wires containing 0.84wt% Si. Annealing was performed from $200^{\circ}C$ to $450^{\circ}C$ with different time of 30sec, 1min, 15min and 1hr. The increase of tensile strength at low temperature was related with strain ageing. The decrease of tensile strength at high annealing temperature was related with spherodization of cementite and the occurrence of recovery of the lamellar ferrite in the pearlite. The improvement of ductility was connected with spherodization of cementite plate in pearlite and recovery process by reduction of high dislocation density at short time annealing temperature of $400^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.171-176
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• 1994

The spin-casted PLZT(9/65/35) thin films through polymeric sol-gel process were prepared on Pt substrate. The crack-free, uniform and dense films were obtained by post-annealing at the temperature between 35$0^{\circ}C$ and $700^{\circ}C$. The composite structure mixed together with large grains called "rosette" and surrounding small grains were observed on the films annealed over $600^{\circ}C$. Pyrochlore phase was completely changed to perovskite phase above $600^{\circ}C$ with the increase of annealing temperature. Dielectric constant (k) was larger with the increase of film thickness and annealing temperature. from the measurements of dielectric constant as a function of measuring temperature, it was also observed that Curie temperature was shifted to higher temperature with the increase of film thickness and annealing temperature. The pyroelectric coefficient(P) of 10 times coated film annealed at $700^{\circ}C$ was 65 $\mu$C/$\textrm{cm}^2$.K.$.K.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.268-269
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• 2008

We have examined the effect of physical drying and annealing conditions for the soluble derivatives of polythiophene as p-type channel materials of organic thin film transistors (OTFTs) in our special designed drying system; performances of the jetting-processed OTFTs can be improved more than 10 times just by optimizing the physical conditions of drying and annealing.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.3
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• pp.294-301
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• 1988

A study on the lattice damages and impurity depth profiles have been performed with BF2 ion implanted silicon materials. Electrical measurement, SIMS and TEM analysis techniques were used in order to identify the reverse annealing phenomena, impurity depth profiles and lattice damages. A typical reverse annealing phenomena were shown at the dose of 1x10**15/cm\ulcorner and non-reverse annealing at the dose of 5x10**15/cm\ulcorner This was explained with the formation of the amorphous region at BF2+ ion implantation with high dose. That is, the amorphous reigons were recrystallized centrated at certain regions were measured by SIMS technique. The dislocation loops-like crystalline defects were observed with TEM cross sections, which were formed at the lattice damaged region during annealing process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.128-132
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• 1998

2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at $750^{\circ}C$ for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from $2.4{\mu}m$ to $15{\mu}m$, dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 ${\mu}C/cm^2$ and Optical transmittance was decreased.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.164-174
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• 2004

Computer control of experiments is very powerful because computer can outperform human being for most routine and repeated procedures. We successfully made the whole process of sputtering and annealing fully automated and controllable through network. The present work shows a possibility of building unmanned laboratory.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.5C
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• pp.468-475
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• 2003

In this Paper, we design an optimal binary phase computer generated hologram for Pattern generation using combined genetic algorithm and simulated annealing algorithm together. To design an optimal binary phase computer generated hologram, in searching process of the proposed method, the simple genetic algorithm is used to get an initial random transmittance function of simulated annealing algorithm. Computer simulation shows that the proposed algorithm has better performance than the genetic algorithm or simulated annealing algorithm of terms of diffraction efficiency