• ETRI Journal
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• v.31 no.6
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• pp.717-724
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• 2009

This paper describes a 1.2 V 12 b 60 MS/s CMOS analog front-end (AFE) employing low-power and flexible design techniques for image signal processing. An op-amp preset technique and programmable capacitor array scheme are used in a variable gain amplifier to reduce the power consumption with a small area of the AFE. A pipelined analog-to-digital converter with variable resolution and a clock detector provide operation flexibility with regard to resolution and speed. The AFE is fabricated in a 0.13 ${\mu}m$ CMOS process and shows a gain error of 0.68 LSB with 0.0352 dB gain steps and a differential/integral nonlinearity of 0.64/1.58 LSB. The signal-to-noise ratio of the AFE is 59.7 dB at a 60 MHz sampling frequency. The AFE occupies 1.73 $mm^2$ and dissipates 64 mW from a 1.2 V supply. Also, the performance of the proposed AFE is demonstrated by an implementation of an image signal processing platform for digital camcorders.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.3
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• pp.201-210
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• 2002

This paper describes a 3.3 (V) low power 4 digit CMOS quaternary to analog converter (QAC) designed with a neuron MOS($\upsilon$MOS) down literal circuit block and cascode current mirror source block. The neuron MOS down literal architecture allows the designed QAC to accept not only 4 level voltage inputs, but also a high speed sampling rate quaternary voltage source LSB. Fast settling time and low power consumption of the QAC are achieved by utilizing the proposed architecture. The simulation results of the designed 4 digit QAC show a sampling rate of 6(MHz) and a power dissipation of 24.5 (mW) with a single power supply of 3.3 (V) for a CMOS 0.35${\mu}{\textrm}{m}$ n-well technology.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1229-1232
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• 2003

In this paper, The High-speed Low-power Analog-to-Digital Convener Archecture is proposed using the parallel S/H for High-speed operation. This technique can significantly reduce the sampling frequency per S/H channel. The Analog-to-Digital Converter is designed using 0.35${\mu}{\textrm}{m}$ CMOS technology. The simulation result show that the proposed Analog-to-Digital Converter can be operated at 40Ms/s with 8-bit resolution and INL/DNL errors are +0.4LSB~-0.6LSB / +0.9LSB~-1.4LSB , respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.2
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• pp.47-52
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• 2017

In this paper, CMOS SAR A/D converter 1.8V supply for the design of an A/D converter having an middle speed for the biological signal processing was designed. This paper proposes design of a 10-bit SAR Analog to Digital Converter improving linearity driven by MSB node of C-DAC array divided into 4 equal parts. It enhances linearity property, by retaining the analog input signal charging time at MSB node. Because MSB node samples analog input, it enhances resolution through getting initial input signal precisely. By using split capacitor on C-DAC array, it reduced chip size and power dissipation. The Proposed SAR A/D Converter is fabricated in 0.18um CMOS and measured 7.5 bits of ENOB at sampling frequency 4MS/s and power supply of 1.8V. It occupies a core area of $850{\times}650um^2$ and consumes 123.105uW. Therefore it results in 170.016fJ/step of FOM(Figure of Merit).

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.5
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• pp.109-114
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• 2023

In this paper, a 2-channel Image-Reject receiver using a 65-nm CMOS process is presented for Ka-band compact radars. The designed receiver consists of Low-Noise Amplifier (LNA), IQ mixer, and Analog Baseband (ABB). ABB includes a complex filter in order to suppress unwanted images, and the variable gain amplifiers (VGAs) in RF block and ABB have gain tuning range from 4.5-56 dB for wide dynamic range. The gain of the receiver is controlled by on-chip SPI controllers. The receiver has noise figure of <15 dB, OP1dB of >4 dBm, image rejection ratio of >30 dB, and channel isolation of >45 dB at the voltage gain of 36 dB, in the Ka-band target frequency. The receiver consumes 420 mA at 1.2 V supply with die area of 4000×1600 ㎛.

• Proceedings of the KIEE Conference
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• 2004.11c
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• pp.626-628
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• 2004

This paper describes an 8-bit CMOS folding A/D converter for set-top box. Modular low-power, high-speed CMOS A/D converter for embedded systems aims at design techniques for low-power, high-speed A/D converter processed by the standard CMOS technology. The time-interleaved A/D converter or flash A/D converter are not suitable for the low-power applications. The two-step or multi-step flash A/D converters need a high-speed SHA, which represents a tough task in high-speed analog circuit design. On the other hand, the folding A/D converter is suitable for the low-power, high-speed applications(Embedded system). The simulation results illustrate a conversion rate of 40MSamples/s and a Power dissipation of 80mW(only analog block) at 2.5V supply voltage.

• Proceedings of the KIEE Conference
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• 1999.11c
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• pp.706-708
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• 1999

In recent years, analog to digital converter is significant component in high frame rate system. But, in the future. as long as minimum line width is reduced, matching between speed and resolution may be worse. In this paper, first-order $\Sigma-\Delta$ analog to digital converter is adopted and designed as its solutions. Hspice simulation is performed, using $0.65{\mu}m$ CMOS 2-poly 2-metal model parameter.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.21-24
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• 2002

This paper presents a fully integrated, wide tuning range differential CMOS voltage-controlled oscillator, tuned by pMOS-varactors. VCO utilizing a novel tuning scheme is reported. Both coarse digital tuning and fine analog tuning are achieved using pMOS-varactors. The VCO were implemented in a 0.18-fm standard CMOS process. The VCO tuned from 1.8㎓ to 2.55㎓ through 2-bit digital and analog input. At 1.8V power supply voltage and a total power dissipation of 8mW, the VCO features a phase noise of -126㏈c/㎐ at 3㎒ frequency offset.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2257-2261
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• 2007

A new CMOS transresistance amplifier for low-voltage analog integrated circuit design applications is presented. The proposed transresistance amplifier circuit based on common-source and negative feedback topology is compared with other recent reported transresistance amplifier. The proposed transresistance amplifier achieves high transresistance gain, gain-bandwidth with the same input/output impedance and the minimum supply voltage $2V_{DSAT}+V_T$. Hspice simulation using 1.8V TSMC $0.18{\mu}m$ CMOS technology was performed and achieved $59dB{\Omega}$ transresistance gain which is above the maximum about $18dB{\Omega}$ compared to transresistance gain of the reported circuit.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.7
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• pp.1726-1733
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• 1996

A 3V-50MHz analog CMOS continuous-time current-mode filter with a negative resistance load(NRL) is proposed. In order to design a current-mode current integrator, a modified basic current mirror with a NRL to increase the output resistance is employed. the inherent circuit structure of the designed NRL current integrator, which minimizes the internal circuit nodes and enhances the gain bandwidth product, is capable of making the filter operate at the high frequency. The third order Butterworth low pass filter utilizing the designed NRL current integrator is synthesized and simulated with a 1.5.mu.m CMOS n-well proess. Simulation result shows the cutoff frequency of 50MHz and power consumption of 2.4mW/pole with a 3V power supply.