• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.3
• /
• pp.367-374
• /
• 2016

This paper presents an electro-thermal modeling of an amorphous silicon (a-Si) uncooled microbolometer. This modeling provides a comprehensive solution for simulating the electro-thermal characteristics of the fabricated microbolometer and enables electro-thermal co-simulation between MEMS and CMOS integrated circuits. To validate this model, three types of uncooled microbolometers were fabricated using a post-CMOS surface micromachining process. The simulation results show a maximum discrepancy of 2.6% relative to the experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.129-130
• /
• 2008

Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 % $H_2/N_2$, because the interface trap states at the poly-Si grain boundaries and at the gate oxide/poly-Si channel decreased.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1383-1385
• /
• 2009

This paper suggests that testing method and equipment structure to detect potential failures of LCD cells. LCD Cell Aging Tester is the unique process to detect failures related with ASG circuits. This system consists of four components that is Aging chamber, work table, probe contact unit, and pattern generator. The key factor of the concept is temperature aging and HVS driving. Complicated combination of test parameters including voltage, temperature and frequency provided practical burn-in conditions eligible for prediction of mass production.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.378-381
• /
• 2009

As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the $2^{nd}$ and the $4^{th}$ generation glass substrate.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.583-586
• /
• 2009

A 14.1" XGA (1024${\times}$768) LCD panel with Integrated Black Data Insertion (IBDI) has been world first developed successfully based on the integrated amorphous Silicon TFT gate driver which we previously introduced. The notable features compared with the conventional integrated a-Si TFT gate driver circuit are that the circuit consists of Dual buffer, Carry buffer structure, and Q-node cross charging for stable signal scanning characteristic and prevention of coupling between signal lines.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.745-748
• /
• 2007

Hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) were fabricated on a flexible metal substrate at $150\;^{\circ}C$. To increase the stability of the flexible a-Si:H TFTs, they were thermally annealed at $230\;^{\circ}C$. The field effect mobility was reduced because of the strain in a- Si:H TFT under thermal annealing.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.822-824
• /
• 2007

This paper investigated a gate driver circuit with amorphous silicon for mobile TFT-LCD. In the conventional circuit, the fluctuation of the off-state voltage causes the fluctuation of gate line voltages in the panel and then image quality becomes worse. Newly designed gate driver circuit with dynamic switching inverter and carry out signal reduce the fluctuation of the off-state voltage because dynamic switching inverter is holding the off-state voltage and the delay of carry signal is reduced. The simulation results show that the proposed a-Si:H gate driver has low noise and high stability compared with the conventional one.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.255-256
• /
• 2007

A A4 size black and white reflective plastic display was developed for out door application. For document readability, high resolution of 180ppi plastic TFT backplane and high reflectance electrophoretic front panel sheet was used. Preparation of display was held near $100^{\circ}C$ process on PEN substrate.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.257-260
• /
• 2007

Hydrogenated amorphous silicon thin film transistors were fabricated on a flexible metal substrate. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and gate electrode. This can recover the shifted-threshold voltage to an original value.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.10
• /
• pp.817-821
• /
• 2000

In this work, we have investigated the dependence of annealing temperature(T$\_$a/) on optical and electrical properties of amorphous hydrogenated SiC(a-SiC:H) films. The a-SiC:H films were deposited on corning glass and p-type Si(100) wafer by PECVD (plasma enhanced vapor deposition) using SiH$_4$+CH$_4$+N$_2$ gas mixture. The experimental results have shown that the optical energy band gap(E$\_$opt/)of the thin films annealed at high temperatures have shown that the graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.