Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Investigation of Annealing Effect for a-SiC:H Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

플라즈마 화학기상 증착방식으로 성장시킨 비정질 실리콘 카바이드 박막의 열처리 효과에 관한 특성분석

  • 박문기 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 김용탁 (성균관대학교 금속재료공학부) ;
  • 최원석 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 윤대호 (성균관대학교 금속재료공학과) ;
  • 홍병유 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Published : 2000.09.01
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Abstract

In this work, we have investigated the dependence of annealing temperature(T$\_$a/) on optical and electrical properties of amorphous hydrogenated SiC(a-SiC:H) films. The a-SiC:H films were deposited on corning glass and p-type Si(100) wafer by PECVD (plasma enhanced vapor deposition) using SiH$_4$+CH$_4$+N$_2$ gas mixture. The experimental results have shown that the optical energy band gap(E$\_$opt/)of the thin films annealed at high temperatures have shown that the graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

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