한국정보디스플레이학회:학술대회논문집
- 2007.08a
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- Pages.257-260
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- 2007
A substrate bias effect on the stability of a-Si:H TFT fabricated on a flexible metal substrate
- Han, Chang-Wook (LG.PHILIPS LCD R&D Center Anyang, School of Electrical Engineering, Seoul National University) ;
- Nam, Woo-Jin (LG.PHILIPS LCD R&D Center Anyang) ;
- Kim, Chang-Dong (LG.PHILIPS LCD R&D Center Anyang) ;
- Kim, Ki-Yong (LG.PHILIPS LCD R&D Center Anyang) ;
- Kang, In-Byeong (LG.PHILIPS LCD R&D Center Anyang) ;
- Chung, In-Jae (LG.PHILIPS LCD R&D Center Anyang) ;
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Han, Min-Koo
(School of Electrical Engineering, Seoul National University)
- Published : 2007.08.27
Abstract
Hydrogenated amorphous silicon thin film transistors were fabricated on a flexible metal substrate. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and gate electrode. This can recover the shifted-threshold voltage to an original value.