• 전기학회논문지
• /
• 제58권12호
• /
• pp.2474-2479
• /
• 2009

This paper presents an atmospheric microplasma-jet device for bio~medical application. The microplasma-jet device consists of four components; a thin Ni anode, porous alumina insulator, a stainless steel cathode and an aluminum case. The anode has 8 holes, and hole diameter and depth are $200 {\mu}m$ and $60 {\mu}m$, respectively. The discharge test was performed in atmospheric pressure using nitrogen gas and AC voltage at the optimum gas flow rate of 4 Vmin. The plasma-jet is ejected stably for the input voltage ranging from 5.5 to $9.5 kV_{p-p}$. The plasma becomes dense as the input voltage increases, which was verified by the hydrophilicity change of PMMA surface treated by the plasma. The temperature increasement of the aluminum film exposed to plasma-jet illustrates that the micro plasma-jet device is feasible for bio-medical application.

• 한국표면공학회지
• /
• 제50권6호
• /
• pp.447-454
• /
• 2017

Al1050 and Al7075 alloy specimens were exposed to atmospheric conditions for maximum 12 months and analyzed by Transmission Electron Microscopy (TEM) to characterize the early-stage corrosion behavior and thin surface oxide layers. By comparing of oxide films between Al1050 and Al7075 alloys, it is concluded that Al7075 has a relatively thicker surface oxide film than Al1050 but Al1050 has relatively more significant oxygen penetration through grain boundaries. The oxygen penetration through grain boundaries appeared to be influenced by intermetallic particles at the grain boundary. In the case of aluminum alloys, localized corrosion like pitting or intergranular corrosion should be considered as well as uniform corrosion when estimating the atmospheric corrosion rate.

• 한국생산제조학회지
• /
• 제24권5호
• /
• pp.475-480
• /
• 2015

Ultrasonic atomic force microscopy (Ultrasonic-AFM) has been used to investigate the elastic property of the ultra-thin coating layer in a thin-film system. The modified Hertzian theory was applied to predict the contact resonance frequency through accurate theoretical analysis of the dynamic characteristics of the cantilever. We coat 200 nm thick Aluminum and Titanium thin films on the substrate using the DC Magnetron sputtering method. The amplitude and phase of the contact resonance frequency of a vibrating cantilever varies in response to the local stiffness constant. Ultrasonic-AFM images were obtained using the variations in the elastic property of the materials. The morphology of the surface was clearly observed in the Ultrasonic-AFM images, but was barely visible in the topography. This research demonstrates that Ultrasonic-AFM is a promising technique for visualizing the distribution of local stiffness in the nano-scale thin coatings.

• 한국재료학회지
• /
• 제31권12호
• /
• pp.697-703
• /
• 2021

Aluminum nitride having a dense hexagonal structure is used as a high-temperature material because of its excellent heat resistance and high mechanical strength; its excellent piezoelectric properties are also attracting attention. The structure and residual stress of AlN thin films formed on glass substrate using TFT sputtering system are examined by XRD. The deposition conditions are nitrogen gas pressures of 1 × 10^-2, 6 × 10^-3, and 3 × 10^-3, substrate temperature of 523 K, and sputtering time of 120 min. The structure of the AlN thin film is columnar, having a c-axis, i.e., a <00·1> orientation, which is the normal direction of the glass substrate. An X-ray stress measurement method for crystalline thin films with orientation properties such as columnar structure is proposed and applied to the residual stress measurement of AlN thin films with orientation <00·1>. Strength of diffraction lines other than 00·2 diffraction is very weak. As a result of stress measurement using AlN powder sample as a comparative standard sample, tensile residual stress is obtained when the nitrogen gas pressure is low, but the gas pressure increases as the residual stress is shifts toward compression. At low gas pressure, the unit cell expands due to the incorporation of excess nitrogen atoms.

• 한국진공학회지
• /
• 제21권2호
• /
• pp.78-85
• /
• 2012

Poly-Monochloro-Para-Xylylene (Parylene-C)과 알루미늄 박막과의 접착력을 향상시키기 위하여 Duoplasmatron 이온원을 이용하여 발생시킨 아르곤 이온과 산소 이온을 Parylene-C 표면에 각각 조사하였다. 이온조사 시 이온에너지는 1 kV로 고정하였고 이온조사량은 $5{\times}10^{14}$에서 $1{\times}10^{17}/cm^2$까지 변화시켰다. 아르곤 이온과 산소 이온을 조사한 Parylene-C 박막의 물과의 접촉각은 초기 $78^{\circ}$에서 각각 $17^{\circ}$와 $9^{\circ}$까지 감소하였다. X선 광전자 스펙트럼을 이용하여 Parylene-C 표면에 이온빔 조사에 의하여 친수성 그룹이 형성되었음을 알 수 있었으며, 이 친수성 그룹들은 C-O 결합, C=O 결합 그리고 (C=O)-O 결합에 의한 것임을 알 수 있었다. Al 박막과 ${O_2}^+$ 이온에 의해 표면 개질된 Parylene-C 박막과의 접착력을 평가하기 위하여 cross cut tape test를 실시한 결과 접착력은 이온조사량이 증가할수록 향상됨을 알 수 있었다.

• 한국태양에너지학회 논문집
• /
• 제32권spc3호
• /
• pp.194-198
• /
• 2012

Crystalline silicon solar cell remains the major player in the photovoltaic marketplace with 80% of the market, despite the development of various thin film technologies. Silicon's excellent efficiency, stability, material abundance and low toxicity have helped to maintain its position of dominance. However, the cost of silicon materials remains a major barrier to reducing the cost of silicon photovoltaics. Using the crystalline silicon wafer with thinner thickness is the promising way for cost and material reduction in the solar cell production. However, the thinner the silicon wafer is, the worse bow phenomenon is induced. The bow phenomenon is observed when two or more layers of materials with different temperature expansion coefficiencies are in contact, in this case silicon and aluminum. In this paper, the solar cells were fabricated with different thicknesses of Al layer in order to reduce the bow phenomenon. With less amount of paste applications, we observed that the bow could be reduced by up to 40% of the largest value with 120 micron thickness of the wafer even though the conversion efficiency decrease by 0.5% occurred. Since the bowed wafers lead to unacceptable yield losses during the module construction, the reduction of bow is indispensable on thin crystalline silicon solar cell. In this work, we have studied on the counterbalance between the bow and conversion efficiency and also suggest the formation of enough back surface field (BSF) with thinner Al layer application.

• 한국정보통신학회논문지
• /
• 제7권2호
• /
• pp.250-254
• /
• 2003

본 논문에서는 2GHz 대역 RF 대역통과 필터 응용을 위한 FBAR 소자에 대한 연구를 발표한다. 본 연구의 FBAR 소자는 크게 상부 및 하부 전극 사이에 압전체(AlN)가 삽입되어 있는 공진부와 SiO2/W이 여러층으로 적층되어 있는 음향반사층 두 부분으로 구성되어 있다. RF sputtering 방법으로 증착된 AlN 박막은 c축이 기판에 수직한 정도가 우수한 c축 우선 배향성을 갖는다. 이때 결정립(grain)은 길고 얇은 주상형(columnar)을 보인다. 뿐만아니라, 우수한 품질계수(4300)와 반사손실(37.19 dB)도 얻어졌다.

• 한국세라믹학회지
• /
• 제40권4호
• /
• pp.354-359
• /
• 2003

The microwave dielectric characteristics of (1-x)(Al$\_$$\frac{1}{2}$/Ta$\_$$\frac{1}{2}$/)O$_2$-x(Mg$\_$1/3/Ta$\_$2/3/)O$_2$ (0$\leq$x$\leq$1.0) ceramics were investigated by crystalstructure, variations of ionic polarizability, and microstructures. As x increased, (1-x)(Al$\_$$\frac{1}{2}$/Ta$\_$$\frac{1}{2}$/)O$_2$-x(Mg$\_$1/3/Ta$\_$2/3/)O$_2$ transformed to tetragonal structure. Because the ionic radius of (Mg$\_$1/3/Ta$\_$2/3/)$\^$4+/was slightly bigger than one of (Al$\_$$\frac{1}{2}$/Ta$\_$$\frac{1}{2}$/)$\^$4+/, the cell parameters increased with increase of (Mg$\_$1/3/Ta$\_$2/3/)O$_2$concentration and coincided with prediction of the molecular additivity rule. As x increased, the compositions revealed ordered phase and were of single phase above 60 mol%. The increase of the ordered phase and grain size enhanced the Q and when ordering was completed at x over 0.6, the grain size was major factor for the increase in the a. Though the grain size increased, however, the porosity deteriorated the q. Therefore, the a depended on the order/disorder, the porosity, and the grain size in regular order.

• 한국전기전자재료학회논문지
• /
• 제20권10호
• /
• pp.859-863
• /
• 2007

Aluminum oxide films were deposited on n-type 6H-SiC(0001) substrates by RF magnetron sputtering technique for MIS devices applications. Well-behaved C-V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $4.6{\times}10^{10}/cm^2\;eV$ in the upper half of the bandgap. The gate leakage current densities of the MIS structures were about $10^{-8}A/cm^2$ and about $10^{-6}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for a ${\pm}1\;MV/cm$, respectively These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.207-207
• /
• 2010

알루미늄 양극산화 기술은 저가로 공정이 가능하고, 경제적이며 규칙적인 배열의 나노 미터 크기의 미세기공을 형성할 수 있다는 장점을 가지고 있다. 인가전압, 양극산화 용액의 종류, 용액의 농도 및 온도 등의 양극산화 조건을 변화시킴에 따라 나노 기공의 직경 및 길이, 밀도 조절이 용이하다. 알루미늄 판 (aluminum plate)을 이용한 양극산화 기술은 상대적으로 많이 알려져 있으나 알루미늄 박막을 이용한 양극산화기술은 아직도 확립되어 있지 않다. 본 실험에서는 실리콘 기판에 Al을 $5000{\AA}$와 $8000{\AA}$으로 증착시켜서 기판으로 이용하였다. 아주 얇은 두께의 Al은 작은 변화에도 민감하게 반응하기 때문에 공정 변수인 온도와 전압의 정밀한 제어가 되어야 나노 기공의 크기 조절이 가능한 것을 확인하였다.