• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.75-80
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• 2005

In this thesis, We Fabricated Cu thin films of 1000 $\AA$, 3000 $\AA$, and 6000 $\AA$ thickness on the single crystal sapphire, polycrystal alumina, and amorphous slide glass substrates deposited by electron beam evaporation(EBE) method. We investigated properties of resistivity and adhesion of these Cu thin films under various conditions, substrate temperature(room temperature, 10$0^{\circ}C$, 20$0^{\circ}C$ under vacuum) and annealing temperatures(400 $^{\circ}C$, 600 $^{\circ}C$ for 30 min after the deposition). We found that these adhesion was increased in order of slide glass, sapphire, and alumina. The adhesion of the Cu thin films on alumina was high value about 4 times, compared with that of the Cu thin films on slide glass. We found that these resistivities were decreased with increasing substrate temperature and thin film thickness. The resistivity(2.05 $\mu$Ω\ulcornercm) of the Cu thin films with 6000 $\AA$ thickness at 200 $^{\circ}C$ on the slide glass was low value, compared with that of aluminum(2.66 $\mu$Ω\ulcornercm).

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.36-39
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• 2002

Molybdena powder was heated at both 660$^{\circ}C$ and 700$^{\circ}C$ for half-hour in an evaporation-deposition device. The molybdena thin films deposited on the surfaces of alumina ceramics displayed two kinds of fractal aggregates, i.e., the stackings of ribbon-like crystals and ramified palm-like structures. It is revealed from the experimental results that the microstructures of these fractal aggregates depended strongly on their growth conditions. The dynamics of fractal growth of molybdena thin film is discussed.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.1
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• pp.43-48
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• 1998

The effect of mcirostructure on the electrical properties of yttria stabilized zirconia (YSZ) was analyzed by modeling layer arrangements and mixed phase structure. The YSZ thin films were deposited by RF magnetron sputtering using 30mol% YSZ and 8 mol% YSZ targets with yttrium pellets on porous alumina substrates. The structure, composition and electricla properties of the YSZ films were investigated as functions of sputtering conditons and layer arrangements by XRD, TEM, XPS and acimpedance spectroscopy. The results showed that the triple palyered YSZ films had highermicrohardness, lower compressive stress state and higher ionic conductivity by one order than single and double layered YSZ films. However, sputtered YSZ films have low conductivity compared to YSZ pellets or doctor bladed YSZ thin plates. These results were probably due to the influence of insulating alumina substrates, impractical for most stacking geometries and inductance induced by relatively long platinum, lead wire on YSZ conductivity.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.386-389
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• 2007

The dielectric properties of $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films have been investigated according to the substrates in order to optimize the their properties. MgO, r-plane sapphire, and poly-crystalline sapphire (Alumina) substrates have been used to deposite $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films by RF magnetron sputtering. The BST thin films deposited on the single crystal (100)MgO substrates have high tunability and low dielectric loss. These results are caused by a low misfit between the lattice parameters of the BST films and the substrate. The BST films deposited on r-plane sapphire have relatively high misfit, and the tunability of 17% and dielectric loss of 0.0007. To improve the dielectric properties of the BST films, the post-annealing methods has been introduced. The BST films deposited on (100)MgO, (1102)r-plane sapphire, and poly-crystalline sapphire substrates have best properties in post-annealing conditions of $1050^{\circ}C$, $1100^{\circ}C$, and $1150^{\circ}C$, respectively. The different optimal post-annealing conditions have been found according to the different misfits between the films and substrates, and thermal expansion coefficients. Moreover, the films deposited on alumina substrate which is relatively cheap have a good tunability properties of 23% by the post-annealing.

• Membrane Journal
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• v.23 no.4
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• pp.278-282
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• 2013

Zeolitic imidazolate frameworks (ZIFs) have been the focus of interest for their physical and chemical properties, especially, for their extraordinary gas separation properties. In this study, a novel and efficient method for the fabrication of continuous ZIF-7 film on ${\alpha}$-alumina substrate has been investigated. The electrospray deposition method was tried for the first time to prepare ZIF films directly without the necessity of prior substrate seeding. It has the advantage of depositing thin ZIF-7 films directly on the ${\alpha}$-alumina substrate by electrospraying the precursor solution. The ZIF-7 films have been characterized through XRD, FE-SEM, and single gas permeation tests.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.120-121
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• 2007

In this paper, ZnO thin films were deposited by pulsed laser deposition (PLD) on $Al_2O_3$ (alumina) at room temperature in various $O_2$ ambient. Rapid thermal annealing (RTA) has been performed at temperatures from $400^{\circ}C$ to $700^{\circ}C$. The effects of temperature and ambient on the structural property of ZnO films were examined by x-ray diffractometer (XRD) and atomic force microscopy (AFM), respectively. The results show that the (002)-oriented ZnO thin films on non-single crystal alumina were obtained in over 30mTorr ambient at all RTA temperatures including room temperature. The foil-width half maximum (FWHM) of (002) peak decreases as the RTA temperature increases, which indicates that ZnO thin films with RTA have improved crystalline quality.

• Journal of the Korean Ceramic Society
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• v.46 no.1
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• pp.24-29
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• 2009

The suspension of $Al_2O_3$ which has long-term stability was made by mechanical milling. Thin films were evaluated and made to use as coating materials. A particle size of the suspension manufactured was 98 nm when 2 mt% nitric acid was added. It indicated that viscosity of the suspension is 12 cps and that it had the long-term stability. Thickness which was from 200 nm to 600 nm of the thin films was able to be made by adjusting draw rate and organic additive. Cracks of thin films at room temperature were prevented by adding Ethyl cellulose from 0.5 wt% to 2 wt%. The thin film heated at $500^{\circ}C$ indicated a hydrophilic property against water and an excellent permeability against a visible ray.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• Membrane Journal
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• v.19 no.1
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• pp.19-24
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• 2009

Sol-gel process is relatively simple, easy to use, cheap to install, and results in thin coating layers with superior physical and gas barrier properties. Films coated by the sol-gel process can be used as insulating films or packaging films for foods, chemicals, drugs, and beverages, etc. In this study, alumina sol was synthesized from aluminum isopropoxide and silane coupling agent was added to make coating solutions. In addition, biaxially oriented polypropylene (BOPP) was coated using several alumina sol solutions and their oxygen permeabilities were measured. The experimental results indicate that in the best case, the oxygen permeability of coated film was reduced by 85% compared to that of pure BOPP.