• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.14-15
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• 2002

Iron nitride alloy films prepared in the form of laminated ${(Fe_{97}Al_3)}_{85}N_{15}/Al_2O_3$ multilayers (Ml's) due to excellent soft magnetic properties and high saturation magnetization [1, 2] are very promising materials for poles and shields in ultra high density thin film heads. The present work concerns the ferromagnetic (FM) coupling effect as a function of the thickness of $Al_2O_3$ spacers by analysis of the magnetic domain structure.

• Journal of the Korean Society of Industry Convergence
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• v.26 no.5
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• pp.743-750
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• 2023

Aluminum alloy is a material widely used in the aircraft industry. However, since it has relatively low hardness, strength and tribological properties, it is necessary to improve these properties. In this paper, a TiN thin film was coated on the surface of AL7075-T7351 using DC magnetron sputtering. The coating was performed by setting different deposition pressure, deposition time, and applied power. Then, the tribological properties of the thin film were investigated. As a result of the experiment, the hardness of the thin film was higher than that of the base material, and the specimen with the highest hardness had excellent friction coefficient, wear amount, and adhesive strength characteristics. Through this study, it was confirmed that the tribological characteristics of aluminum alloy can be improved by depositing thin films using DC magnetron sputtering.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.122-123
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• 2007

Bias voltage를 달리하여 cathodic arc plasma 방법으로 Si 기판 위에 성장시킨 TiCrAlSiN 코팅막의 미세구조를 투과전자현미경으로 관찰하였다. -200 V에서 0 V로 bias voltage가 변화함에 따라 'nano-multilayered' 구조가 무너지면서 '주상형(columnar)'구조로 코팅막의 미세구조가 변함을 알 수 있었고, EDS line scan을 통해 multilayer의 화학적 조성 변화를 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.772-775
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• 2003

The development of new improved type of dielectric materials on the conception of multiphase structure has been carried out in this paper. Metal alkoxides solutions were used for application of thin film by electrophoretic deposition technique. We succeeded in preparation of amorphous and composite dielectric films from Al alkoxides. Specific features of the preparation technique were considered. Microstructure of the films was examined as well as their dielectric properties. TEM analyses reveals that films deposited from aging sols and heat-treated at temperatures as low as $400^{\circ}C$ contain small whiskers of ${\delta}-Al_2O_3$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.76-76
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• 2002

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.889-894
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• 2001

2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.362-365
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• 2002

Hf thin films were deposited on bottom metal using a RF magnetron sputtering method followed by oxidation and annealing in O$_2$ and N$_2$ ambient, respectively. Various top metal electrodes (i.e., Al, Au, and Cu) were deposited by evaporation, and their roles on physical and electrical properties were investigated. Using the XRD, SEM and AFM techniques, we confirmed that the grain size of HfO$_2$ thin films enlarges as a function of oxidation temperature, increasing dielectric constant. However, other electrical properties (e.g., tan) deteriorateas a consequence. The dielectric constant and tan of HfO$_2$ thin films oxidized at 500 $^{\circ}C$ were 17-25 and 3${\times}$10-3 - 2x10-2, respectively, in the frequency range of 1 Hz to 1 MHz. The leakage current density was less than 1${\times}$10-8A/cm2 up to 0.7 MV/cm. In addition, electrical properties of HfO$_2$ thin films (e.g., the dielectric constant, leakage current and tan $\delta$) depend on top metal electrode. We showed that Al top metal electrode results in the best result.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.177-182
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• 2013

Transparent thin film transistors (TTFT) were fabricated on $N^+$ Si wafers. $SiO_2$, $Si_3N_4/SiO_2$ and $Al_2O_3/SiO_2$ grown on the wafers were used as gate insulators. The rf magnetron sputtered zinc tin oxide (ZTO) films were adopted as active layers. $N^+$ Si wafers were wet-oxidized to grow $SiO_2$. $Si_3N_4$ and $Al_2O_3$ films were deposited on the $SiO_2$ by plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), respectively. The mobility, $I_{on}/I_{off}$ and subthreshold swing (SS) were obtained from the transfer characteristics of TTFTs. The properties of gate insulators were analyzed by comparing the characteristics of TTFTs. The property variation of the ZTO TTFTs with time were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.68-69
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• 2007

We have prepared p-type ZnO:Al films in pure oxygen ambient on n-type Si (100) and homo buffer layers by RF magnetron sputtering system. Hall effect measurement shows that the film annealed at $600^{\circ}C$ possesses p-type conductivity and the film annealed $800^{\circ}C$ does not. PL spectra show different properties of p- and n-type ZnO film. The corresponding peaks of PL spectra of p- and n-type show at about same positions. The intensities of high photon energy of n-type film on buffer shows decreasing tendency.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.615-622
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• 1993

In order to increase chemical durability of thin films in binary system B2O3-SiO2 and Al2O3-SiO2 on the slide glass by the dip-coating technique from TEOS(Tetraethyl Orthosilicate) and boric acid or aluminum nitrate, phosphoric acid(5~20mol%) was added, respectively. Corrosion of acid and alkali of samples treated with 1N, HCl, NaOH and distilled water at 10$0^{\circ}C$ for 15 minute, were measured IR transmittance and variance of transmittance at visible range. Surface structure of thin film was investigated with SEM and formation of crystal phase according to additiion of phosphoric acid was measrued with XRD. In Al2O3-SiO2 system, change of remarkable characteristic was not obtained at the addition of P2O5 but transmittance of thin film was decreased with addition of P2O5 in B2O3-SiO2 system.