Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of Gate Insulators on the Operation of ZnO-SnO2 Thin Film Transistors

ZnO-SnO2 투명박막트랜지스터의 동작에 미치는 게이트 절연층의 영향

  • Cheon, Young Deok (Department of Electrical Engineering and ERI, Gyeongsang National University) ;
  • Park, Ki Cheol (Department of Semiconductor Engineering and ERI, Gyeongsang National University) ;
  • Ma, Tae Young (Department of Electrical Engineering and ERI, Gyeongsang National University)
  • 천영덕 (경상대학교 전기공학과 및 공학연구원) ;
  • 박기철 (경상대학교 반도체공학과 및 공학연구원) ;
  • 마대영 (경상대학교 전기공학과 및 공학연구원)
  • Received : 2013.01.21
  • Accepted : 2013.02.21
  • Published : 2013.03.01
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Abstract

Transparent thin film transistors (TTFT) were fabricated on $N^+$ Si wafers. $SiO_2$, $Si_3N_4/SiO_2$ and $Al_2O_3/SiO_2$ grown on the wafers were used as gate insulators. The rf magnetron sputtered zinc tin oxide (ZTO) films were adopted as active layers. $N^+$ Si wafers were wet-oxidized to grow $SiO_2$. $Si_3N_4$ and $Al_2O_3$ films were deposited on the $SiO_2$ by plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), respectively. The mobility, $I_{on}/I_{off}$ and subthreshold swing (SS) were obtained from the transfer characteristics of TTFTs. The properties of gate insulators were analyzed by comparing the characteristics of TTFTs. The property variation of the ZTO TTFTs with time were observed.

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References

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