• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.219-219
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• 2013

The effect of an electron blocking layer (EBL) on V-I curves in GaN/InGaN multiple quantum well is investigated. For the first time, we found that curves were intersected at 3.012 V and analyzed the reason for intersection. The forward voltage in LEDs with an p-AlGaN EBL is larger than without p-AlGaN EBL at low injection current because the Mg doping efficiency for p-GaN layer was higher than that of p-AlGaN layer. However, the forward voltage in LEDs with an p-AlGaN EBL is smaller than without p-AlGaN EBL at high injection current because the carriers overflow from the active layer when injection current increases in LEDs without p-AlGaN EBL and in case of LED with p-AlGaN EBL, the carriers are blocked by EBL.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.101-104
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• 2004

In this study AlN/Al thin films were prepared at various conditions, such as $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ from 0.6 to 0.9, a substrate temperature ranging from room temperature to $300^{\circ}C$ and working pressure 1mTorr. We estimated crystallographic characteristics and c-axis preferred orientations of AlN/Al thin films as function of Al electrode surface roughfness. The optimal processing conditions for Al electrode were found at substrate temperature of $300^{\circ}C$, sputtering power of 100W and a working pressure of 2mTorr. In these conditions, we obtained the c-axis preferred orientation of $AlN/Al/SiO_2/Si$ thin film about 4 degree.

• 한국표면공학회지
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• 제42권2호
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• pp.73-78
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• 2009

Quinary Ti-Al-Si-C-N films were successfully synthesized on SUS 304 substrates and Si wafers by a hybrid coating system combining an arc ion plating technique and a DC reactive magnetron sputtering technique. In this work, the effect of Si content on the microstructure and mechanical properties of Ti-Al-C-N films were systematically investigated. It was revealed that the microstructure of Ti-Al-Si-C-N coatings changed from a columnar to a nano-composite by the Si addition. Due to the nanocomposite microstructure of Ti-Al-Si-C-N coatings, the microhardness of The Ti-Al-Si-C-N coatings significantly increased up to 56 GPa. In addition the average friction coefficients of Ti-Al-Si-C-N coatings were remarkably decreased with Si addition. Therefore, Ti-Al-Si-C-N coatings can be applicable as next-generation hard-coating materials due to their improved hybrid mechanical properties.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.75-87
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• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

• 열처리공학회지
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• 제19권4호
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• pp.225-229
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• 2006

TiAlN coatings are available in various industry fields as a wear resistant coating for high-speed machining, due to its high hardness, excellent oxidation and corrosion resistance. The corrosion resistance of TiAlN multilayer coatings is better than that of single TiN coatings. Most of TiAlN coated layers were formed by heat treatment of coating layers with a non-stoichiometric $Ti_xAl_{1-x}N$. In this study, TiAlN coated layer was prepared by R.F magnetron sputtering and investigated the thermal behavior for heat treatment at various temperature in tube furnace. The formation of large particles with porous microstructure and phase change from HCP to FCC were observed on coated layer during heat treatment over $850^{\circ}C$ and it reduced the corrosion resistance of coated TiAlN layers.

• 한국재료학회지
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• 제15권11호
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• pp.730-734
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• 2005

Cr-Al-Si-N coatings were deposited on WC-Co substrates by a hybrid coating system of arc ion plating and DC magnet :on sputtering technique in $N_2/Ar$ mixture. The Cr-tll-Si-N coatings were synthesized with different Si contents. Their microstructure and mechanical properties were systematically investigated. The average size of crystallites largely decreases with the increase of Si content compared with Cr-Al-N. The microhardness of Cr-Al-Si-N coatings largely increases from 24 to 55 GPa. The enhanced hardness is believed to originate from the microstructural change by the fine composite microstructure of Cr-Al-N coatings with Si addition. The average friction coefficient of Cr-Al-Si-N coatings decreases from 0.84 to 0.45 with increasing Si content up to $16\;at.\%$.

• 한국결정성장학회지
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• 제16권4호
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• pp.157-161
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• 2006

혼합소스 HVPE(hydride vapor phase epitaxy) 방법을 이용하여 InGaN 층을 GaN 층이 성장된 사파이어 (0001) 기판 위에 성장하였다. InGaN 층을 성장하기 위해 금속 In에 Ga을 혼합하여 III족 소스로 이용하였으며 V족 소스로는 $NH_3$를 이용하였다. InGaN층은 금속 In에 Ga을 혼합한 소스와 HCl을 흘려 반응한 In-Ga 염화물이 다시 $NH_3$와 반응하도록 하여 성장하였다. XPS 측정을 통해 혼합소스 HVPE 방법으로 성장한 층이 InGaN 층임을 확인할 수 있었다. 선택 성장된 InGaN 층의 In 조성비는 PL과 CL을 통해서 분석하였다. 그 결과 In 조성비는 약 3%로 평가되었다. 또한, 4원 화합물인 InAlGaN 층을 성장하기 위해 In 금속에 Ga과 Al을 혼합하여 III족 소스로 사용하였다. 본 논문에서는 혼합소스 HVPE 방법에 의해 III족 소스물질로 금속 In에 Ga(Al)을 혼합한 소스를 이용하여 In(Al)GaN층을 성장할 수 있음을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.131-132
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• 2007

An AlGaN/GaN high electron mobility transistor(HEMT) was fabricated and the effect of photoelectrochemical oxidation of AlGaN/GaN surface was investigated. The oxidation of AlGaN surface was done in water at the bias of 10 V under the deep UV light illumination. The sheet resistance of the AlGaN/GaN structure was increased and gate leakage current of the HEMT was decreased by the oxidation. However, the transconductance of the HEMT was not degraded by the oxidation.

• 센서학회지
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• 제23권2호
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• pp.94-98
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• 2014

Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% $N_2$ /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the $N_2$ concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the $N_2$ concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. But in the case of 50% $N_2$ /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% $N_2/Ar$ atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.

• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.65-70
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• 2015

히트 싱크용 소재에 응용할 목적으로 단층금속과 2층 단면구조 복합재료에 대해 열전도 특성을 연구하였다. 단층금속으로는 알루미늄합금(Al6061)을 사용했으며, 2층 단면구조 복합재료로는 Al6061기판에 질화알루미늄(AlN)을 스크린 인쇄한 층상구조 복합재료를 선택하였다. 섬광법으로 측정한 열확산계수와 비열 및 밀도를 사용해서 열전도도를 측정하였다. 실험을 통해 얻은 열전도 특성 값을 참고문헌에 보고된 자료를 사용해 계산한 값과 비교하였다. Al6061 기판에 스크린인쇄법으로 AlN 후막을 형성시킨 2층 단면구조 복합재료 시편의 열전도도는 AlN 후막의 두께가 증가할수록 선형적으로 감소하였다. 측정한 복합재료의 열전도도는 두께가 $53{\mu}m$과 $163{\mu}m$일 때, 각각 $114.1W/m{\cdot}K$와 $72.3W/m{\cdot}K$로 나타났다. 또한, 스크린 인쇄한 AlN 후막의 열전도도를 열전도비저항에 대한 혼합법칙을 적용해서 평가하였다. AlN 후막의 두께가 $53{\mu}m$와 $163{\mu}m$인 경우, 스크린 인쇄한 AlN 후막의 열전도도는 각각 $9.35W/m{\cdot}K$와 $12.40W/m{\cdot}K$로 나타났다.