• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.209-209
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• 2012

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An additional doping was not applied for heterojunction solar cells due to the spontaneous junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedding Si heterojunction solar cell provided significantly enhanced efficiency of 9.23% as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme of the effective TCO film-embedding heterojunction Si solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.403-404
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• 2007

We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. ZnO doped the content of Al 2 wt% was used and the sputtering conditions were gas pressure 1mTorr and input power 100W. The electrical, structural and optical properties of AZO thin films were investigated. To investigate the as-deposited thin film properties, we employed four-point probe, UV/VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.213-213
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• 2010

We investigated the RF sputtering conditions for the deposition of AZO (Al doped ZnO) transparent conducting film on PET using the roll to roll vacuum coater. AZO thin films, sputtered at the various RF powers and working pressures, were studied for their structural, electrical and optical properties.. From the X-Ray diffraction patterns, we calculated the lattice stress using the Bragg equation. The compressive stress tends to decrease with the increase in film thickness. AZO thin film with the thickness of 152nm (1400W, 0.4Pa) exhibit the resistivity of $3.92*10-3{\Omega}/cm$ and the transmittance of 96.9% at 550nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.420-420
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• 2012

ZnO seed layer were deposited on quartz substrate by sol-gel method and prism-like Al-doped ZnO nanorods (AZO nanorods) were grown on ZnO seed layer by hydrothermal method with various Al concentration ranging from 0 to 2.0 at.%. Structural and optical properties of the AZO nanorods were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), photoluminescence (PL). The diameter of the AZO nanorods was smaller than undoped ZnO nanorods and its diameter of the AZO nanorods decreased with increasing Al concentration. In XRD spectrum, it was observed that stress and full width at half maximum (FWHM) of the AZO nanorods decreased and the 'c' lattice constant increased as the Al concentration increased. From undoped ZnO nanorods, it was observed that the green-red emission peak of deep-level emission (DLE) in PL spectra. However, after Al doping, not only a broad green emission peak but also a blue emission peak of DLE were observed.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1352-1353
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• 2008

In this study, aluminium - doped zinc oxide (ZnO:Al) transparent conducting film was deposited on PET(polyethylen terephthalate) substrate by r.f. magnetron sputtering method. PET substrate was surface-treated in an atmospheric pressure DBD(dielectric barrier discharge) plasma to increase deposition rate and to improve electrical propesties. Morphological changes by DBD plasma were obsered using contact angle measurement. The contact angle of water on PET was reduced from 62$^{\circ}$ to 42$^{\circ}$ by DBD plasma surface treatment. The plasma treatment also increased deposition rate and electrical propesties. The electrical resistivity as low as $4.97{\times}10^{-3}[{\Omega}-cm]$ and the deposition rate of 234[${\AA}$-m/min] were obtained in ZnO:Al film with surface treatment time of 5min, and 20min., respectively.

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.150-155
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• 2021

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 ℃. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10-4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.47.1-47.1
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.141-141
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.106-106
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.110-110
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• 2008