• 한국재료학회지
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• 제31권2호
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• 한국결정성장학회지
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• 제20권6호
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• pp.254-261
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• 2010

본 연구에서는 다결정 실리콘 태양전지 응용을 위한 다결정 실리콘 씨앗층의 제조와 그의 특성에 관한 연구를 수행하였다. 다결정 실리콘 씨앗층은 glass/Al/$Al_2O_3$/a-Si 구조를 이용하여 aluminum-induced layer exchange(ALILE) 고정으로 제조하였으며, 자연산화막부터 50 nm까지 다양한 크기로 $Al_2O_3$ 막두께를 변화시켜 알루미늄 유도 결정화 공정에서 막의 두께가 결정화 특성 및 결정결함, 결정크기에 미치는 영향에 대하여 조사하였다. 연구결과, ALILE 공정으로 생성된 다결정 실리콘막의 결함은 $Al_2O_3$ 막의 두께가 증가할수록 함께 증가한 반면, 결정화 정도와 결정입자의 크기는 $Al_2O_3$막의 두께가 증가할수록 감소하였다. 본 실험에서는 16 nm 두께 이하의 앓은 $Al_2O_3$ 막의 구조에서 평균 약 $10\;{\mu}m$ 크기의 sub-grain 결정립을 얻었으며, 결정성은 <111> 방향의 우선 배향성 특성을 보였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.40-47
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• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

• Korean Chemical Engineering Research
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• 제52권3호
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• pp.340-346
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• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• 한국표면공학회지
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• 제34권5호
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• pp.494-498
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• 2001

Ferromagnets(FM)-Al-$O_{x}$ -Ferromagnets (FM) tunneling junctions were evaluated by changing the fabricating conditions of an Al-X$/_{x}$ layer. The junction composed of a thicker Al-$O_{x}$ shows the low resistance and the stable MR ratio about 16% in a wide range of oxidation time. For the junctions with the thinner Al-$O_{x}$ , they showed a fast increase of the barrier width as an increase of an oxidation time and exhibited a strong bias dependence. As oxidation time increased, the coercivity ($H_{c}$ ) of bottom Co layer increased gradually due to the local oxidation of Co bottom layer at a interface. However, the small formation of Co oxide did not largely influence on the deterioration of MR ratio.

• 한국표면공학회지
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• 제36권2호
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• pp.128-134
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• 2003

Alloys of Ti-43%Al-2%W-0.1%Si were oxidized isothermally and cyclically between $900^{\circ}C$ and$ 1050^{\circ}C$, and their oxidation characteristics were studied. During isothermal tests, the alloys oxidized slowly up to 100$0^{\circ}C$, but fast at $1050^{\circ}C$. Though the scale adherence was not good above $900^{\circ}C$, the alloys displayed better oxidation behavior than unalloyed TiAl alloys. The oxide scales consisted primarily of an outer $TiO_2$ layer, intermediate $Al_2$$O_3$-rich layer, and an inner mixed layer of (TiO$_2$ $+Al_2$$O_3$). Tungsten was present mainly at the lower part of the oxide scale, while Si over the whole oxide scale.

• Journal of Welding and Joining
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• 제19권5호
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• pp.512-519
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• 2001

Sink roll has been used in molten Zn-0.2%Al alloy bath of continuous galvanizing line in sinking and stabilizing process of the steel strip in molten metal bath. In this process, although the scraper scraps off the sink roll surface, the dross compounds is builded up on the sink roll surface and the life time of the sink roll is shorten by the dross compounds. The present study was investigated the application of the spray coating layer on sink roll body for improving durability In molten Zn-0.2%Al alloy. Through the durability tests in molten Zn-0.2%Al alloy with various ceramic and cermet coating layer, the optimum bond and top coating material was obtained. As the results, the system of STS430F base metal, WC-l7Co bond and $ZrO_2-SiO_2$ top coating was clarified to be the best quality of durability in molten Zn-0.2%Al alloy.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.203-207
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• 1998

After etching Al-Cu alloy films using $SiCl_4/Cl_2/He/CHF_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS (X-ray photoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, the $SF_6$ plasma treatment subsequent to the etch has been carried out. A passivation layer is formed by fluorine-related compounds on etched Al-Cu alloy surface after $SF_6$ treatment, and the layer suppresses effectively the corrosion on the surface as the RF power of $SF_6$ treatment increases. The corrosion could be suppressed successfully with $SF_6$ treatment in the RF power of 150watts.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.511-514
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• 1987

Langmuir-Blodgett (LB) films of TCNQ(tetracyanoquinodimethane) with alkyl radical($C_{12}TCNQ$) were prepared on the sample of Al/LB film/Al type where Al are electrode, and polarization in LB film and dipolar moment of molecules in the films were measured by TSC. $Al_2O_3$ layer was yielded on the electrode by natural oxidation in air. According to the cooperation of $Al_2O_3$ dielectric layer and the polarization of $C_{12}TCNQ$-LB film, the macroscopic electrical field was yielded in LB film and $Al_2O_3$ layer. The field strength in $C_{12}TCNQ$-LB films was evaluated at about $1{\times}10^6{\sim}5{\times}10^6\;V/cm$.

• Journal of Welding and Joining
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• 제14권4호
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• pp.62-70
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• 1996

Al or Al-alloy have been known to be able to be claded on various materials by using explosive welding process, however, the intermetallic layer frequently formed along the interface have made this process very complicated. In this study, it was focussed to select the process variables, which can get rid of interfacial layer in the Al-claded steel plate. As a result, it was demonstrated that there was a certain range of explosive thickness which did not form the intermetallic phase as well as the non-bonded area. On the other hand, ultasonic tests performed for identifying the presence of interfacial layer nondestructively showed that it could be applied for the intended purpose but its result was weakly related with the microstructural quality of interface.