• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.211-214
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• 2008

GaN-based light-emitting diodes (LEDs) of a 405 nm wavelength have been fabricated on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). In order to reflect the photons, which are generated in the InGaN active region and emitted to the backside, to the front surface, a reflection layer was deposited onto the back of the substrate. Aluminum was used as the reflection layer and Al was deposited on the sample followed by Ti evaporation for firm adhesion of the reflection layer to the substrate. The light extraction efficiency was enhanced 52 % by adoption of the Ti-Al reflection layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.61.2-61.2
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• 2007

• Korean Journal of Crystallography
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• v.3 no.2
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• pp.111-119
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• 1992

Alexandrite crystals were grown by the Czochralski method. Relationships between or ystal quality and crystal growth factors such as pulling rate, rotation rate, purity of BeO po wders and evaporation loss compensation of BeO and Cr3+/Al3+substitution ratio were investigated. As a result, 1) high purity (more than 99.99p,) of BeO, as a raw material, is requisite condition for single crystal growth, 2) evaporation loss comp ensation is also requisite for high quality crystal growth. This compensation depends on pulling rate and Cr3+/Al3+ ratio. And 3) optimum pulling and rotation rate for alexandrite growth were 0.5∼1.0mm/hr and 20∼25rpm, respectively. Ale xandrite crystals were grown to (001) direction. Various types of defects were detected by the polarizing microscope and we discussed how to remove these defects. And room tempo rature absorption and fluorescence spectra were measured.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.435-444
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• 2001

WC-( $Ti_{1-x}$ A $l_{x}$) N coatings of constant changing Al concentration were deposited on S45C substrates by high-ionization sputtered PVD method. The Al concentration could be controlled by using evaporation source for Al and fixing the evaporation rate of the metals (i.e, WC- $Ti_{0.86}$A $l_{0.14}$N, WC- $Ti_{0.72}$A $l_{0.28}$N, and WC- $Ti_{0.58}$A $l_{0.42}$N). The corrosion behavior of WC-( $Ti_{1-x}$ A $l_{x}$)N coatings in a deaerated 3.5% NaCl solution was investigated by electrochemical corrosion tests and surface analyses. The measured galvanic corrosion currents between coating and substrate indicated that WC- $Ti_{0.72}$A $l_{0.28}$N coating showed the best resistance of the coating tested. The results of potentiodynamic polarization tests showed that the WC- $Ti_{0.72}$A $l_{0.28}$N coating deposited with 32W/c $m^2$ of Al target revealed higher corrosion resistance. This indicated that the WC- $Ti_{0.72}$A $l_{0.28}$N coating is effective in improving corrosion resistance. In EIS, the WC- $Ti_{0.72}$A $l_{0.28}$N coating showed one time constant loop and increased a polarization resistance of coating ( $R_{coat}$) relative to other samples. Compositional variations of WC-( $Ti_{1-x}$ A $l_{x}$)N coatings were analyzed by EDS and XRD analysis was performed to evaluate the crystal structure and compounds formation behavior. Surface morphologies of the films were observed using SEM and AFM. Scratch test was performed to measure film adhesion strength.strength. adhesion strength.strength.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.15-18
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• 2003

Aluminum oxide ($Al_2O_3$) materials were coated conformally on ZnO nanorods by atomic layer deposition (ALD). The ZnO nanorods were first synthesized on a Si(100) substrate from ball-milled ZnO powders by a thermal evaporation procedure. $Al_2O_3$ films were then deposited on these ZnO nanorods by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_2O$). Transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) images of the deposited ZnO nanorods revealed that amorphous $Al_2O_3$ cylindrical shells surround the ZnO nanorods. These TEM images illustrate that ALD has an excellent capability to coat any shape of nanorods conformally.

• Journal of the Korean Ceramic Society
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• v.27 no.8
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• pp.1043-1049
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• 1990

In this work, strength of ceramic fibers and monofilament composites were evaluated on the basis of Weibull's theory. The fibers used were β-SiC and γ-Al2O3 monofilament composites was fabricated by coating Al on the fiber surface by the use of vacuum evaporation method. Average tensile strength of ceramic fibers showed the tendency to linearly decrease with increasing gauge length. Also, Weibull moduli of ceramic fibers were decreased with increasing gauge length, Weibull modulus of β-SiC was 3.5 for 6-50mm, 2.8 for 100-200mm. Weibull modulus of γ-Al2O3 was 6.5 for 20-50mm, 6 for 100mm. Fibers in monofilament retained their original as-produced strength to exposure temperature of 400℃. However, tensile strength of both monofilament composites approved to remarkably degrade due to interfacial reaction-induced flaws on the fiber surface after thermal exposure of 600℃. In this case, Weibull modulus of monofilament composites was 2.7 for β-SiC and 5.2 for γ-Al2O3 respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.307-310
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• 1998

In this paper, $Al_2$O$_3$/MgO belayer was prepared with Electron-beam evaporation and the properties of the film was investigated in order to improve the property of MgO film, which is used for the protection layer in PDP(Plasma Display Panel). $Al_2$O$_3$/MgO belayer were improved of roughness and it were condensed by annealing, and the result of XPS analysis for $Al_2$O$_3$/MgO belayer unchanged binding energy. To investigate electric characteristics, discharge properties of $Al_2$O$_3$/MgO belayer were compared with discharge minimum voltage for MgO monolayer through Ar discharge experiments.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.628-631
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• 2002

$Al_2O_3$ capping layer and MgO protective layer were deposited by electron beam evaporation method using single crystal source. Thickness of the capping layer, $Al_2O_3$, was varied from 5 nm to 10 nm. Surface morphology was observed by SEM and AFM before and after hydration. And microstructure of deposited $Al_2O_3$ layer and chemical shift of electron binding energy were also observed by high resolution TEM and XPS, respectively, after hydration. From these results, it was found that Mg atoms diffused into $Al_2O_3$ layer, reacted with moisture and formed $Mg(OH)_2$ during hydration. As thickness of $Al_2O_3$ increased, extent of hydration increased. $Al_2O_3$ capped MgO thin films and uncapped MgO thin films were deposited on AC-PDP test panel to characterize discharge properties. Although $Al_2O_3$ has poor discharge properties rather than MgO, because of many hydrated species on the surface of MgO, similar discharge properties were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.175-175
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• 2008

투명전극으로 사용되고 있는 Indium tin oxide (ITO) 박막은 전기적 전도도와 기판과의 접확성, 화학적 안정성, 광투과율 등의 특성과 함께 우수한 전기 광학적 거동을 보이고 있다. 그러나 ITO는 고가의 재료이기 때문에 대체 투명전극으로 Al을 도핑한 ZnO 박막의 연구가 활발히 진행되고 있다. ZnO:Al 박막은 chemical vapor deposition, reactive magnetron sputtering, electron-beam evaporation, pulsed laser deposition 등의 당양한 방법을 이용하여 증착하였다. 그러나 최근 낮은 온도에서 대면적의 균일성과 우수한 특성 때문에 atomic layer depositon (ALD) 방법을 이용하여 많은 연구가 진행되고 있으며, 이런 투명전극은 태양전지를 위해 연구되어지고 있다. 따라서 본 연구에서는 ALD 방법으로 Al의 도핑 양을 조절하여, ZnO:Al 박막을 제조하여 그 특성을 평가하고, 또한 ZnO TFT를 제작하여 발표하고자 한다. ZnO와 ZnO:Al 박막은 실리콘과 유리 기판 위에 ALD (Lucida-D200, NCD Technology) 장치로 증착하였다. DEZn, TMA, $H_2O$는 ZnO와 ZnO:Al 박막을 증착하기 위한 전구체와 반응가스로 사용하였다. 증착된 박막은 XRD와 HRTEM을 이용하여 결정구조와 미세구조를 분석하였다. AFM과 4-point probe를 이용하여 증착된 박막의 표면 거칠기와 면저항을 관찰하였다. semiconductor parameter 분석기를 이용하여 제작된 ZnO TFT를 평가하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.62.1-62.1
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• 2010

CIS(CuInSe2)계 화합물 태양전지는 높은 광흡수계수와 열적 안정성 및 조성 조절을 통한 밴드갭 조절이 용이해 고효율 박막 태양전지로 각광 받고 있다. 또한 CIGS 태양전지는 기존의 유리기판 대신 유연한 기판을 사용해 flexible 태양전지 제조가 가능하다. 이러한 유연기판은 보통 stainless steel과 같은 금속 기판이 많이 사용되는데 기존의 soda-lime glass 기판과는 달리 금속기판에는 Na이 첨가되어 있지 않아 별도의 Na첨가를 필요로 한다. Na은 CIGS 흡수층의 조성조절을 용이하게 하여 태양전지의 변환 효율을 향상시키는 역할을 한다. 본 연구에서 기판은 Na이 첨가되어있지 않은 corning glass를 사용 하였으며 NaF를 이용해 Mo가 증착된 기판에 NaF의 두께를 달리하며 증착해 CIGS 흡수층의 grain 사이즈를 비교 하였으며 그 후 태양전지 소자를 제조해 광전특성을 분석하였다. 후면 전극으로 약60nm 두께의 Mo를 DC Sputtering 방법을 이용해 증착 하였다. buffer층으로는 약 50nm의 CdS층을 CBD방법을 이용하여 제조 하였으며 TCO 층으로 약 50nm의 i-ZnO와 약 450nm의 Al-ZnO를 RF Sputtering방법으로 증착 하였다. 마지막으로 앞면 전극으로 약 $1{\mu}m$의 Al을 Thermal Evaporation방법으로 증착하였다. 태양전지 소자의 면적은 $0.49cm^2$로 효율을 비교 분석하였다.