한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Effect of $Al_2O_3$ capping layer on properties of MgO protection layer for plasma display panel

  • Eun, Jae-Hwan (School of Material Science & Engineering, Seoul National Univ.) ;
  • Lee, Jung-Heon (School of Material Science & Engineering, Seoul National Univ.) ;
  • Kim, Soo-Gil (Department of Electronics Engineering, Kyungwon University) ;
  • Kim, Hyeong-Joon (School of Material Science & Engineering, Seoul National Univ.)
  • Published : 2002.08.21
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Abstract

$Al_2O_3$ capping layer and MgO protective layer were deposited by electron beam evaporation method using single crystal source. Thickness of the capping layer, $Al_2O_3$, was varied from 5 nm to 10 nm. Surface morphology was observed by SEM and AFM before and after hydration. And microstructure of deposited $Al_2O_3$ layer and chemical shift of electron binding energy were also observed by high resolution TEM and XPS, respectively, after hydration. From these results, it was found that Mg atoms diffused into $Al_2O_3$ layer, reacted with moisture and formed $Mg(OH)_2$ during hydration. As thickness of $Al_2O_3$ increased, extent of hydration increased. $Al_2O_3$ capped MgO thin films and uncapped MgO thin films were deposited on AC-PDP test panel to characterize discharge properties. Although $Al_2O_3$ has poor discharge properties rather than MgO, because of many hydrated species on the surface of MgO, similar discharge properties were observed.

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