• Tribology and Lubricants
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• v.35 no.6
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• pp.350-355
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• 2019

Surface energy is an important factor in determining the performance of application components in terms of preventing adhesion failure between thin films. In this regard, numerous attempts have been made to acquire the desired surface energy through chemical treatment or by using micro/nanostructures. However, such approaches are expected to provide extreme values of surface energy, which may not be suitable in achieving the enhanced performance of applications. In this study, we propose a method to control surface energy by using bilayer metallic film heterostructures. We measure the water contact angle of incompatible (Ni/Ag) and compatible (Zn/Ag) metal pairs under several experimental factors, including thickness, time, and temperature. Furthermore, we conduct Auger electron spectroscopy measurements to investigate the atomic concentration with respect to depth after the change in the water contact angle. The experimental results reveal that three parameters, namely, compatibility, film thickness, and environmental temperature, are major factors in controlling the water contact angle. Thus, we experimentally demonstrate that controlling these three parameters can provide the approximate desired water contact angle. This result is expected to aid in the performance enhancement of a wide range of application components, where control of surface energy is required.

• Journal of the Korean Applied Science and Technology
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• v.16 no.2
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• pp.127-133
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• 1999

New electroluminescent materials base on anthracene chromophore, [9.10-bis(${\alpha}$-naph -thylethenyl) anthracene (${\alpha}$-BNA)] were newly synthesized. The anthracene derivatives with bulky substituent possessed high melting point and they gave stable amorphous films through vacuum - sublimation methods. Three types of electroluminescent devices were fabricated with double layer and triple layer structure : ITO/TPD/emission layer/MgAg, ITO/emission layer/ OXD-7 and ITO/ TPD/ emission layer/OXD-7/MgAg, respectively. In three types of devices with the emissive layer of ${\alpha}$-BNA, efficient orange electroluminescence was observed. In the triple layer device whit a emitting layer of 20 nm thickness , maximum luminance was about 10000 cd/ $m^2$ at an applied voltage of 10v and maximum external quantum efficiency was 1.0%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.119-122
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• 2004

This paper discovers that we form holographic grating in AsGeSeS thin film. Holographic grating is not developed in the length of 10,20,40nm, while it is formed in the thin film of 80nm though it shows very low diffraction efficiency. On the contrary, holographic grating is established in every thin film of Ag(10nm)/AsGeSeS(10,20,40,80nm). Lattice in 10,20 nm thin film builds up, and immediately disappears. In the case of 40nm thin film, even if holographic grating is made up, it seems to have a low diffraction efficiency. Apart from 10,20,40nm, it shows the highest diffraction efficiency in the thin film of 80nm.

• Journal of the Korean Electrochemical Society
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• v.10 no.3
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• pp.229-232
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• 2007

An amperometric immunosensor for the determination of rabbit IgG is proposed. The immunoassay utilizes a screen-printed carbon electrode on which osmium redox polymer is electrodeposited. This immunoassay detects 0.1 ng/ml of rabbit IgG, which is ${\sim}10^2$ fold higher than the most sensitive enzyme amplified amperometric immunoassay. The assay utilizes a screen-printed carbon electrode which was pre-coated by a co-electrodeposited film of an electron conducting redox hydrogel and a rabbit IgG. The rabbit IgG in the electron conducting film conjugates captures, when present, the anti-rabbit IgG. The captured anti-rabbit-IgG is labeled with horseradish peroxidase (HRP) which catalyzes the two-electron reduction of $H_2O_2$ to water. Because the redox hydrogel electrically connects HRP reaction centers to the electrode, completion of the sandwich converts the film from non-electrocatalytic to electro-catalytic for the reduction of $H_2O_2$ to $H_2O$ when the electrode is poised at 200 mV vs. Ag/AgCl.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.10
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• pp.840-846
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• 1991

In case of the rapid thermal process by halogen lamps, an optical pyrometer is generally used to measure the temperature. It is, however, necessary to measure the temperature by the thermocouple when the process temperature is lower than 700$^{\circ}C$ and the correction of the temperature is required. Contact by the PdAg paste is commonly used out but in this case it is impossible to see the effect of surface states of the substrate, which is critical in the rapid thermal process. In this study, real temperature ramping speed of silicon substrates coveredwith various thin films such as SiO$_2$2, Si$_{3}N_{4}$, dopants, and conductive layers (Ti or Co) was investigated by a mechanical contact of the thermocouple. And the results were compared with the case in which the contact was made by the PdAg paste. Effect of process ambient was also studied. It was found that depending on the surface state, overshoot more than 100$^{\circ}C$ could occur. It was also found that in case of the substrate covered with conductive layers, mechanical contact might render the correct temperature.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.42 no.1
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• pp.7-12
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• 2005

It was analyzed that the vibration and frequency characteristics for quartz crystal using a finite element method, ANSYS. It was investigated that the resonant frequency of quartz crystal by fixing the diameter of quartz crystal for the various its thickness. There were also studied that the resonant frequency value with different electrode thin films of Au, Ag and Al. As the result of this study, the best condition for quartz crystal unit was determined by the finite element method. If the thickness of quartz crystal is smaller than 0.2 mm, the high frequency over 8.102 MHz was obtained. In addition, as to the change of resonant frequency on electrode thin film, Al turned out to be superior to Au or Ag in frequency response.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.826-830
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• 2015

Transparent Ag nanowire conducting thin films with high surface hardness were fabricated by bar coating method. When coating speed was changed from 35 mm/sec to 50 mm/sec, the transmittance of coated glass increased from 65.3% to 80.8% in visible light range and the surface resistance was changed from $10.1{\Omega}/sq$ to $23.3{\Omega}/sq$. The surface hardness and adhesion of thin film were 5H and 5B.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.570-574
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• 1999

In this paper, by using the electrophoresis, preparation of YBCO superconducting wire deposited on metal Ag base wire was studied with its Properties. YBCO Powder could be prepared by solid state reactions with calcining and sintering processes. Superconducting wire prepared on metal Ag wire used as cathode of deposition base could be also fabricated in the YBCO/acetone-dispersed solution to obtain several tens of re thick films. And then it could be used as superconducting wire for measurement after calcination, sintering and oxygen absorption processes. In the process of film deposition, a catalyst I$_2$added into the suspension solution was very useful for preparing thick film of YBCO, and BaF$_2$ of additive material was also necessary for preparing crack-free wire of YBCO superconductor. As a result, YBCO superconducting wire added 2~3wt.% of BaF$_2$\ulcorner with catalyst, 12 had better deposition condition for uniform and dense YBCO wires, and critical current density, Jc was calculated at the value of 1,458A/$\textrm{cm}^2$(more than 10$^{3}$A/$\textrm{cm}^2$ ,77K, o[T]) of 30${\mu}{\textrm}{m}$ thick sample by 4 point prove method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.590-593
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• 2004

본 논문에서는 $As_{40}Ge_{10}Se_{15}S_{35}$ (300nm)박막과 $As_{40}Ge_{10}Se_{15}S_{35}$ (300nm)/Ag(20nm)박막에 홀로그래피 격자를 형성시킨 후 Tg 온도$(240^{\circ}C)$를 기준으로 하여 유리질 천이온도(Tg) 온도 이하 $(190^{\circ}C)$와 이상$(270^{\circ}C)$에서 열처리 시킨 후의 회절효율 변화를 알아보았다. $As_{40}Ge_{10}Se_{15}S_{35}$ (300nm) 박막의 경우 $190^{\circ}C$ : 50%, $240^{\circ}C$ : 약80%, $270^{\circ}C$ : 약 98%의 회절효율 감소가 일어났으며 $As_{40}Ge_{10}Se_{15}S_{35}$(300nm)/Ag(20nm)박막에서는 Tg 온도 이하 즉 $190^{\circ}C$, $240^{\circ}C$ 에서는 회절효율의 변화가 없었으나 Tg온도 이상인 $270^{\circ}C$에서는 약 1.5배 증가한 회절효율을 나타내었다.

• Journal of Electrochemical Science and Technology
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• v.13 no.3
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• pp.377-389
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• 2022

The current global energy supply depends heavily on fossil fuels. This makes technology such as direct water splitting from harvesting solar energy in photoelectrochemical (PEC) systems potentially attractive due to its a promising route for environmentally benign hydrogen production. In this study, undoped and nickel-doped molybdenum oxide photoanodes (called photoanodes S₁ and S₂ respectively) were synthesized through electrodeposition by applying -1.377 V vs Ag/AgCl (3 M KCl) for 3 hours on an FTO-coated glass substrate immersed in molibdatecitrate aqueous solutions at pH 9. Scanning electron microscopy (SEM), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) were used for microstructural and compositional characterizations of the photoanodes. In addition, the optical and photoelectrochemical characterizations of these photoanodes were performed by UV-Visible spectroscopy, and linear scanning voltammetry (LSV) respectively. The results showed that all the photoanodes produced exhibit conductivity and catalytic properties that make them attractive for water splitting application in a photoelectrochemical cell. In this context, the photoanode S₂ exhibited better photocatalytic activity than the photoanode S₁. In addition, photoanode S₂ had the lowest optical band-gap energy value (2.58 eV), which would allow better utilization of the solar spectrum.