• 대한전자공학회논문지
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• 제20권1호
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• pp.22-26
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• 1983

열확산(thermal diffusion)법을 이용하여 면적이 3.36㎠인 P+N 전지와 P+NN+ 전지를 제작하였다. 100mW/㎠의 인공 조명에서 측정한 결과 940℃에서 15분 보론확산(boron Predeposition)을 하고, 800℃에서 20분 열처리(annealing)하여 제작한 P+N전지는 전면적(수광면적) 변환 효율이 13.4%(14.7%)이었다. 뒷면을 1050℃에서 인(Phosphorus)을 확산한 후, 앞면을 940℃에서 15분 보론 확산하고, 800℃에서 50분 열처리하여 만든 P+NN+전지의 전면적(수광면적) 변환 효율은 14.3%(15.6%)이었다. 뒷면의 인 확산으로 게더링(gettering) 작용과 BSF 효과에 의해서 P+NN+ 전지가 P+N전지보다 캐리어 수명이 약 2∼3배 증가되었다. 그리고 효율 개선을 위해 AR로팅, Ag전기도금, 미세한 그리드 패턴, 앞면 불순물 주입량 조절 등을 행하였다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.450-455
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• 2002

Cu-cored Sn-Ag solder balls were fabricated by coating pure Sn and Ag on Cu balls. The melting behavior and the solderability of the BGA joint with the Ni/Au coated Cu pad were investigated and were compared with those of the commercial Sn-Ag and Sn-Ag-Cu balls. DSC analyses clarified the melting of Cu-cored solders to start at a rather low temperature, the eutectic temperature of Sn-Ag-Cu. It was ascribed to the diffusion of Cu and Ag into Sn plating during the heating process. After reflow soldering the microstructures of the solder and of the interfacial layer between the solder and the Cu pad were analyzed with SEM and EPMA. By EDX analysis, formation of a eutectic microstructure composing of $\beta$-Sn, Ag$_3$Sn, ad Cu$_{6}$Sn$_{5}$ phases was confirmed in the solder, and the η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer was found to form at the interface between the solder and the Cu pad. By conducting shear tests, it was found that the BGA joint using Cu-cored solder ball could prevent the degradation of joint strength during aging at 423K because of the slower growth me of η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer formed at the solder, pad interface. Furthermore, Cu-cored multi-component Sn-Ag-Bi balls were fabricated by sequentially coating the binary Sn-Ag and Sn-Bi solders on Cu balls. The reflow property of these solder balls was investigated. Melting of these solder balls was clarified to start at the almost same temperature as that of Sn-2Ag-0.75Cu-3Bi solder. A microstructure composing of (Sn), Ag$_3$Sn, Bi and Cu$_{6}$Sn$_{5}$ phases was found to form in the solder ball, and a reaction layer containing primarily η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ was found at the interface with Ni/Au coated Cu pad after reflow soldering. By conducting shear test, it was found that the BGA joints using this Cu-core solder balls hardly degraded their joint shear strength during aging at 423K due to the slower growth rate of the η'-(Au, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer at the solder/pad interface.he solder/pad interface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.73-76
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• 1995

In this study, the slab waveguide was fabricated using potassium-nitride(KNO$_3$) or silver-nitride (AgNO$_3$) molten sources by ion-exchange process. The effective refractive indices of waveguide were measured by Prism-Coupling method. and The characteristics of waveguide(mode dispersion, effective diffusion depth. surface refractive index, diffusion coefficient, and refractive index profile etc,) were investigated by WKB method, In the case of potassium ion-exchange, the computer calculation showed that the refractive index profile of waveguide followed Gaussian function, the surface refractive index increased with ion-exchange time and the effective diffusion depth increased a little as ion-exchange time increased, while the surface refractive index of silver ion-exchanged waveguide decreased with ion-exchange time because of the ion depletion on the surface of waveguide, and the effective diffusion depth seriously with ion-exchange tim. Double ion-exchanged waveguide was fabricated by performing silver ion-exchange after potassium ion-exchange. Double ion-exchanged waveguide had a tight mode binding force since the surface refractive index was larger than single step ion-exchanged waveguide.

• 한국수소및신에너지학회논문집
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• 제22권4호
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• pp.458-464
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• 2011

Recently, one of the hydrogen production methods has attracted using dense metallic membrane. It has high hydrogen permeation and selectivity which hardly could adopt industrial product because of high cost, hydrogen embrittlment and thermal stability. Meanwhile, vanadium has high hydrogen solubility and it use to instead of Pd-Ag amorphous membrane. Aluminum carried out blocking hydrogen diffusion on grain boundary therefore protecting hydrogen embrittlement. Most of dense metallic membrane is solution diffusion mechanism. The solution diffusion mechanism was very similar hydrogen storing steps such as steps of metal hydride. Thus, V-Al composites were fabricated to use hydrogen induced mechanical alloying. The fabricated V-Al composites were characterized by XRD, SEM, EDS and simultaneous TG/DSC analyses. The hydrogenation behaviors were evaluated using a Sievert's type automatic PCT apparatus. The hydrogenation behaviors of V-Al composites was evaluated too low hydrogen stored capacity and fast hydrogenation kinetics. In PCI results, V-Al composites had low hydrogen solubility, in spite of that, hydrogen kinetics was calculated very fast and hydrogen absorption/desorption contents were same capacity.

• 한국표면공학회지
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• 제48권1호
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• pp.11-22
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• 2015

Pd alloy hydrogen membranes for hydrogen purification and separation need thermal stability at high temperature for commercial applications. Intermetallic diffusion between the Pd alloy film and the porous metal support gives rise to serious problems in long-term stability of Pd alloy membranes. Ceramic barriers are widely used to prevent the intermetallic diffusion from the porous metal support. However, these layers result in poor adhesion at the interface between film and barrier because of the fundamentally poor chemical affinity and a large thermal stress. In this study, we developed Pd alloy membranes having a dense microstructure and saturated composition on modified metal supports by advanced DC magnetron sputtering and heat treatment for enhanced thermal stability. Experimental results showed that Pd-Cu and Pd-Ag alloy membranes had considerably enhanced long-term stability owing to stable, dense alloy film microstructure and saturated composition, effective diffusion barrier, and good adhesive interface layer.

• 마이크로전자및패키징학회지
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• 제20권2호
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• pp.59-64
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• 2013

3차원 적층 패키지를 위한 Cu/Ni/Au/Sn-Ag/Cu 미세 범프의 열처리에 따른 금속간 화합물 성장 거동을 분석하기 위하여 in-situ SEM에서 $135^{\circ}C$, $150^{\circ}C$, $170^{\circ}C$의 온도에서 실시간 열처리 실험을 진행하였다. 실험 결과 금속간 화합물의 성장 거동은 열처리시간이 경과함에 따라 시간의 제곱근에 직선 형태로 증가하였고, 확산에 의한 성장이 지배적인 것을 확인 할 수 있었다. Ni/Au 층의 존재로 인해 Au의 확산으로 복잡한 구조의 금속간 화합물이 생성 된 것을 확인할 수 있다. 활성화 에너지는 $Cu_3Sn$의 경우 0.69eV, $(Cu,Ni,Au)_6Sn_5$경우 0.84 eV로 Ni이 포함된 금속간 화합물이 더 높은 것을 확인 하였으며, 확산 방지층 역할을 하는 Ni층에 의해 금속간 화합물 성장이 억제됨에 따라 신뢰성이 향상 될 것으로 사료된다.

• 마이크로전자및패키징학회지
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• 제29권3호
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• pp.55-61
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• 2022

본 연구에서는 용융온도가 중온계 무연 솔더인 Sn-3.0Ag-0.5Cu(SAC305)와 저온계 무연 솔더인 Sn-57Bi-1Ag를 사용하여 형성된 복합 무연 솔더 접합부의 특성에 대하여 보고 하였다. SAC305 솔더볼이 형성된 ball grid array(BGA) 패키지와 Sn-57Bi-1Ag 솔더 페이스트가 도포된 flame retardant-4(FR-4) 인쇄회로기판(printed circuit board, PCB)을 리플로우 솔더링 공정을 이용하여 복합 무연 솔더 접합부를 형성 하였다. 공정 온도 프로파일을 두 가지 형태로 달리하여 리플로우 솔더링 공정을 진행하였으며 리플로우 솔더링 공정 조건에 따른 계면 반응, 금속간화합물(intermetallic compound, IMC)의 형성, Bi의 확산 거동 등 복합 무연 솔더 접합부 계면 특성을 비교 분석 하였다. 또한, 열 충격 시험을 통하여 리플로우 솔더링 공정에 따른 복합 무연 솔더 접합부의 신뢰성 특성을 비교하고 열 충격 시험 전후 전단 시험을 진행하여 접합부의 기계적 특성 변화를 분석하였다.

• 마이크로전자및패키징학회지
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• 제12권4호통권37호
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• pp.307-313
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• 2005

선형구조의 시편을 사용하여 Sn96.5Ag3.0Cu0.5의 electromigration 특성을 살펴보고 공정 조성의 SnPb의 electromigration특성과 비교, 분석하였다. SnAgCu의 electromigration에 관한 특성 중 시간에 따른 물질의 이동 양상과 여러 가지 electromigration 매개변수 (활성화 에너지, 임계 전류밀도, 확산계수와 유효전하수의 곱)을 살펴보았다. 임계 전류 밀도는 $140^{\circ}C$에서 $2.38{\times}10^4A/cm^2$ 이고 이 값은 $140^{\circ}C$에서 electromigration에 의한 물질 이동이 발생하지 않는 최대 전류 밀도를 나타낸다. 활성화 에너지는 $110-160^{\circ}C$ 온도 범위에서 0.56 eV가 측정되었다. DZ$\ast$의 값은 $110^{\circ}C$에서 $3.12{\times}10^{-10}\;cm^2/s$, $125^{\circ}C$에서 $4.66{\times}10^{-10}\;cm^2/s$, $140^{\circ}C$에서 $8.76{\times}10^{-10}\;cm^2/s$, $160^{\circ}C$에서 $2.14{\times}10^{-9}cm^2/s$ 이었다. 그리고 SnAgCu와 공정 조성의 SnPb 물질의 electromigration 거동 특징은 크게 다른데, SnPb의 경우 음극에서 보이드(void) 형성이 발생하기 전에 잠복 시간이 존재하고 SnAgCu의 경우 잠복 시간이 존재하지 않는다는 점이다. 이는 각 원소들의 확산 기구(diffusion mechanism)의 차이에 기인한 것이라 생각된다.

• 대한화학회지
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• 제47권2호
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• pp.121-126
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• 2003

Cyclohexanone,과 tris(2-aminoethyl)amine을 이용하여 Schiff 연기 축합반응으로 tren의 유도체인 tris(2-cyclohexylaminoethyl)amine (L)을 합성하였다. 또한 합성한 tren의 유도체인 tris(2-cyclohexylaminoethyl)amine (L)과 Zn(II) 착물의 열역학적 특성과 안정도 상수, Zn(II)와의 착물 조성비 등을 순환전압전류법과 열량계법으로 측정하였다. Zn(II)과 [Zn(II)-L] 순환전압전류 곡선을 0${sim}$-1.5 V vs. Ag/AgCl의 가전압 범위에서 측정하였다. 금속인 경우, -1.02V와 -0.48V vs. Ag/AgCl에서 각각 환원피이크와 산화피이크가 나타났으며, 금속착물인 경우에는 -1.19V와 -0.45V vs. Ag/AgCl에서 각각 환원피이크와 산화피이크가 나타났다. 또한 피이크 전류(IP)는 주사속도의 평방근 $(v^{1/2})$에 비례하였으며 이것은 전류의 유형이 확산 지배적인 전류임을 나타낸다. 그리고 [Zn-L] 착물에 대해서 전압전류법적으로 구한 안정도상수는 logK$_f$ = 5.8, 결합비는 1:1을 나타내었다. 또한 열량계법적으로 [Zn-L] 착물의 열역학적 파라메타를 조사한 결과, 리간드 L과 Zn(II)는 1:1의 4 배위수를 가지는 착물을 이룬다는 것을 알 수 있었고, 이때 25 ${\circ}$C에서 logK=5.4, ${\Delta}H$= -53.0 kJ/mol, ${\Delta}$G의 값은 -31.1 kJ/mol이었으며 T${\Delta}$S는 -21.9 J/K${\cdot}$mole이었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2004년도 ISMP Pb-free solders and the PCB technologies related to Pb-free solders
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• pp.233-241
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces strictly related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.