• Title/Summary/Keyword: Active Bias Circuit

Search Result 51, Processing Time 0.034 seconds

LNA Design Uses Active and Passive Biasing Circuit to Achieve Simultaneous Low Input VSWR and Low Noise (낮은 입력 정재파비와 잡음을 갖는 수동 및 능동 바이어스를 사용한 저잡음증폭기에 관한 연구)

  • Jeon, Joong-Sung
    • Journal of Advanced Marine Engineering and Technology
    • /
    • v.32 no.8
    • /
    • pp.1263-1268
    • /
    • 2008
  • In this paper, the low noise power amplifier for GaAs FET ATF-10136 is designed and fabricated with active bias circuit and self bias circuit. To supply most suitable voltage and current, active bias circuit is designed. Active biasing offers the advantage that variations in the pinch-off voltage($V_p$) and saturated drain current($I_{DSS}$) will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets a gate-source voltage($V_{gs}$) for the desired drain voltage and drain current. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA, suitable for input stage matching and gate source bias. The LNA is fabricated on FR-4 substrate with active and self bias circuit, and integrated in aluminum housing. As a results, the characteristics of the active and self bias circuit LNA implemented more than 13 dB and 14 dB in gain, lower than 1 dB and 1.1 dB in noise figure, 1.7 and 1.8 input VSWR at normalized frequency $1.4{\sim}1.6$, respectively.

Low Noise and High Linearity GaAs LNA MMIC with Novel Active Bias Circuit for LTE Applications

  • Ryu, Keun-Kwan;Kim, Yong-Hwan;Kim, Sung-Chan
    • Journal of information and communication convergence engineering
    • /
    • v.15 no.2
    • /
    • pp.112-116
    • /
    • 2017
  • In this work, we demonstrated a low noise and high linearity low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with novel active bias circuit for LTE applications. The device technology used in this work relies on a process involving a $0.25-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT). The LNA MMIC with a novel active bias circuit has a small signal gain of $19.7{\pm}1.5dB$ and output third order intercept point (OIP3) of 38-39 dBm in the frequency range 1.75-2.65 GHz. The noise figure (NF) is less than 0.58 dB over the full bandwidth. Compared with the characteristics of the LNA MMIC without using the novel active bias circuit, the OIP3 is improved about 2-3 dBm. The small signal gain and NF showed no significant change after using the active bias circuit. The novel active bias circuit indeed improves the linearity performance of the LNA MMIC without degradation.

the Active Current Bias Control using Flyback Converter (Flyback Converter를 이용한 Active Current Bias 제어)

  • Hwang Seon-Nam;Lim Sung-Kyoo;Lee Jun-Young
    • Proceedings of the KIPE Conference
    • /
    • 2006.06a
    • /
    • pp.84-87
    • /
    • 2006
  • 본 연구는 Current Mirror에 있어서 Active Current Bias에 관하여 기술하였다. Current mirror에서 Active Current Bias를 걸어주는 보편적인 방법은 Current Bias단에 저항을 연결하여 저항값을 조절함으로 해서 Current를 제어하는 방법을 사용한다. Reference 전류를 제어하는데 있어 새로이 제안하는 것은 Flyback Converter를 이용하여 Acitve Current Bias를 제어 하려 한다. 트랜지스터를 이용하여 Current Mirror Circuit를 구성하고 Current Bias 측에 Flyback Converter Circuit을 연결한다. Flyback Converter의 PWM의 Duty Ratio를 조절함으로 해서 전류를 제어하는 특징을 이용하여 Active Current Bias를 제어한다.

  • PDF

A Study of Suppression Current for LDMOS under Variation of Temperature (온도변화에 따른 LDMOS의 전류변동 억제에 관한 연구)

  • Jeon, Joong-Sung
    • Journal of Advanced Marine Engineering and Technology
    • /
    • v.30 no.8
    • /
    • pp.901-906
    • /
    • 2006
  • In this paper, the power amplifier using active bias circuits for LDMOS(Lateral Diffused Metal Oxide Semiconductor) MRF-21180 is designed and fabricated. According to change the temperature, the gate voltage of LDMOS is controlled by the fabricated active bias circuits which is made of PNP transistor to suppress drain current. The driving amplifier using MRF-21125 and MRF-21060 is made to drive the LDMOS MRF-21180 power amplifier. The variation of current consumption in the fabricated 60 watt power amplifier has an excellent characteristics of less than 0.1 A, whereas a passive biasing circuit dissipates more than 0.5 A. The implemented power amplifier has the gain over 9 dB, the gain flatness of less than $\pm$0.1 dB and input and output return loss of less than -6 dB over the frequency range 2.11 $\sim$ 2.17 GHz. The DC operation point of this power amplifier at temperature variation 0 $^{\circ}C$ to 60 $^{\circ}C$ is fixed by active bias circuit.

Design and Fabrication of the One-Chip MMIC Mixer using a Newly Proposed Bias Circuit for L-band (새로운 바이어스 회로를 적용한 L-band용 One-Chip MMIC 믹서의 설계 및 제작)

  • 신상문;권태운;신윤권;강중순;최재하
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.13 no.6
    • /
    • pp.514-520
    • /
    • 2002
  • In this paper, the study of a design and fabrication of the receiver MMIC mixer for L-band application is described. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The conversion gain of the mixer is -14 dB, IIP3 is approximately 4 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.4\;mm{\times}1.4\;mm$.

Ku-Band Power Amplifier MMIC Chipset with On-Chip Active Gate Bias Circuit

  • Noh, Youn-Sub;Chang, Dong-Pil;Yom, In-Bok
    • ETRI Journal
    • /
    • v.31 no.3
    • /
    • pp.247-253
    • /
    • 2009
  • We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 ${\mu}m$ GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.

  • PDF

A High Speed and Low Power SOI Inverter using Active Body-Bias (활성 바디 바이어스를 이용한 고속, 저전력 SOI 인버터)

  • 길준호;제민규;이경미;이종호;신형철
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.35D no.12
    • /
    • pp.41-47
    • /
    • 1998
  • We propose a new high speed and low power SOI inverter with dynamic threshold voltage that can operate with efficient body-bias control and free supply voltage. The performance of the proposed circuit is evaluated by both the BSIM3SOI circuit simulator and the ATLAS device simulator, and then compared with other reported SOI circuits. The proposed circuit is shown to have excellent characteristics. At the supply voltage of 1.5V, the proposed circuit operates 27% faster than the conventional SOI circuit with the same power dissipation.

  • PDF

Analyses of temperature change of a u-bolometer in Focal Plane Array with CTIA bias cancellation circuit (CTIA 바이어스 상쇄회로를 갖는 초점면 배열에서 마이크로 볼로미터의 온도변화 해석)

  • Park, Seung-Man
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.60 no.12
    • /
    • pp.2311-2317
    • /
    • 2011
  • In this paper, we study the temperature change of a ${\mu}$-bolometer focal plane array with a capacitive transimpedance amplifier bias cancellation circuit. Thermal analysis is essential to understand the performance of a ${\mu}$-bolometer focal plane array, and to improve the temperature stability of a focal plane array characteristics. In this study, the thermal analyses of a ${\mu}$-bolometer and its two reference detectors are carried out as a function of time. The analyses are done with the $30{\mu}m$ pitch $320{\times}240$ focal plane array operating of 60 Hz frame rate and having a columnwise readout. From the results, the temperature increase of a ${\mu}$-bolometer in FPA by an incident IR is estimated as $0.689^{\circ}C$, while the temperature increase by a pulsed bias as $7.1^{\circ}C$, which is about 10 times larger than by IR. The temperature increase of a reference detector by a train of bias pulses may be increased much higher than that of an active ${\mu}$-bolometer. The suppression of temperature increase in a reference bolometer can be done by increasing the thermal conductivity of the reference bolometer, in which the selection of thermal conductivity also determines the range of CTIA output voltage.

Design of the Low Noise Amplifier and Mixer Using Newly Bias Circuit for S-band (새로운 바이어스 회로를 적용한 S-band용 저잡음 증폭기 및 믹서의 One-Chip 설계)

  • Kim Yang-Joo;Shin Sang-Moon;Choi Jae-Ha
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.16 no.11 s.102
    • /
    • pp.1114-1122
    • /
    • 2005
  • In this paper, the study of a design, fabrication and measurement of the receiver MMIC LNA, mixer for S-band application is described. The LNA is designed by 2-stage common source. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The LNA has 15.51 dB-gain and 1.02dB-Noise Figure at 2.1 GHz. The conversion gain of the mixer is -12 dB, IIP3 is approximately 4.25 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.2[mm]\times1.4[mm]$.

A Study on Design and Implementation of Low Noise Amplifier for Satellite Digital Audio Broadcasting Receiver (위성 DAB 수신을 위한 저잡음 증폭기의 설계 및 구현에 관한 연구)

  • Jeon, Joong-Sung;You, Jae-Hwan
    • Journal of Navigation and Port Research
    • /
    • v.28 no.3
    • /
    • pp.213-219
    • /
    • 2004
  • In this paper, a LNA(Low Noise Amplifier) has been developed, which is operating at L-band i.e., 1452∼1492 MHz for satellite DAB(Digital Audio Brcadcasting) receiver. The LNA is designed to improve input and output reflection coefficient and VSWR(Voltage Standing Wave Ratio) by balanced amplifier. The LNA consists of low noise amplification stage and gain amplification stage, which make a using of GaAs FET ATF-10136 and VNA-25 respectively, and is fabricated by hybrid method. To supply most suitable voltage and current, active bias circuit is designed Active biasing offers the advantage that variations in $V_P$ and $I_{DSS}$ will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets $V_{gs}$ for the desired drain voltage and drain current. The LNA is fabricated on FR-4 substrate with RF circuit and bias circuit, and integrated in aluminum housing. As a reults, the characteristics of the LNA implemented more than 32 dB in gain. 0.2 dB in gain flatness. lower than 0.95 dB in noise figure, 1.28 and 1.43 each input and output VSWR, and -13 dBm in $P_{1dB}$.