• Title/Summary/Keyword: Abrasives

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A Study on the Characteristics of Internal-Face Magnetic Abrasive Finishing for Titanium Pipe (타이타늄 파이프의 내면 자기연마 가공에 관한 연구)

  • Li, Li-Hai;Mun, Sang-Don;Kim, Young-Whan;Park, Won-Ki;Yang, Gyun-Eui
    • Journal of the Korean Society for Precision Engineering
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    • v.28 no.6
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    • pp.701-708
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    • 2011
  • Although Titanium material has superior properties, it belongs to difficult-to-machine materials. The present research applies magnetic abrasive finishing to precision machining of internal-face of titanium pipes, and analyzed & assessed the influence of grinding conditions on magnetic abrasive effects through the removed amount and surface roughness of materials. There was the influence on grinding properties according to change of rotational speed, a total input of mixed powder and an input of grinding liquid, and when the total input, rotational speed and ratio of electrolytic iron versus magnetic abrasives are 8g and 1000rpm, it was most advantageous in aspects of surface roughness and material removal amount, and the grinding liquid remarkably improved the surface roughness and material removal amount only with addition of trace amounts of light oil rather than dry machining conditions. And a result of considering the influence on grinding properties by using an inert gas (Argon gas) for improving grinding properties of the internal-face of titanium pipe, the present research has obtained improvement effects in the removal amount and surface roughness through utilization of an inert gas.

A Study on the Correlation between Temperature and CMP Characteristics (CMP특성과 온도의 상호관계에 관한 연구)

  • Gwon, Dae-Hui;Kim, Hyeong-Jae;Jeong, Hae-Do;Lee, Eung-Suk;Sin, Yeong-Jae
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.10
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    • pp.156-162
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    • 2002
  • There are many factors affecting the results of CMP (Chemical Mechanical Polishing). Among them, the temperature is related to the removal rate and WIWNU (Within Wafer Non-Uniformity). In other words, the removal rate is proportional to the temperature and the variation of temperature distribution on a pad affects the non-uniformity within a wafer. In the former case, the active chemistry improves the rate of chemical reaction and the removal rate becomes better. But, there are not many advanced studies. In the latter case, a kinematical analysis between work-piece and pad can be obtained. And such result analysed from the mechanical aspect can be directly related to the temperature distribution on a pad affecting WIWNU. Meanwhile, the temperature change affects the quantities of both slurry and pad. The change of a pH value of the slurry chemistry due to a temperature variation affects the surface state of an abrasive particle and hence the agglomeration of abrasives happens above the certain temperature. And the pH alteration also affects the zeta potential of a pad surface and therefore the electrical force between pad and abrasive changes. Such results could affect the removal rate and etc. Moreover, the temperature changes the 1st and 2nd elastic moduli of a pad which are closely related to the removal rate and the WIWNU.

Development of the Magnetic Abrasive Using Sr-Ferrite and GC (Sr-Ferrite와 GC를 이용한 자기연마재 개발)

  • Yun, Yeo-Kwon;Kim, Sang-Baek;Kim, Hee-Nam
    • Journal of the Korean Society of Safety
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    • v.26 no.2
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    • pp.13-19
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    • 2011
  • The magnetic polishing is the useful method to finish using magnetic power of magnet. That method is one of precision polishing techniques and has an aim of the clean technology using for the pure of gas and inside of the clean pipe. The magnetic abrasive polishing method is not so common for machine that it is not spreaded widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper deals with development of the magnetic abrasive using Sr-Ferrite. In this development, abrasive grain GC used to resin bond fabricated low temperature. And Sr-Ferrite of magnetic abrasive powder fabricated that Sr-Ferrite was crused into 200 mesh. The XRD analysis result show that only GC abrasive and Sr-Ferrite crystal peaks detected which explains resin bond was not any more chemical reaction. From SEM analysis it is found that GC abrasive and Sr-Ferrite were strong bonding with each other by bond. The magnetic polishing is performed by polishing the surface of pipe by attracting magnetic abrasives with magnetic fields. This can be widely applied for finishing machinery fabrications such as various pipes and for other safety processes. In this paper, we could have investigated in to the changes of the movement of magnetic abrasive grain. In reference to this result, we could have made the experiment which is set under the condition of the magnetic flux density, polishing velocity according to the form of magnetic brush.

Formation of Optical Fiber Preform Using Octamethylcyclotetrasiloxane (Octamethylcyclotetrasiloxane를 이용한 광섬유 클래드 프리폼 형성)

  • Choi, Jinseok;Lee, Tae Kyun;Park, Seong Gyu;Lee, Ga Hyoung;Jun, Gu Sik;An, Sung Jin
    • Korean Journal of Materials Research
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    • v.28 no.1
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    • pp.6-11
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    • 2018
  • There are various manufacturing processes for pure $SiO_2$ that is used as abrasives, chemicals, filters, and glasses, and in metallurgy and optical industries. In the optical fiber industry, to produce $SiO_2$ preform, $SiCl_4$ is utilized as a raw material. However, the combustion reaction of $SiCl_4$ has caused critical environmental issues, such as ozone deficiency by chlorine compounds, the greenhouse effect by carbon dioxide and corrosive gas such as hydrochloric acid. Thus, finding an alternative source that does not have those environmental issues is important for the future. Octamethylcyclotetrasiloxane (OMCTS or D4) as a chlorine free source is recently promising candidate for the $SiO_2$ preform formation. In this study, we first conducted a vaporizer design to vaporize the OMCTS. The vaporizer for the OMCTS vaporization was produced on the basis of the results of the vaporizer design. The size of the primary particle of the $SiO_2$ formed by OMCTS was less than 100 nm. X-ray diffraction patterns of the $SiO_2$ indicated an amorphous phase. Fourier-transform infrared spectroscopy analysis revealed the Si-O-Si bond without the -OH group.

CMP of BTO Thin Films using $TiO_2$ and $BaTiO_3$ Mixed Abrasive slurry ($BaTiO_3$$TiO_2$ 연마제 첨가를 통한 BTO박막의 CMP)

  • Seo, Yong-Jin;Ko, Pil-Ju;Kim, Nam-Hoon;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.68-69
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    • 2005
  • BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant. It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO thin film using the$ BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%)below 5% was obtained in each abrasive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

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W Chemical Mechanical Polishing (CMP) Characteristics by oxidizer addition (산화제 첨가에 따른 W-CMP 특성)

  • Park, Chang-Jun;Seo, Yong-Jin;Lee, Kyoung-Jin;Jeong, So-Young;Kim, Chul-Bok;Kim, Sang-Yong;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.46-49
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    • 2003
  • Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.

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Characteristic of EP-MAP for Deburring of Microgroove using EP-MAP (전해-자기 복합 가공을 이용한 미세 그루브형상의 가공 특성에 관한 연구)

  • Kim, Sang Oh;Son, Chul Bae;Kwak, Jae Seob
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.37 no.3
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    • pp.313-318
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    • 2013
  • Magnetic abrasive polishing is an advanced deburring process for nonmagnetic materials and micropattern products that have non-machinability characteristics. Despite these advantages, there are some problems with using MAP for deburring. MAP has introduced geometric errors into microgrooves because of an over-cutting force caused by uncontrolled magnetic abrasives in the MAP tool. Thus, in this study, to solve this problem, an EP (electrolyte polishing)-MAP hybrid polishing process was developed for deburring microgrooves in an STS316 material. In addition, an evaluation of EP-MAP for the deburring of microgrooves was carried out by profiling the burrs. The results of the experiment showed geometric errors after the deburring process using MAP. However, in the case of EP-MAP, no geometric error was observed after the process because of the lower material removal rate in EP-MAP.

CMP of BTO Thin Films using Mixed Abrasive slurry (연마제 첨가를 통한 BTO Film의 CMP)

  • Kim, Byeong-In;Lee, Gi-Sang;Park, Jeong-Gi;Jeong, Chang-Su;Gang, Yong-Cheol;Cha, In-Su;Jeong, Pan-Geom;Sin, Seong-Heon;Go, Pil-Ju;Lee, U-Seon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.05a
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    • pp.101-102
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    • 2006
  • BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant, It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the sell-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS). respectively. The removal rate of BTO thin film using the $BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%.

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A Study on Slurry Isolation Through Chemical Processing, with Comparative Analysis and Validation (화학적 처리를 적용한 Slurry 분리 및 비교분석 검증 연구)

  • Na, Wonshik
    • Journal of Digital Contents Society
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    • v.14 no.1
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    • pp.35-40
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    • 2013
  • The use of slurry with a mix of abrasives and coolant for making Wire Saw in the photovoltaic industry has sharply increased with the semiconductor wafer. In this paper, the slurry was isolated, purified and dried by microwave drying method with high-purity silicon carbide powder obtained through chemical processing. Dried slurry bulk was first pulverized and chemical treatment was applied to produce powder. The produced slurry powder was then analyzed by going through the following analysis; thermal analysis, particle size analyses: SEM shots, elemental analysis, XRF and XRD. The results of this study found the recovery rate of the power obtained though the chemical processing to be higher than the one obtained from mineral processing. The results anticipate infrastructure building and active responses to increasingly stronger domestic and international environmental regulations through the integration and recycling of large amounts of slurry in the photovoltaic industry.

Use of Adaptive Meshes in Simulation of Combustion Phenomena

  • Yi, Sang-Chul;Koo, Sang-Man
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06b
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    • pp.285-309
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    • 1996
  • Non oxide ceramics such as nitrides of transition metals have shown significant potential for future economic impact, in diverse applications in ceramic, aerospace and electronic industries, as refractory products, abrasives and cutting tools, aircraft components, and semi-conductor substrates amid others. Combustion synthesis has become an attractive alternative to the conventional furnace technology to produce these materials cheaply, faster and at a higher level of purity. However he process os highly exothermic and manifests complex dynamics due to its strongly non-linear nature. In order to develop an understanding of this process and to study the effect of operational parameters on the final outcome, numerical modeling is necessary, which would generated essential knowledge to help scale-up the process. the model is based on a system of parabolic-hyperbolic partial differential equations representing the heat, mass and momentum conservation relations. The model also takes into account structural change due to sintering and volumetric expansion, and their effect on the transport properties of the system. The solutions of these equations exhibit steep moving spatial gradients in the form of reaction fronts, propagating in space with variable velocity, which gives rise to varying time scales. To cope with the possibility of extremely abrupt changes in the values of the solution over very short distances, adaptive mesh techniques can be applied to resolve the high activity regions by ordering grid points in appropriate places. To avoid a control volume formulation of the solution of partial differential equations, a simple orthogonal, adaptive-mesh technique is employed. This involves separate adaptation in the x and y directions. Through simple analysis and numerical examples, the adaptive mesh is shown to give significant increase in accuracy in the computations.

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