• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.211-220
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• 2014

In this paper, we present a review of optical and structural studies of $GaBi_xAs_{1-x}$ epilayers grown by Molecular Beam Epitaxy (MBE) on (311)B and (001) GaAs substrates with different As fluxes. The results indicate that under near-stoichiometric conditions the bismuth incorporation is higher for samples grown on (311)B GaAs substrates than for those grown on (001) GaAs. In addition, carrier localization effects in GaBiAs layers are clearly revealed for both samples by optical measurements. The (311)B samples showed evidence of higher density of defects. It has also been found that the nonradiative centers play a significant role in the recombination process in this material system. The influence of post-growth annealing on the microstructural, optical, and magneto-optical properties was also investigated. An important improvement of optical and spin properties after thermal annealing due to the reduction of defects in the GaBiAs layers was observed.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.240-247
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• 2014

Modelling and measurements of normal and lateral stiffness for atomic force microscopy (AFM) are presented in this work. Important issues, such as element discretisation, stiffness calibration, and deflection angle are explored using the finite element (FE) model. Elements with various dimension ratios are investigated and comparisons with several mathematical models are reported to verify the accuracy of the model. Investigation of the deflection angle of a cantilever is also shown. Moreover, AFM force measurement experiments with conical and colloid probe tips are demonstrated. The relationships between force and displacement, required for stiffness measurement, in normal and lateral directions are acquired for the conical tip and the limitations of the colloid probe tip are highlighted.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.145-150
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• 2014

MgO thin films were deposited by internal ICP-assisted reactive-magnetron sputtering with bipolar pulse bias on a substrate to suppress random arcs. Mg is reactively sputtered by a bipolar pulsed DC power of 100 kHz into ICP generated by a dielectrically shielded internal antenna. At a mass flow ratio of $Ar/O_2$ = 10 : 2 and an ICP/sputter power ratio of 1 : 1, optimal film properties were obtained (a powder-like crystal orientation distribution and a RMS surface roughness of approximately 0.42 nm). A bipolar pulse substrate bias at a proper frequency (~a few kHz) prevented random arc events. The crystalline preferred orientations varied between the (111), (200) and (220) orientations. By optimizing the plasma conditions, films having similar bulk crystallinity characteristics (JCPDS data) were successfully obtained.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.113-127
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• 2014

For more than five decades, silicon has dominated the semiconductor industry that supports memory devices, ICs, photovoltaic devices, etc. Photoluminescence (PL) is an attractive silicon characterization technique because it is contactless and provides information on bulk impurities, defects, surface states, optical properties, and doping concentration. It can provide high resolution spectra, generally with the sample at low temperature and room-temperature spectra. The photoluminescence properties of silicon at low temperature are reviewed and discussed in this study. In this paper, silicon bulk PL spectra are shown in multiple peak positions at low temperature. They correspond with various impurities such as In, Al, and Be, phonon interactions, for example, acoustical phonons and optical phonons, different exciton binding energies for boron and phosphorus, dislocation related PL emission peak lines, and oxygen related thermal donor PL emissions.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.103-112
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• 2014

The Korea Research Institute of Standards and Science (KRISS) has three major vacuum systems: an ultrasonic interferometer manometer (UIM; Section II, Figs. 1 and 2) for a low vacuum, a static expansion system (SES; Section III, Figs. 3 and 4) for a medium vacuum, and an orifice-type dynamic expansion system (DES, Section IV, Figs. 5 and 6) for high and ultra-high vacuum systems. For each system, explicit measurement model equations with multiple variables are given. According to ISO standards, all of these system variable errors were used to calculate the expanded uncertainty (U). For each system, the expanded uncertainties (k = 1, confidence level = 95%) and relative expanded uncertainty (expanded uncertainty/generated pressure) levels are summarized in Table 4. Within the uncertainty limits, our bilateral and key comparisons [CCM.P-K4 (10 Pa to 1 kPa)] are extensive and in good agreement with those of other nations (Fig. 8 and Table 5).

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.139-144
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• 2014

GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and $NH_3$, were injected from a shower head at the top of the chamber; the carrier gases, $H_2$ or $N_2$, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using $H_2$ as a carrier gas instead of $N_2$, the uniform deposition zone was increased by 20%.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• Applied Science and Convergence Technology
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• v.23 no.2
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• pp.97-102
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• 2014

A vacuum chamber for a commercial atomic force microscope (AFM) is designed and fabricated. Only minimal modifications were made to an existing microscope in an effort to work in a vacuum environment, while most of the available AFM functionalities were kept intact. The optical alignment needed for proper AFM operations including a SLD (superluminescent diode) and a photodiode can be made externally without breaking the vacuum. A vacuum level of $5{\times}10^{-3}$ torr was achieved with a mechanical pump. An enhancement of the quality factor was observed along with a shift in the resonance frequency of a non-contact-mode cantilever in a vacuum. Topographical data of a calibration sample were also obtained in air and in a low vacuum using the non-contact mode and the results were compared.

• Applied Science and Convergence Technology
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• v.23 no.2
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• pp.90-96
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• 2014

Flexible $ZrO_2$ films as dielectric materials for high-energy-density capacitors were deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $ZrO_2$ films were dependent on the sputtering pressure and gas ratio. Although $ZrO_2$ films were deposited at room temperature, all films showed a tetragonal crystalline structure regardless of the sputtering variables. The surface of the film became a surface with large white particles upon an increase in the $O_2/Ar$ gas ratio. The RMS roughness and crystallite size of the $ZrO_2$ films increased with an increase in the sputtering pressure. The electrical properties of the $ZrO_2$ films were affected by the microstructure and roughness. The $ZrO_2$ films exhibited a dielectric constant of 21~38 at 1 kHz and a leakage current density of $10^{-6}{\sim}10^{-5}A/cm^2$ at 300 kV/cm.

• Applied Science and Convergence Technology
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• v.23 no.2
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• pp.83-89
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• 2014

Adsorption of residual gas molecules damped the emission current of a W (310) field electron emission (FE) emitter. The damping speed was linearly proportional to the pressure gauge readings at pressure ranging from ${\sim}10^{-8}Pa$ to ${\sim}10^{-9}Pa$, and the proportionality constant was employed to measure pressure in the $10^{-10}Pa$ range. A time plot of FE current revealed the existence of an "initial stable region" after the flash heating of W(310) FE, during which the FE current damps very slowly. The presence of non-hydrogen gas removed this region from the plot, supplying a means of qualitatively analysing the gas species.